P.M. Garone

617 citations

18 papers · 439 indexed · h-index 9

Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design 9
- Semiconductor materials and devices 9
- Silicon and Solar Cell Technologies 5
- Thin-Film Transistor Technologies 4
- Photonic and Optical Devices 3
- Advanced MEMS and NEMS Technologies 2
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 4
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 3
Biomedical Engineering
Computational Mechanics

Co-authors: James C. Sturm Peter Schwartz V. Venkataraman E.J. Prinz B. J. Wilkens S. A. Schwarz X. Xiao J. C. Sturm
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: IEEE Electron Device Letters (3 papers)Applied Physics Letters (3 papers)Journal of Electronic Materials (1 paper)
Partner nations: United States

In The Last Decade

P.M. Garone

14 papers receiving 419 citations

Peers

Countries citing papers authored by P.M. Garone

Since Specialization

Citations

This map shows the geographic impact of P.M. Garone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.M. Garone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.M. Garone more than expected).

Fields of papers citing papers by P.M. Garone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.M. Garone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.M. Garone. The network helps show where P.M. Garone may publish in the future.

Co-authorship network

The 19 scholars most cited alongside P.M. Garone, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.M. Garone Line = papers co-authored together P.M. Garone links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	A modular process for integrating thick polysilicon MEMS devices with sub-micron CMOS Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J. Yasaitis,Michael W. Judy,Tim Brosnihan,P.M. Garone,Avijit Chaubey,長谷川和子,Scott J. Limb,Roger T. Howe,Bernhard E. Boser,Moorthi Palaniapan,Chiara Esposito,Sunil A. Bhave	2003	27
2	The effect of base-emitter spacers and strain dependent densities of states in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors E.J. Prinz,P.M. Garone,Peter Schwartz,X. Xiao,James C. Sturm	2003	3
3	Developing a manufacturable process for the deposition of thick polysilicon films for micromachined devices Gwardys S.Z.E.Z.,W. Sankomkai,P.M. Garone,Fariba Hoseinpour,Brittany Anne Shields	2002	6
4	A double-polysilicon self-aligned npn bipolar process (ADRF) with optional NMOS transistors for RF and microwave applications K. O,P.M. Garone,Daison Gomez-Pinto,光伸藤田,F. Rodis,Dong‐Du Mai,ΜADAN L. PURI,Jakob Nanko-Drees	2002	4
5	Carrier confinement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures P.M. Garone,V. Venkataraman,James C. Sturm	2002	0
6	Mobility enhancement and quantum mechanical modeling in Ge/sub x/Si/sub 1-x/ channel MOSFETs from 90 to 300 K P.M. Garone,V. Venkataraman,Yulun Song	2002	0
7	A low cost and low power silicon npn bipolar process with NMOS transistors and its wireless applications K. O,T. Tewksbury,Fernanda D'Angelo,Daison Gomez-Pinto,P.M. Garone,光伸藤田,ΜADAN L. PURI,J. Yasaitis	2002	1
8	A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications IEEE Transactions on Electron Devices ·K. O,P.M. Garone,Daison Gomez-Pinto,Fernanda D'Angelo,光伸藤田,T. Tewksbury,ΜADAN L. PURI,J. Yasaitis	1995	19
9	Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers IEEE Electron Device Letters ·P.M. Garone,V. Venkataraman,James C. Sturm	1992	78
10	The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors IEEE Electron Device Letters ·E.J. Prinz,P.M. Garone,Peter Schwartz,X. Xiao,James C. Sturm	1991	83
11	Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures IEEE Electron Device Letters ·P.M. Garone,V. Venkataraman,Tatiana Lisyuk	1991	59
12	Temperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission Journal of Applied Physics ·J. C. Sturm,P.M. Garone,Peter Schwartz	1991	14
13	Silicon temperature measurement by infrared transmission for rapid thermal processing applications Applied Physics Letters ·James C. Sturm,Peter Schwartz,P.M. Garone	1990	30
14	Silicon vapor phase epitaxial growth catalysis by the presence of germane Applied Physics Letters ·P.M. Garone,James C. Sturm,Peter Schwartz,S. A. Schwarz,B. J. Wilkens	1990	95
15	In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon Journal of Electronic Materials ·James C. Sturm,Peter Schwartz,P.M. Garone	1990	3
16	Band-gap shifts in silicon-germanium heterojunction bipolar transistors Applied Physics Letters ·James C. Sturm,E.J. Prinz,P.M. Garone,Peter Schwartz	1989	16
17	TemperatÜRe Measurement by Infrared Transmission for Rapid Thermal Processing Applications MRS Proceedings ·James C. Sturm,Peter Schwartz,P.M. Garone	1989	0
18	Growth and Doping Kinetics of GexSi_l-x Structures by Limited Reaction Processing MRS Proceedings ·P.M. Garone,James C. Sturm,Peter Schwartz,S. A. Schwarz,B. J. Wilkens	1989	1

About P.M. Garone

P.M. Garone is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Mechanics of Materials, having authored 18 papers that have together received 439 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor materials and devices (9 papers), Silicon and Solar Cell Technologies (5 papers), Semiconductor materials and interfaces (4 papers), Thin-Film Transistor Technologies (4 papers), Photonic and Optical Devices (3 papers), Silicon Nanostructures and Photoluminescence (3 papers) and Advanced MEMS and NEMS Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (410 citations), Atomic and Molecular Physics, and Optics (187 citations), Materials Chemistry (93 citations), Biomedical Engineering (75 citations) and Computational Mechanics (19 citations). P.M. Garone has collaborated with scholars based in United States. Frequent co-authors include James C. Sturm, Peter Schwartz, V. Venkataraman, E.J. Prinz, B. J. Wilkens, S. A. Schwarz, X. Xiao, J. C. Sturm, J. Yasaitis and T. Tewksbury. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Electronic Materials, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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