William L. Harrington
- Electrical and Electronic Engineering
- Computational Mechanics top 5%
- Materials Chemistry
- Surfaces, Coatings and Films top 10%
- Atomic and Molecular Physics, and Optics
- Co-authors
- C. W. MageeRichard E. HonigAlvin M. GoodmanRichard H. WilliamsR. K. SkogerboeGeorge H. MorrisonMichael CurrentM. A. Lieberman
- Topics
- Ion-surface interactions and analysis (9 papers)Electron and X-Ray Spectroscopy Techniques (4 papers)Integrated Circuits and Semiconductor Failure Analysis (4 papers)
- Partner nations
- United States
In The Last Decade
William L. Harrington
12 papers receiving 411 citations
Peers
Comparison fields: 5 of 51
- Electrical and Electronic Engineering 288
- Computational Mechanics 263
- Materials Chemistry 149
- Surfaces, Coatings and Films 73
- Atomic and Molecular Physics, and Optics 69
Countries citing papers authored by William L. Harrington
This map shows the geographic impact of William L. Harrington's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by William L. Harrington with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites William L. Harrington more than expected).
Fields of papers citing papers by William L. Harrington
This network shows the impact of papers produced by William L. Harrington. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by William L. Harrington. The network helps show where William L. Harrington may publish in the future.
Co-authorship network of co-authors of William L. Harrington
This figure shows the co-authorship network connecting the top 25 collaborators of William L. Harrington. A scholar is included among the top collaborators of William L. Harrington based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with William L. Harrington. William L. Harrington is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 15 | |
| 2 | 4 | |
| 3 | 36 | |
| 4 | 99 | |
| 5 | 9 | |
| 6 | 62 | |
| 7 | 98 | |
| 8 | 59 | |
| 9 | 40 | |
| 10 | 4 | |
| 11 | 14 | |
| 12 | 23 |
About William L. Harrington
William L. Harrington is a scholar working on Radiation, Surfaces, Coatings and Films and Computational Mechanics, having authored 12 papers that have together received 463 indexed citations. Recurring topics across this work include Ion-surface interactions and analysis (9 papers), Electron and X-Ray Spectroscopy Techniques (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). The work is most often cited by research in Computational Mechanics (263 citations), Surfaces, Coatings and Films (73 citations) and Radiation (53 citations). William L. Harrington has collaborated with scholars based in United States. Frequent co-authors include C. W. Magee, Richard E. Honig, Alvin M. Goodman, Richard H. Williams, R. K. Skogerboe, George H. Morrison, Michael Current, M. A. Lieberman, Xueyu Qian and Paul K. Chu. Their work appears in journals such as Applied Physics Letters, Analytical Chemistry and Thin Solid Films.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.