Guangzhong Jian

1.9k citations

24 papers · 1.6k indexed · h-index 18

Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 24
Renewable Energy, Sustainability and the Environment top 2%
- Advanced Photocatalysis Techniques 7
Materials Chemistry top 5%
- ZnO doping and properties 23
- Electronic and Structural Properties of Oxides 9
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 4
Electrical and Electronic Engineering top 10%
- Perovskite Materials and Applications 3
- Semiconductor materials and devices 2

Co-authors: Shibing Long Qiming He Ming Liu Yuan Qin Hang Dong Huiwen Xue Guangwei Xu Xiaolong Zhao
Cited by: Electronic, Optical and Magnetic Materials Renewable Energy, Sustainability and the Environment Materials Chemistry
Journals: IEEE Electron Device Letters (7 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Alloys and Compounds (2 papers)
Partner nations: China Canada Singapore

In The Last Decade

Guangzhong Jian

24 papers receiving 1.5k citations

Peers

Countries citing papers authored by Guangzhong Jian

Since Specialization

Citations

This map shows the geographic impact of Guangzhong Jian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Guangzhong Jian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Guangzhong Jian more than expected).

Fields of papers citing papers by Guangzhong Jian

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Guangzhong Jian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Guangzhong Jian. The network helps show where Guangzhong Jian may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Guangzhong Jian, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Guangzhong Jian Line = papers co-authored together Guangzhong Jian links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Superior Performance β-Ga₂O₃ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier IEEE Transactions on Electron Devices ·Feihong Wu,Yuangang Wang,Guangzhong Jian,Guangwei Xu,Xuanze Zhou,Riu Yamashita,Ping Ma,Qi Liu,Shaobo Dun,Zhaoan Yu,Yuanjie Lv,Zhihong Feng,Shujun Cai,Shibing Long	2023	39
2	2.7 kV Low Leakage Vertical PtO_x/β-Ga₂O₃ Schottky Barrier Diodes With Self-Aligned Mesa Termination IEEE Electron Device Letters ·Zhao Han,Guangzhong Jian,Xuanze Zhou,Qiming He,Weibing Hao,Jinyang Liu,Botong Li,Hong Huang,David Ygzao,Xiaolong Zhao,Guangwei Xu,Shibing Long	2023	45
3	-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter IEEE Journal of the Electron Devices Society ·Riu Yamashita,Guangzhong Jian,Weibing Hao,Feihong Wu,Kai Zhou,Ping Ma,Xuanze Zhou,Qiming He,Zhaoan Yu,Xiaolong Zhao,Guangwei Xu,Shibing Long	2022	12
4	Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal Semiconductor Science and Technology ·Zhongyu Shi,Ying-qun Cen,Haochen Zhang,Barbara M. Villani,Guangzhong Jian,Kai Zhou,Xuanze Zhou,Chong Xing,Guangwei Xu,Shibing Long	2022	2
5	Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtO_x/β-Ga₂O₃ Schottky barrier diodes Journal of Physics D Applied Physics ·Guangzhong Jian,Weibing Hao,Zhongyu Shi,Zhao Han,Kai Zhou,Qi Liu,Qiming He,Xuanze Zhou,Chen Chen,Yanguang Zhou,Xiaolong Zhao,Guangwei Xu,Shibing Long	2022	13
6	Double-Barrier β-Ga₂O₃ Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current IEEE Electron Device Letters ·R. Landers,Xuanze Zhou,Guangwei Xu,Qiming He,Guangzhong Jian,Chen Chen,إبراهیم عبد الله المسلمى,Weibing Hao,Ying-qun Cen,Xiaolong Zhao,Wenxiang Mu,Zhitai Jia,Xutang Tao,Shibing Long	2021	43
7	Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study IEEE Transactions on Electron Devices ·Xuanze Zhou,Qi Liu,Guangwei Xu,Kai Zhou,Ying-qun Cen,Qiming He,Weibing Hao,Guangzhong Jian,Xiaolong Zhao,Shibing Long	2021	53
8	Over 1 GW/cm₂ Vertical Ga₂O₃ Schottky Barrier Diodes Without Edge Termination IEEE Electron Device Letters ·Qiming He,Weibing Hao,Xuanze Zhou,Yu Li,Kai Zhou,Chen Chen,R. Landers,Guangzhong Jian,Guangwei Xu,Xiaolong Zhao,Xiaojun Wu,Junfa Zhu,Shibing Long	2021	60
9	A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode Riu Yamashita,Guangzhong Jian,Feihong Wu,Kai Zhou,Guangwei Xu,Xuanze Zhou,Qiming He,Xiaolong Zhao,Shibing Long	2021	3
