Shaobo Dun

757 total citations
64 papers, 619 citations indexed

About

Shaobo Dun is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Shaobo Dun has authored 64 papers receiving a total of 619 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 37 papers in Condensed Matter Physics and 34 papers in Materials Chemistry. Recurrent topics in Shaobo Dun's work include GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (23 papers) and ZnO doping and properties (20 papers). Shaobo Dun is often cited by papers focused on GaN-based semiconductor devices and materials (37 papers), Semiconductor materials and devices (23 papers) and ZnO doping and properties (20 papers). Shaobo Dun collaborates with scholars based in China, Israel and United States. Shaobo Dun's co-authors include Zhihong Feng, Shujun Cai, Yuanjie Lv, Yuangang Wang, Xingye Zhou, Hongyu Liu, Shixiong Liang, Tingting Han, Xubo Song and Guodong Gu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

In The Last Decade

Shaobo Dun

63 papers receiving 581 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shaobo Dun China	11	415	411	250	219	196	64	619
Rohit Khanna United States	13	232 0.6×	304 0.7×	221 0.9×	170 0.8×	90 0.5×	30	464
Kevin Udwary United States	12	275 0.7×	260 0.6×	154 0.6×	259 1.2×	85 0.4×	23	442
Yaming Fan China	14	425 1.0×	282 0.7×	404 1.6×	468 2.1×	85 0.4×	35	709
Yuanjie Lv China	13	318 0.8×	235 0.6×	261 1.0×	393 1.8×	58 0.3×	56	537
Haifan You China	10	440 1.1×	298 0.7×	205 0.8×	308 1.4×	59 0.3×	33	603
Yasuhiro Shirahata Japan	14	371 0.9×	359 0.9×	236 0.9×	69 0.3×	34 0.2×	40	639
Xun Zheng United States	16	468 1.1×	323 0.8×	563 2.3×	747 3.4×	91 0.5×	29	946
Mau-Phon Houng Taiwan	15	106 0.3×	267 0.6×	413 1.7×	88 0.4×	40 0.2×	49	520
Martin Hetzl Germany	13	168 0.4×	254 0.6×	135 0.5×	238 1.1×	30 0.2×	23	379
E. Malguth Germany	7	167 0.4×	309 0.8×	165 0.7×	160 0.7×	15 0.1×	22	389

Countries citing papers authored by Shaobo Dun

Since Specialization

Citations

This map shows the geographic impact of Shaobo Dun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shaobo Dun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shaobo Dun more than expected).

Fields of papers citing papers by Shaobo Dun

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shaobo Dun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shaobo Dun. The network helps show where Shaobo Dun may publish in the future.

Co-authorship network of co-authors of Shaobo Dun

This figure shows the co-authorship network connecting the top 25 collaborators of Shaobo Dun. A scholar is included among the top collaborators of Shaobo Dun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shaobo Dun. Shaobo Dun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Hongyu, Haozhong Wu, Yuangang Wang, et al.. (2025). Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV. Micro and Nanostructures. 206. 208255–208255.

Liu, Hongyu, Xiaoli Lu, Yuangang Wang, et al.. (2025). Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology. The European Physical Journal Special Topics. 234(2). 283–290. 2 indexed citations

Feng, Zhihong, Yuangang Wang, Hongyu Guo, et al.. (2025). 1200-V/10-A Low Thermal Resistance Ga₂O₃ Schottky Barrier Diode With Composite Terminal Structure and Substrate Thinning. IEEE Transactions on Electron Devices. 72(7). 3738–3743. 1 indexed citations

Wang, Yuangang, Wei Wang, Yuanjie Lv, et al.. (2024). 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate. Journal of Semiconductors. 45(1). 12501–12501. 4 indexed citations

Wu, Feihong, Yuangang Wang, Guangzhong Jian, et al.. (2023). Superior Performance β-Ga₂O₃ Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier. IEEE Transactions on Electron Devices. 70(3). 1199–1205. 39 indexed citations

Wang, Yuangang, Yuanjie Lv, Hongyu Liu, et al.. (2023). High-performance Ga₂O₃ Schottky Barrier Diode with a Self-aligned Shallow Groove and Dual Field-plate. 1 indexed citations

Han, Tingting, Yuangang Wang, Yuanjie Lv, et al.. (2023). 2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm². Journal of Semiconductors. 44(7). 72802–72802. 6 indexed citations

Luo, Xiaorong, Yuangang Wang, Kai Zhao, et al.. (2023). 600 V/7 A Large-Size RESURF β-Ga₂O₃ Schottky Barrier Diode With High-Temperature Storage Test. IEEE Transactions on Electron Devices. 71(2). 1320–1324. 6 indexed citations

Gong, Hehe, Yuanjie Lv, Shaobo Dun, et al.. (2021). 2.41 kV Vertical P-Nio/n-Ga ₂ O ₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm ². IEEE Transactions on Power Electronics. 37(4). 3743–3746. 125 indexed citations

10.

Lv, Yuanjie, Yuangang Wang, Shaobo Dun, et al.. (2020). Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities. IEEE Transactions on Power Electronics. 36(6). 6179–6182. 136 indexed citations

11.

Yan, Hui, et al.. (2014). Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model. Journal of Applied Physics. 115(16). 12 indexed citations

12.

Tan, Xin, Yuanjie Lv, Shaobo Dun, Guodong Gu, & Zhihong Feng. (2014). Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs. 21. 1–3. 2 indexed citations

13.

Lv, Yuanjie, et al.. (2014). Influence of AlGaN barrier layer on the RF electric characteristics for W-Band AlGaN/GaN HEMTs. 30. 1–2. 1 indexed citations

14.

Yu, Cui, Jia Li, Kuang‐Hong Gao, et al.. (2013). Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001). Solid State Communications. 175-176. 119–122. 5 indexed citations

15.

Feng, Zhihong, Jingjing Wang, Zezhao He, et al.. (2013). Polycrystalline diamond MESFETs by Au-mask technology for RF applications. Science China Technological Sciences. 56(4). 957–962. 9 indexed citations

16.

Lv, Yuanjie, Zhihong Feng, Tingting Han, et al.. (2013). Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors. Applied Physics Letters. 103(11). 113502–113502. 11 indexed citations

17.

Liu, Bo, et al.. (2011). A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate. Journal of Semiconductors. 32(12). 124003–124003. 7 indexed citations

18.

Jin, Zhi, Xinyu Liu, Tianchun Ye, et al.. (2011). Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates. Chinese Physics Letters. 28(12). 127202–127202. 3 indexed citations

19.

Dun, Shaobo, et al.. (2008). Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation. Materials Letters. 62(21-22). 3617–3619. 3 indexed citations

20.

Levy, Shai, et al.. (2008). Electronic devices based upon Germanium nano-crystals withdurability to strong neutron irradiation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7095. 709502–709502. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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