C.R. Viswanathan

2.0k total citations
118 papers, 1.5k citations indexed

About

C.R. Viswanathan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C.R. Viswanathan has authored 118 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 107 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in C.R. Viswanathan's work include Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). C.R. Viswanathan is often cited by papers focused on Semiconductor materials and devices (95 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers) and Integrated Circuits and Semiconductor Failure Analysis (34 papers). C.R. Viswanathan collaborates with scholars based in United States, India and Russia. C.R. Viswanathan's co-authors include A.A. Abidi, Tomasz Brożek, Timothy J. Tredwell, L. O. Bubulac, V. Ramgopal Rao, R. Li, Alexander A. Balandin, John Langan, Shiwei Cai and J. Maserjian and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C.R. Viswanathan

109 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.R. Viswanathan United States 21 1.2k 406 226 181 129 118 1.5k
Linus A. Fetter United States 14 824 0.7× 630 1.6× 133 0.6× 187 1.0× 118 0.9× 46 1.2k
S. Makram–Ebeid France 13 696 0.6× 451 1.1× 167 0.7× 88 0.5× 47 0.4× 30 860
G. E. Stillman United States 26 1.7k 1.4× 1.5k 3.8× 237 1.0× 201 1.1× 183 1.4× 79 2.1k
J. M. Ballantyne United States 21 1.1k 0.9× 970 2.4× 274 1.2× 88 0.5× 243 1.9× 88 1.5k
E.C. Larkins United Kingdom 18 1.2k 1.0× 1.1k 2.6× 130 0.6× 243 1.3× 141 1.1× 149 1.4k
A. A. Grinberg United States 13 619 0.5× 636 1.6× 187 0.8× 107 0.6× 79 0.6× 46 937
J. Caro Netherlands 17 816 0.7× 943 2.3× 201 0.9× 122 0.7× 225 1.7× 69 1.3k
J. M. Ballingall United States 23 1.6k 1.3× 1.2k 3.0× 289 1.3× 225 1.2× 119 0.9× 85 1.8k
A. R. Beattie United Kingdom 12 972 0.8× 825 2.0× 252 1.1× 66 0.4× 75 0.6× 28 1.2k
P. Ballet France 20 821 0.7× 625 1.5× 344 1.5× 95 0.5× 118 0.9× 82 1.0k

Countries citing papers authored by C.R. Viswanathan

Since Specialization
Citations

This map shows the geographic impact of C.R. Viswanathan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.R. Viswanathan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.R. Viswanathan more than expected).

Fields of papers citing papers by C.R. Viswanathan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.R. Viswanathan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.R. Viswanathan. The network helps show where C.R. Viswanathan may publish in the future.

Co-authorship network of co-authors of C.R. Viswanathan

This figure shows the co-authorship network connecting the top 25 collaborators of C.R. Viswanathan. A scholar is included among the top collaborators of C.R. Viswanathan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.R. Viswanathan. C.R. Viswanathan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (2005). Threshold voltage degradation in plasma damaged cmos transistors - role of electron and hole traps related to charging damage. 1627–1630. 2 indexed citations
3.
Viswanathan, C.R., et al.. (2004). ON THE ELECTRICAL CHARACTERISTICS OF VACUUM EVAPORATED INDIUM SELENIDE THIN FILMS. 3 indexed citations
4.
Grupen, Matt & C.R. Viswanathan. (2003). A numerical simulation of the transient drain current in a MOST at cryogenic temperatures. 63–67. 1 indexed citations
5.
Viswanathan, C.R.. (1999). Plasma-induced damage. Microelectronic Engineering. 49(1-2). 65–81. 14 indexed citations
6.
Brożek, Tomasz, et al.. (1997). Polarity dependence of cumulative properties of charge-to-breakdown in very thin gate oxides. Solid-State Electronics. 41(7). 995–999. 5 indexed citations
7.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1996). Enhanced Hole Trapping in MOS Devices Damaged by Plasma-Induced Charging. European Solid-State Device Research Conference. 365–368. 1 indexed citations
8.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1995). Plasma Etching Induced Gate Oxide Leakage. European Solid-State Device Research Conference. 255–258. 1 indexed citations
9.
Brożek, Tomasz & C.R. Viswanathan. (1994). Homogenous Hot Hole Injection by Tunnelling in Gate Oxides of CMOS Devices. European Solid-State Device Research Conference. 515–518. 1 indexed citations
10.
Li, Xiaoyu, et al.. (1994). Reliability Study of Plasma Etching Damage in ULSI Process. MRS Proceedings. 338. 2 indexed citations
11.
Viswanathan, C.R., et al.. (1993). Charge Pumping At Cryogenic Temperatures. European Solid-State Device Research Conference. 527–530. 1 indexed citations
12.
Wang, Jia, et al.. (1991). Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs. IEEE Electron Device Letters. 12(6). 300–302. 10 indexed citations
13.
Chang, Jane P., et al.. (1991). Low frequency noise in quantum-well GexSi1−x PMOSFET's. Microelectronic Engineering. 15(1-4). 19–22. 4 indexed citations
14.
Chang, Jane P., et al.. (1990). Electrical properties of GaAs/InGaAs high electron mobility transistors. International Journal of Electronics. 69(5). 621–629. 1 indexed citations
15.
Abidi, A.A., et al.. (1987). Fllcker Noise in CMOS: A Unified Model for VLSI Processes. Symposium on VLSI Technology. 85–86. 3 indexed citations
16.
Viswanathan, C.R., et al.. (1981). Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques. IEE Proceedings I Solid State and Electron Devices. 128(2). 44–44. 2 indexed citations
17.
Langan, John, et al.. (1978). Characterization of improved InSb interfaces. 594–597. 4 indexed citations
18.
Viswanathan, C.R. & Roger Loo. (1972). Internal photoemission in sapphire substrates. Applied Physics Letters. 21(8). 370–372. 8 indexed citations
19.
Viswanathan, C.R. & S. Ogura. (1968). EFFECT OF HEATING UNDER BIAS ON PHOTOELECTRIC THRESHOLD IN MOS STRUCTURE. Applied Physics Letters. 12(6). 220–222. 8 indexed citations
20.
Viswanathan, C.R., et al.. (1961). Deleading of gasoline. Defence Science Journal. 11(1). 34–44. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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