Xin Tan

581 total citations
43 papers, 472 citations indexed

About

Xin Tan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Xin Tan has authored 43 papers receiving a total of 472 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Xin Tan's work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (19 papers) and Semiconductor materials and devices (14 papers). Xin Tan is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (19 papers) and Semiconductor materials and devices (14 papers). Xin Tan collaborates with scholars based in China and Malaysia. Xin Tan's co-authors include Zhihong Feng, Xingye Zhou, Yuangang Wang, Yuanjie Lv, Shujun Cai, Xubo Song, Shixiong Liang, Tingting Han, Guodong Gu and Shibing Long and has published in prestigious journals such as Optics Express, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Xin Tan

41 papers receiving 446 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Xin Tan China	11	276	272	172	136	92	43	472
Yangfeng Li China	15	213 0.8×	305 1.1×	165 1.0×	324 2.4×	7 0.1×	52	637
X. J. Tan China	12	98 0.4×	793 2.9×	291 1.7×	35 0.3×	9 0.1×	26	888
Jia Song China	11	125 0.5×	238 0.9×	217 1.3×	31 0.2×	42 0.5×	27	466
Christian Kranert Germany	16	393 1.4×	585 2.2×	308 1.8×	56 0.4×	128 1.4×	40	732
Linwei Zhou China	10	63 0.2×	341 1.3×	175 1.0×	16 0.1×	11 0.1×	18	429
Guolin Zhao China	9	182 0.7×	134 0.5×	60 0.3×	26 0.2×	10 0.1×	30	445
Yu. N. Émirov United States	10	107 0.4×	252 0.9×	137 0.8×	27 0.2×	59 0.6×	23	435
Florentina Maxim Romania	10	130 0.5×	299 1.1×	112 0.7×	21 0.2×	51 0.6×	29	503
Krishna Chaitanya Pitike United States	13	156 0.6×	413 1.5×	125 0.7×	29 0.2×	27 0.3×	22	549
Hongyuan Zhao China	13	102 0.4×	354 1.3×	180 1.0×	21 0.2×	32 0.3×	34	602

Countries citing papers authored by Xin Tan

Since Specialization

Citations

This map shows the geographic impact of Xin Tan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xin Tan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xin Tan more than expected).

Fields of papers citing papers by Xin Tan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xin Tan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xin Tan. The network helps show where Xin Tan may publish in the future.

Co-authorship network of co-authors of Xin Tan

This figure shows the co-authorship network connecting the top 25 collaborators of Xin Tan. A scholar is included among the top collaborators of Xin Tan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xin Tan. Xin Tan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yu, Chenghao, Hui Yang, Wen‐Sheng Zhao, et al.. (2024). Research of Single-Event Burnout in P-NiO/n-Ga ₂ O ₃ Heterojunction Diode. IEEE Transactions on Device and Materials Reliability. 24(4). 480–486. 1 indexed citations

Yu, Chenghao, et al.. (2023). Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs. Microelectronics Reliability. 149. 115227–115227. 7 indexed citations

Zhou, Xingye, Xin Tan, Yuanjie Lv, et al.. (2020). High‐uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode. Electronics Letters. 56(17). 895–897. 3 indexed citations

Zhou, Xingye, Xin Tan, Yuanjie Lv, et al.. (2020). Impact of Resistance on the Performance of Ultraviolet 4H-SiC Avalanche Photodiodes. IEEE Transactions on Electron Devices. 67(8). 3250–3255. 8 indexed citations

Zhou, Xingye, Zhihong Feng, Shujun Cai, et al.. (2019). $8\times8$ 4H-SiC Ultraviolet Avalanche Photodiode Arrays With High Uniformity. IEEE Electron Device Letters. 40(10). 1591–1594. 17 indexed citations

Song, Xubo, Yuanjie Lv, Yamin Zhang, et al.. (2019). GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect. 1–3. 2 indexed citations

Lv, Yuanjie, Xubo Song, Zezhao He, et al.. (2018). Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs. Superlattices and Microstructures. 117. 132–136. 26 indexed citations

Tan, Xin, Yuanjie Lv, Yuangang Wang, et al.. (2018). Direct-readout pressure sensor based on AlGaN/GaN heterostructure. Microsystem Technologies. 26(10). 3189–3192. 2 indexed citations

Wang, Yuangang, Yuanjie Lv, Xingye Zhou, et al.. (2018). Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET. Superlattices and Microstructures. 120. 454–458. 1 indexed citations

10.

Zhou, Xingye, Xin Tan, Yuanjie Lv, et al.. (2018). Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al₂O₃Dielectric. IEEE Transactions on Electron Devices. 65(3). 928–935. 17 indexed citations

11.

Zhou, Xingye, et al.. (2018). Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica. 67(17). 178501–178501. 2 indexed citations

12.

Wang, Yuangang, Yuanjie Lv, Xingye Zhou, et al.. (2017). Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h. IEEE Electron Device Letters. 38(5). 604–606. 6 indexed citations

13.

Tan, Xin, Xingye Zhou, Hongyu Guo, et al.. (2016). Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al ₂ O ₃ Gate Dielectric. Chinese Physics Letters. 33(9). 98501–98501. 9 indexed citations

14.

Tan, Xin, Yuanjie Lv, Shaobo Dun, Guodong Gu, & Zhihong Feng. (2014). Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs. 21. 1–3. 2 indexed citations

15.

Tan, Xin, et al.. (2014). 90-nm-gated AlGaN/GaN HEMT with f<inf>T</inf>&f<inf>max</inf> of 132GHz&205GHz. 1. 1–2. 1 indexed citations

16.

Lv, Yuanjie, et al.. (2014). Influence of AlGaN barrier layer on the RF electric characteristics for W-Band AlGaN/GaN HEMTs. 30. 1–2. 1 indexed citations

17.

Lv, Yuanjie, Zhihong Feng, Xin Tan, Xubo Song, & Guodong Gu. (2014). Influence of substrate on the RF-related electric characteristics for W-band AlGaN/GaN HEMTs. 19. 1–4. 1 indexed citations

18.

Tan, Xin, Xiaogang Zhang, & Jiawei Chen. (2012). The Model of Nano-Scale Particle Removal in CO₂-Based Micelle Cleaning Solutions. Integrated ferroelectrics. 138(1). 50–57. 1 indexed citations

19.

Zhang, Xiaogang, et al.. (2009). Microscopic model of nano-scale particles removal in high pressure CO2-based solvents. The Journal of Supercritical Fluids. 49(2). 182–188. 9 indexed citations

20.

Tan, Xin, et al.. (2005). Surface Activation and Graft of the Ultrafine PTFE Particles. Acta Physico-Chimica Sinica. 21(7). 703–706. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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