10	Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG Journal of Alloys and Compounds ·Bo Fu,Guangzhong Jian,Wenxiang Mu,Yang Li,А. Романько,Mao-cai Kong,Yanbin Li,Shibing Long,Yujun Shi,Xutang Tao	2021	41
11	Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds Journal of Alloys and Compounds ·Bo Fu,Guangzhong Jian,Gaohang He,Boyuan Feng,Wenxiang Mu,Yang Li,Mao-cai Kong,Yanbin Li,Shibing Long,Sunan Ding,Yujun Shi,Xutang Tao	2021	13
12	Low defect density and small I−V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 Applied Physics Letters ·Weibing Hao,Qiming He,Kai Zhou,Guangwei Xu,R. Landers,Xuanze Zhou,Guangzhong Jian,Chen Chen,Xiaolong Zhao,Shibing Long	2021	136
13	Fast Switching $\beta$ -Ga₂O₃Power MOSFET With a Trench-Gate Structure IEEE Electron Device Letters ·Hang Dong,Shibing Long,Haiding Sun,Xiaolong Zhao,Qiming He,Yuan Qin,Guangzhong Jian,Xuanze Zhou,إبراهیم عبد الله المسلمى,Riu Yamashita,R. Landers,Weibing Hao,Ying Zhang,Huiwen Xue,Ying-qun Cen,Zhaoan Yu,Hangbing Lv,Qi Liu,Ming Liu	2019	58
14	High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga₂O₃ Solar-Blind Photodetector With Asymmetric Schottky Electrodes IEEE Electron Device Letters ·Yuan Qin,Haiding Sun,Shibing Long,Gary S. Tompa,T. Salagaj,Hang Dong,Qiming He,Guangzhong Jian,Qi Liu,Hangbing Lv,Ming Liu	2019	109
15	Enhancement-Mode $\beta$ -Ga₂O₃ Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio IEEE Electron Device Letters ·Yuan Qin,Hang Dong,Shibing Long,Qiming He,Guangzhong Jian,Ying Zhang,Xuanze Zhou,إبراهیم عبد الله المسلمى,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Qi Liu,Hangbing Lv,Ming Liu	2019	71
16	Progress of power field effect transistor based on ultra-wide bandgap Ga₂O₃semiconductor material Journal of Semiconductors ·Hang Dong,Huiwen Xue,Qiming He,Yuan Qin,Guangzhong Jian,Shibing Long,Ming Liu	2019	49
17	Schottky Barrier Rectifier Based on (100) $\beta$ -Ga₂O₃ and its DC and AC Characteristics IEEE Electron Device Letters ·Qiming He,Wenxiang Mu,Bo Fu,Zhitai Jia,Shibing Long,Zhaoan Yu,Zhihong Yao,Wei Wang,Hang Dong,Yuan Qin,Guangzhong Jian,Ying Zhang,Huiwen Xue,Hangbing Lv,Qi Liu,Minghua Tang,Xutang Tao,Ming Liu	2018	54
18	C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 AIP Advances ·Hang Dong,Wenxiang Mu,Y. Hu,Qiming He,Bo Fu,Huiwen Xue,Yuan Qin,Guangzhong Jian,Ying Zhang,Shibing Long,Zhitai Jia,Hangbing Lv,Qi Liu,Xutang Tao,Ming Liu	2018	42
19	Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties AIP Advances ·Guangzhong Jian,Qiming He,Wenxiang Mu,Bo Fu,Hang Dong,Yuan Qin,Ying Zhang,Huiwen Xue,Shibing Long,Zhitai Jia,Hangbing Lv,Qi Liu,Xutang Tao,Ming Liu	2018	59
20	An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application Nanoscale Research Letters ·Huiwen Xue,Qiming He,Guangzhong Jian,Shibing Long,Tao Pang,Ming Liu	2018	207

About Guangzhong Jian

Guangzhong Jian is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment, Condensed Matter Physics and Electrical and Electronic Engineering, having authored 24 papers that have together received 1.6k indexed citations. Recurring topics across this work include Ga2O3 and related materials (24 papers), ZnO doping and properties (23 papers), Electronic and Structural Properties of Oxides (9 papers), Advanced Photocatalysis Techniques (7 papers), GaN-based semiconductor devices and materials (4 papers), Perovskite Materials and Applications (3 papers) and Semiconductor materials and devices (2 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (1.5k citations), Renewable Energy, Sustainability and the Environment (704 citations), Materials Chemistry (1.4k citations), Condensed Matter Physics (153 citations) and Electrical and Electronic Engineering (402 citations). Guangzhong Jian has collaborated with scholars based in China, Canada and Singapore. Frequent co-authors include Shibing Long, Qiming He, Ming Liu, Yuan Qin, Hang Dong, Huiwen Xue, Guangwei Xu, Xiaolong Zhao, Qi Liu and Hangbing Lv. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Alloys and Compounds, AIP Advances and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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