Guangzhong Jian

1.9k total citations
24 papers, 1.6k citations indexed

About

Guangzhong Jian is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Guangzhong Jian has authored 24 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electronic, Optical and Magnetic Materials, 23 papers in Materials Chemistry and 7 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Guangzhong Jian's work include Ga2O3 and related materials (24 papers), ZnO doping and properties (23 papers) and Electronic and Structural Properties of Oxides (9 papers). Guangzhong Jian is often cited by papers focused on Ga2O3 and related materials (24 papers), ZnO doping and properties (23 papers) and Electronic and Structural Properties of Oxides (9 papers). Guangzhong Jian collaborates with scholars based in China, Canada and Singapore. Guangzhong Jian's co-authors include Shibing Long, Qiming He, Ming Liu, Yuan Qin, Hang Dong, Huiwen Xue, Guangwei Xu, Xiaolong Zhao, Qi Liu and Hangbing Lv and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and Journal of Alloys and Compounds.

In The Last Decade

Guangzhong Jian

24 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Guangzhong Jian China 18 1.5k 1.4k 704 402 153 24 1.6k
Pengju Tan China 13 1.1k 0.7× 1.1k 0.8× 571 0.8× 356 0.9× 118 0.8× 22 1.3k
Xuanze Zhou China 21 1.2k 0.8× 1.1k 0.8× 564 0.8× 329 0.8× 148 1.0× 61 1.3k
Zhengwei Chen China 17 1.4k 0.9× 1.5k 1.1× 652 0.9× 533 1.3× 228 1.5× 39 1.7k
Zuyong Yan China 26 1.7k 1.2× 1.6k 1.2× 808 1.1× 557 1.4× 165 1.1× 54 1.9k
Daniel Splith Germany 21 906 0.6× 1.1k 0.8× 393 0.6× 369 0.9× 81 0.5× 46 1.2k
Sooyeoun Oh South Korea 14 1.3k 0.9× 1.3k 0.9× 638 0.9× 356 0.9× 98 0.6× 21 1.5k
Zhaoqing Feng China 21 1.1k 0.7× 1.0k 0.7× 513 0.7× 280 0.7× 177 1.2× 36 1.2k
Shin Mou United States 19 1.4k 1.0× 1.6k 1.2× 804 1.1× 456 1.1× 149 1.0× 53 1.8k
Bhera Ram Tak India 14 604 0.4× 623 0.4× 278 0.4× 288 0.7× 97 0.6× 21 771
Shinji Nakagomi Japan 20 1.8k 1.2× 1.9k 1.4× 987 1.4× 695 1.7× 178 1.2× 62 2.2k

Countries citing papers authored by Guangzhong Jian

Since Specialization
Citations

This map shows the geographic impact of Guangzhong Jian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Guangzhong Jian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Guangzhong Jian more than expected).

Fields of papers citing papers by Guangzhong Jian

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Guangzhong Jian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Guangzhong Jian. The network helps show where Guangzhong Jian may publish in the future.

Co-authorship network of co-authors of Guangzhong Jian

This figure shows the co-authorship network connecting the top 25 collaborators of Guangzhong Jian. A scholar is included among the top collaborators of Guangzhong Jian based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Guangzhong Jian. Guangzhong Jian is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wu, Feihong, Yuangang Wang, Guangzhong Jian, et al.. (2023). Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier. IEEE Transactions on Electron Devices. 70(3). 1199–1205. 39 indexed citations
2.
Han, Zhao, Guangzhong Jian, Xuanze Zhou, et al.. (2023). 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination. IEEE Electron Device Letters. 44(10). 1680–1683. 45 indexed citations
3.
Jian, Guangzhong, Weibing Hao, Feihong Wu, et al.. (2022). -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter . IEEE Journal of the Electron Devices Society. 10. 933–941. 12 indexed citations
4.
Shi, Zhongyu, Haochen Zhang, Guangzhong Jian, et al.. (2022). Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal. Semiconductor Science and Technology. 37(6). 65010–65010. 2 indexed citations
5.
Jian, Guangzhong, Weibing Hao, Zhongyu Shi, et al.. (2022). Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes. Journal of Physics D Applied Physics. 55(30). 304003–304003. 13 indexed citations
6.
He, Qiming, Weibing Hao, Xuanze Zhou, et al.. (2021). Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination. IEEE Electron Device Letters. 43(2). 264–267. 60 indexed citations
7.
Zhou, Xuanze, Qi Liu, Guangwei Xu, et al.. (2021). Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study. IEEE Transactions on Electron Devices. 68(4). 1501–1506. 53 indexed citations
8.
Zhou, Xuanze, Guangwei Xu, Qiming He, et al.. (2021). Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current. IEEE Electron Device Letters. 42(3). 430–433. 43 indexed citations
9.
Jian, Guangzhong, Feihong Wu, Kai Zhou, et al.. (2021). A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode. 1–3. 3 indexed citations
10.
Fu, Bo, Guangzhong Jian, Wenxiang Mu, et al.. (2021). Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG. Journal of Alloys and Compounds. 896. 162830–162830. 41 indexed citations
11.
Fu, Bo, Guangzhong Jian, Gaohang He, et al.. (2021). Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds. Journal of Alloys and Compounds. 889. 161714–161714. 13 indexed citations
12.
Qin, Yuan, Liheng Li, Xiaolong Zhao, et al.. (2020). Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism. ACS Photonics. 7(3). 812–820. 217 indexed citations
13.
Dong, Hang, Shibing Long, Haiding Sun, et al.. (2019). Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure. IEEE Electron Device Letters. 40(9). 1385–1388. 58 indexed citations
14.
Qin, Yuan, Haiding Sun, Shibing Long, et al.. (2019). High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes. IEEE Electron Device Letters. 40(9). 1475–1478. 109 indexed citations
15.
Qin, Yuan, Hang Dong, Shibing Long, et al.. (2019). Enhancement-Mode $\beta$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio. IEEE Electron Device Letters. 40(5). 742–745. 71 indexed citations
16.
Dong, Hang, Huiwen Xue, Qiming He, et al.. (2019). Progress of power field effect transistor based on ultra-wide bandgap Ga2O3semiconductor material. Journal of Semiconductors. 40(1). 11802–11802. 49 indexed citations
17.
Jian, Guangzhong, Qiming He, Wenxiang Mu, et al.. (2018). Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties. AIP Advances. 8(1). 59 indexed citations
18.
Dong, Hang, Wenxiang Mu, Y. Hu, et al.. (2018). C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3. AIP Advances. 8(6). 42 indexed citations
19.
He, Qiming, Wenxiang Mu, Bo Fu, et al.. (2018). Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics. IEEE Electron Device Letters. 39(4). 556–559. 54 indexed citations
20.
Xue, Huiwen, Qiming He, Guangzhong Jian, et al.. (2018). An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application. Nanoscale Research Letters. 13(1). 290–290. 207 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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