Zhen Shen

618 total citations
37 papers, 514 citations indexed

About

Zhen Shen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zhen Shen has authored 37 papers receiving a total of 514 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zhen Shen's work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (13 papers) and Semiconductor materials and devices (13 papers). Zhen Shen is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (13 papers) and Semiconductor materials and devices (13 papers). Zhen Shen collaborates with scholars based in China, Macao and Japan. Zhen Shen's co-authors include Xuan Jiang, Yiqiang Ni, Zhisheng Wu, Yao Yao, Baijun Zhang, Zhiyuan He, Fan Yang, Yang Liu, Jian Zhong and Nan Sun and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and ACS Catalysis.

In The Last Decade

Zhen Shen

35 papers receiving 494 citations

Peers

Zhen Shen
Sunghan Choi South Korea
Xiabing Lou United States
Ritabrata Sarkar India
C. Madhu India
Xiaoqiang Sun China
Breogán Pato‐Doldán Spain
Zamin Mamiyev Germany
A. Wohlfart Germany
Yasuhiro Shimamoto Japan
Moureen C. Kemei United States
Sunghan Choi South Korea
Zhen Shen
Citations per year, relative to Zhen Shen Zhen Shen (= 1×) peers Sunghan Choi

Countries citing papers authored by Zhen Shen

Since Specialization
Citations

This map shows the geographic impact of Zhen Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhen Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhen Shen more than expected).

Fields of papers citing papers by Zhen Shen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhen Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhen Shen. The network helps show where Zhen Shen may publish in the future.

Co-authorship network of co-authors of Zhen Shen

This figure shows the co-authorship network connecting the top 25 collaborators of Zhen Shen. A scholar is included among the top collaborators of Zhen Shen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhen Shen. Zhen Shen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shen, Zhen, et al.. (2025). A vibration compensation approach for shipborne atomic gravimeter based on particle swarm optimization. Scientific Reports. 15(1). 8864–8864.
2.
Liu, Zixu, Sijia Yang, Zhen Shen, et al.. (2024). Covalent Grafting of Quaternary Ammonium Salt-Containing Polyurethane onto Silicone Substrates to Enhance Bacterial Contact-Killing Ability. Polymers. 17(1). 17–17. 4 indexed citations
3.
Dai, Yuming, Zhendong Hao, Yuhan Zeng, et al.. (2024). Boosting supercapacitive performance of SnS2 via trace Pb doping. FlatChem. 48. 100756–100756. 3 indexed citations
4.
5.
6.
Wang, Xueyu, Songdong Ding, Zhipeng Wang, et al.. (2021). A H-Bonding and Electrostatic Interaction Combined Strategy for TcO4– Separation by a Nitrotriacetate-Derived Amine–Amide Extractant. Inorganic Chemistry. 60(15). 10899–10908. 18 indexed citations
7.
He, Liang, Fan Yang, Liuan Li, et al.. (2017). High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth. IEEE Transactions on Electron Devices. 64(4). 1554–1560. 28 indexed citations
8.
Yang, Fan, Liang He, Yue Zheng, et al.. (2016). Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure. Journal of Materials Science Materials in Electronics. 27(9). 9061–9066. 2 indexed citations
9.
Shen, Zhen, Yao Yao, Fan Yang, et al.. (2016). Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors. physica status solidi (a). 213(10). 2693–2698. 11 indexed citations
10.
Chen, Mingming, Dingyu Yong, Chunxia Wu, et al.. (2015). Stabilization of BeZnO alloy by S incorporation: A density functional theory investigation. Journal of Alloys and Compounds. 658. 636–641. 9 indexed citations
11.
Ni, Yiqiang, Zijun Chen, Yue Zheng, et al.. (2015). Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. Semiconductor Science and Technology. 30(10). 105037–105037. 15 indexed citations
12.
Zhong, Jian, Yao Yao, Yue Zheng, et al.. (2015). Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode. Chinese Physics B. 24(9). 97303–97303. 5 indexed citations
13.
Ni, Yiqiang, Zhiyuan He, Yao Yao, et al.. (2015). The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si (1 1 1) template. Superlattices and Microstructures. 83. 811–818. 6 indexed citations
14.
Wang, Xiaodong, Jie Ma, Dandan Song, et al.. (2014). Characterization and Electrocatalytic Activity of Poly(4-thienylacetyl-oxy-2,2,6,6-tetramethylpiperidin-1-yloxy) Prepared by Electrochemical Polymerization. ECS Electrochemistry Letters. 3(6). H12–H15. 16 indexed citations
15.
Ni, Yiqiang, Zhiyuan He, Fan Yang, et al.. (2014). Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system. Japanese Journal of Applied Physics. 54(1). 15505–15505. 32 indexed citations
16.
Yao, Yao, Zhiyuan He, Fan Yang, et al.. (2013). Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique. Applied Physics Express. 7(1). 16502–16502. 32 indexed citations
17.
He, Zhiyuan, Yiqiang Ni, Fan Yang, et al.. (2013). Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers. Journal of Physics D Applied Physics. 47(4). 45103–45103. 14 indexed citations
18.
He, Zhiyuan, Jialin Li, Yuhua Wen, et al.. (2012). Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics. 51(5R). 54103–54103. 9 indexed citations
19.
Wen, Yuhua, Zhiyuan He, Jialin Li, et al.. (2011). Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique. Applied Physics Letters. 98(7). 31 indexed citations
20.
Shen, Zhen, et al.. (2003). A Practical Synthesis of trans‐Resveratrol.. ChemInform. 34(9). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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