S.G. Jahn

400 total citations
26 papers, 330 citations indexed

About

S.G. Jahn is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.G. Jahn has authored 26 papers receiving a total of 330 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 14 papers in Computational Mechanics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.G. Jahn's work include Ion-surface interactions and analysis (14 papers), Semiconductor materials and interfaces (9 papers) and Crystallography and Radiation Phenomena (7 papers). S.G. Jahn is often cited by papers focused on Ion-surface interactions and analysis (14 papers), Semiconductor materials and interfaces (9 papers) and Crystallography and Radiation Phenomena (7 papers). S.G. Jahn collaborates with scholars based in Germany, Switzerland and Netherlands. S.G. Jahn's co-authors include H. Hofsäß, U. Wahl, Stefan Winter, E. Recknagel, Carsten Ronning, K. Bharuth‐Ram, J. G. Correia, J.G. Marques, A. Vantomme and G.J. Beyer and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

S.G. Jahn

26 papers receiving 322 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.G. Jahn Germany	11	136	128	117	106	79	26	330
J. W. Glesener United States	11	137 1.0×	226 1.8×	42 0.4×	134 1.3×	54 0.7×	28	403
C. Paolini Italy	11	172 1.3×	168 1.3×	78 0.7×	55 0.5×	38 0.5×	27	335
Stuart P. Lansley New Zealand	12	110 0.8×	215 1.7×	67 0.6×	38 0.4×	12 0.2×	32	310
E. I. Lipatov Russia	11	86 0.6×	196 1.5×	63 0.5×	73 0.7×	12 0.2×	48	308
R. A. Levesque United States	8	96 0.7×	63 0.5×	28 0.2×	46 0.4×	84 1.1×	12	331
Zhong-Lie Wang China	11	207 1.5×	201 1.6×	231 2.0×	102 1.0×	14 0.2×	46	498
K. Naukkarinen Finland	7	170 1.3×	121 0.9×	23 0.2×	85 0.8×	42 0.5×	17	316
M.D. Ashbaugh United States	10	104 0.8×	141 1.1×	120 1.0×	43 0.4×	22 0.3×	19	376
Q. F. Xiao United States	13	60 0.4×	66 0.5×	43 0.4×	124 1.2×	37 0.5×	39	350
Leonard Müller Germany	11	104 0.8×	121 0.9×	20 0.2×	150 1.4×	51 0.6×	28	336

Countries citing papers authored by S.G. Jahn

Since Specialization

Citations

This map shows the geographic impact of S.G. Jahn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.G. Jahn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.G. Jahn more than expected).

Fields of papers citing papers by S.G. Jahn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.G. Jahn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.G. Jahn. The network helps show where S.G. Jahn may publish in the future.

Co-authorship network of co-authors of S.G. Jahn

This figure shows the co-authorship network connecting the top 25 collaborators of S.G. Jahn. A scholar is included among the top collaborators of S.G. Jahn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.G. Jahn. S.G. Jahn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wahl, U., J. G. Correia, A. Czermak, et al.. (2004). Position-sensitive Si pad detectors for electron emission channeling experiments. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 524(1-3). 245–256. 49 indexed citations

Correia, J. G., J.G. Marques, E. Alves, et al.. (1997). Microscopic studies of implanted 73As in diamond. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 127-128. 723–726. 19 indexed citations

Beyer, G.J., Robin E. Offord, Yulia Aleksandrova, et al.. (1997). The influence of EDTMP-concentration on the biodistribution of radio-lanthanides and 225-Ac in tumor-bearing mice. Nuclear Medicine and Biology. 24(5). 367–372. 37 indexed citations

Jahn, S.G., et al.. (1996). Thermal stability of substitutional Ag in CdTe. Journal of Crystal Growth. 161(1-4). 172–176. 9 indexed citations

Burchard, Almut, et al.. (1996). Defect recovery of ion-implanted CdTe. Journal of Crystal Growth. 161(1-4). 128–133. 2 indexed citations

Wahl, U., et al.. (1996). Alpha-emission channeling investigations of the lattice location of Li in Ge. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 76–81. 7 indexed citations

Bharuth‐Ram, K., et al.. (1996). Lattice sites of Li in CdTe. Journal of Crystal Growth. 161(1-4). 168–171. 3 indexed citations

Bharuth‐Ram, K., et al.. (1995). Lattice sites of arsenic ions implanted in diamond. Journal of Applied Physics. 78(8). 5180–5182. 14 indexed citations

Wehner, Michael, et al.. (1995). PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe <sup>77</sup>Br(<sup>77</sup>Se). Materials science forum. 196-201. 1419–1424. 3 indexed citations

10.

Bharuth‐Ram, K., et al.. (1995). Lattice sites of ion implanted Li in diamond. Applied Physics Letters. 66(20). 2733–2735. 35 indexed citations

11.

Jahn, S.G., et al.. (1995). Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe. Materials science forum. 196-201. 315–320. 4 indexed citations

12.

Wahl, U., et al.. (1995). Lattice Sites of Li in Si and Ge. Materials science forum. 196-201. 115–120. 1 indexed citations

13.

Hofsäß, H., U. Wahl, & S.G. Jahn. (1994). Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling. Hyperfine Interactions. 84(1). 27–41. 16 indexed citations

14.

Hofsäß, H., et al.. (1994). Lattice sites of ion implanted Li in indium antimonide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 468–473. 10 indexed citations

15.

Wahl, U., et al.. (1994). Li on bond-center sites in Si. Physical review. B, Condensed matter. 50(4). 2176–2180. 9 indexed citations

16.

Burchard, Almut, M. Deicher, H. Hofsäß, et al.. (1993). Microscopic characterisation of heavy-ion implanted diamond. Physica B Condensed Matter. 185(1-4). 150–153. 6 indexed citations

17.

Wahl, U., H. Hofsäß, S.G. Jahn, et al.. (1992). Lattice site changes of ion implanted 8Li in Si studied by alpha emission channeling. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 63(1-2). 91–94. 8 indexed citations

18.

Hofsäß, H., Stefan Winter, S.G. Jahn, U. Wahl, & E. Recknagel. (1992). Emission channeling studies in semiconductors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 63(1-2). 83–90. 27 indexed citations

19.

Bartos, A., et al.. (1990). PAC- and channeling experiments in YBa2Cu3O7 − x. Journal of the Less Common Metals. 164-165. 1121–1128. 7 indexed citations

20.

Winter, Stefan, H. Hofsäß, S.G. Jahn, et al.. (1990). Lattice location of ion-implanted radioactive dopants in compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 48(1-4). 211–215. 10 indexed citations

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