T. K. Higman

449 total citations
22 papers, 340 citations indexed

About

T. K. Higman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, T. K. Higman has authored 22 papers receiving a total of 340 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in T. K. Higman's work include Semiconductor materials and devices (12 papers), Semiconductor Quantum Structures and Devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). T. K. Higman is often cited by papers focused on Semiconductor materials and devices (12 papers), Semiconductor Quantum Structures and Devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). T. K. Higman collaborates with scholars based in United States. T. K. Higman's co-authors include J. J. Coleman, K. Hess, M.A. Emanuel, J.M. Higman, L. M. Miller, G. Esteban Fernández, I.C. Kizilyalli, P. K. York, S.A. Campbell and K. Y. Cheng and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. K. Higman

21 papers receiving 319 citations

Peers

T. K. Higman
I. Németh Germany
R. Brockenbrough United States
M. O. Tanner United States
Yves Mols Belgium
R. L. Mattis United States
V. K. Yang United States
Zhian He United States
L. Buydens Belgium
O. Eknoyan United States
K. W. Carey United States
I. Németh Germany
T. K. Higman
Citations per year, relative to T. K. Higman T. K. Higman (= 1×) peers I. Németh

Countries citing papers authored by T. K. Higman

Since Specialization
Citations

This map shows the geographic impact of T. K. Higman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. K. Higman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. K. Higman more than expected).

Fields of papers citing papers by T. K. Higman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. K. Higman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. K. Higman. The network helps show where T. K. Higman may publish in the future.

Co-authorship network of co-authors of T. K. Higman

This figure shows the co-authorship network connecting the top 25 collaborators of T. K. Higman. A scholar is included among the top collaborators of T. K. Higman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. K. Higman. T. K. Higman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shi, Xiaoqing, et al.. (2004). Properties of high-k/ultrahigh purity silicon nitride stacks. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(4). 1146–1151. 15 indexed citations
2.
3.
Higman, T. K., et al.. (2001). High Permittivity Oxide Gate Stacks on Silicon Incorporating UHV Silicon Nitride Interfacial Layers. MRS Proceedings. 670. 1 indexed citations
4.
Higman, T. K., et al.. (1996). Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 4153–4156. 6 indexed citations
5.
Higman, T. K., et al.. (1995). Mechanisms of surface anodization produced by scanning probe microscopes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(6). 2805–2808. 117 indexed citations
6.
Higman, T. K., et al.. (1995). Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal–insulator–semiconductor field-effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 786–788. 2 indexed citations
7.
Higman, T. K., et al.. (1995). Fabrication and transport measurements of atomic force microscope modified silicon metal–oxide–semiconductor field-effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(3). 1285–1289. 5 indexed citations
8.
Higman, T. K., et al.. (1994). Quantitative study of metal–oxide semiconductor field effect transistor damage induced by scanning tunneling microscope lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(6). 3731–3734. 3 indexed citations
9.
Higman, T. K., et al.. (1993). Low temperature nitridation of silicon by direct ammonia nitridation in a molecular-beam epitaxy reactor. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 992–993. 1 indexed citations
10.
Higman, T. K., et al.. (1992). Observation of light emission from real-space transfer devices. Applied Physics Letters. 60(11). 1342–1344. 11 indexed citations
11.
Higman, T. K., et al.. (1989). Observation of apparent inelastic tunneling between Landau levels in superlattices. Applied Physics Letters. 54(18). 1751–1753. 3 indexed citations
12.
Arnold, D., K. Hess, T. K. Higman, J. J. Coleman, & G. J. Iafrate. (1989). Dynamics of heterostructure hot-electron diodes. Journal of Applied Physics. 66(3). 1423–1427. 8 indexed citations
13.
Fernández, G. Esteban, et al.. (1989). Strained layer InGaAs channel negative-resistance field-effect transistor. Journal of Applied Physics. 65(1). 378–380. 16 indexed citations
14.
Higman, T. K., et al.. (1988). Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode. Applied Physics Letters. 53(17). 1623–1625. 17 indexed citations
15.
Kolodzey, J., J. Laskar, T. K. Higman, et al.. (1988). Microwave frequency operation of the heterostructure hot-electron diode. IEEE Electron Device Letters. 9(6). 272–274. 7 indexed citations
16.
Kizilyalli, I.C., et al.. (1988). Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices. Solid-State Electronics. 31(3-4). 355–357. 8 indexed citations
17.
Emanuel, M.A., et al.. (1988). Theoretical and experimental investigations of the heterostructure hot electron diode. Solid-State Electronics. 31(3-4). 589–592. 12 indexed citations
18.
Higman, T. K., J.M. Higman, M.A. Emanuel, K. Hess, & J. J. Coleman. (1987). Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes. Journal of Applied Physics. 62(4). 1495–1499. 22 indexed citations
19.
20.
Hess, K., T. K. Higman, M.A. Emanuel, & J. J. Coleman. (1986). New ultrafast switching mechanism in semiconductor heterostructures. Journal of Applied Physics. 60(10). 3775–3777. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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