D. Vook

531 total citations
17 papers, 403 citations indexed

About

D. Vook is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. Vook has authored 17 papers receiving a total of 403 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in D. Vook's work include Semiconductor materials and devices (12 papers), Semiconductor Quantum Structures and Devices (6 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). D. Vook is often cited by papers focused on Semiconductor materials and devices (12 papers), Semiconductor Quantum Structures and Devices (6 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). D. Vook collaborates with scholars based in United States and Taiwan. D. Vook's co-authors include J. F. Gibbons, S. Reynolds, C.H. Diaz, R.W. Dutton, Zhiping Yu, Min Cao, T.H. Lee, S.S. Wong, B. Kleveland and Liam Madden and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. Vook

17 papers receiving 377 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Vook United States	11	362	164	62	22	21	17	403
P. J. Phillips United Kingdom	12	310 0.9×	226 1.4×	68 1.1×	31 1.4×	30 1.4×	36	378
A.T. Wu United States	13	417 1.2×	104 0.6×	48 0.8×	19 0.9×	27 1.3×	28	434
C.F. Schaus United States	12	535 1.5×	426 2.6×	58 0.9×	22 1.0×	23 1.1×	43	572
V. G. Riggs United States	11	337 0.9×	299 1.8×	49 0.8×	22 1.0×	23 1.1×	12	383
B. Rose France	11	296 0.8×	238 1.5×	60 1.0×	21 1.0×	20 1.0×	28	344
H. Kumabe Japan	12	335 0.9×	220 1.3×	82 1.3×	20 0.9×	42 2.0×	32	367
R. Thomä United States	9	332 0.9×	111 0.7×	67 1.1×	13 0.6×	33 1.6×	27	382
A. Scavennec France	11	434 1.2×	236 1.4×	23 0.4×	35 1.6×	30 1.4×	64	463
T. Taniwatari Japan	10	322 0.9×	210 1.3×	30 0.5×	19 0.9×	15 0.7×	19	355
J. D. Oberstar United States	12	307 0.8×	293 1.8×	84 1.4×	24 1.1×	21 1.0×	18	364

Countries citing papers authored by D. Vook

Since Specialization

Citations

This map shows the geographic impact of D. Vook's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Vook with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Vook more than expected).

Fields of papers citing papers by D. Vook

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Vook. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Vook. The network helps show where D. Vook may publish in the future.

Co-authorship network of co-authors of D. Vook

This figure shows the co-authorship network connecting the top 25 collaborators of D. Vook. A scholar is included among the top collaborators of D. Vook based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Vook. D. Vook is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

17 of 17 papers shown

Ancona, Mario G., et al.. (2003). Density-gradient analysis of tunneling in MOS structures with ultra-thin oxides. 235–238. 2 indexed citations

Kleveland, B., C.H. Diaz, D. Vook, et al.. (2002). Correction to "exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design". IEEE Journal of Solid-State Circuits. 37(2). 255–255. 1 indexed citations

Kleveland, B., C.H. Diaz, D. Vook, et al.. (2001). Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design. IEEE Journal of Solid-State Circuits. 36(10). 1480–1488. 82 indexed citations

Vook, D., et al.. (2000). Density-gradient analysis of MOS tunneling. IEEE Transactions on Electron Devices. 47(12). 2310–2319. 55 indexed citations

Choi, Chang-Hoon, Jung-Suk Goo, Zhiping Yu, et al.. (1999). C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (t/sub ox/=1.3-1.8 nm). 63–64. 11 indexed citations

Choi, Changhoon, Jung-Suk Goo, Zhiping Yu, et al.. (1999). MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm). IEEE Electron Device Letters. 20(6). 292–294. 56 indexed citations

Vook, D., T. I. Kamins, Jane Lin, et al.. (1994). Double-diffused graded SiGe-base bipolar transistors. IEEE Transactions on Electron Devices. 41(6). 1013–1018. 10 indexed citations

Samara, G. A., D. Vook, & J. F. Gibbons. (1992). Deep electronic levels at growth interrupted interfaces in low-temperature-grown GaAs and the pressure dependence of these levels. Journal of Applied Physics. 71(4). 1807–1814. 1 indexed citations

Kamins, T. I., D. Vook, Paul K. L. Yu, & J. E. Turner. (1992). Kinetics of selective epitaxial deposition of Si1−xGex. Applied Physics Letters. 61(6). 669–671. 33 indexed citations

10.

Samara, G. A., D. Vook, & J. F. Gibbons. (1992). Breathing-mode relaxation associated with electron emission and capture processes ofEL2 in GaAs. Physical Review Letters. 68(10). 1582–1585. 14 indexed citations

11.

Vook, D. & J. F. Gibbons. (1990). Deep levels and impurities at growth-interrupted interfaces: Temperature- and gas-switched metalorganic chemical vapor deposition of GaAs with tertiarybutylarsenic. Journal of Applied Physics. 67(4). 2100–2108. 4 indexed citations

12.

Vook, D., et al.. (1988). Open-tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model. Journal of Applied Physics. 63(4). 1052–1059. 40 indexed citations

13.

Vook, D., S. Reynolds, & J. F. Gibbons. (1987). Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic. Applied Physics Letters. 50(19). 1386–1387. 38 indexed citations

14.

Reynolds, S., et al.. (1987). Rapid thermal annealing of Si-implanted GaAs with trimethylarsenic overpressure. Applied Physics Letters. 51(12). 916–918. 29 indexed citations

15.

Gibbons, J. F., S. Reynolds, C. M. Gronet, et al.. (1987). Limited Reaction Processing: Silicon and III–V Materials. MRS Proceedings. 92. 4 indexed citations

16.

Gibbons, J. F., C. M. Gronet, James C. Sturm, et al.. (1986). Limited Reaction Processing. MRS Proceedings. 74. 2 indexed citations

17.

Reynolds, S., D. Vook, & J. F. Gibbons. (1986). Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition. Applied Physics Letters. 49(25). 1720–1722. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact