Lin‐An Yang

1.3k total citations
114 papers, 971 citations indexed

About

Lin‐An Yang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Lin‐An Yang has authored 114 papers receiving a total of 971 indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Condensed Matter Physics, 72 papers in Electrical and Electronic Engineering and 39 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Lin‐An Yang's work include GaN-based semiconductor devices and materials (74 papers), Semiconductor Quantum Structures and Devices (34 papers) and Superconducting and THz Device Technology (22 papers). Lin‐An Yang is often cited by papers focused on GaN-based semiconductor devices and materials (74 papers), Semiconductor Quantum Structures and Devices (34 papers) and Superconducting and THz Device Technology (22 papers). Lin‐An Yang collaborates with scholars based in China, Japan and United States. Lin‐An Yang's co-authors include Yue Hao, Yue Hao, Jincheng Zhang, Xiaohua Ma, Shengrui Xu, S.I. Long, Wei Mao, Yang Li, Zhi Jin and Xiaowei Zhou and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Lin‐An Yang

103 papers receiving 892 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lin‐An Yang China 17 648 634 293 270 179 114 971
Kozo Makiyama Japan 21 722 1.1× 1.2k 1.9× 370 1.3× 236 0.9× 143 0.8× 96 1.4k
D. Regan United States 17 1.1k 1.8× 1.1k 1.7× 311 1.1× 518 1.9× 161 0.9× 27 1.3k
Yasuo Ohno Japan 17 706 1.1× 832 1.3× 262 0.9× 240 0.9× 179 1.0× 90 1.0k
Adele Schmitz United States 9 632 1.0× 693 1.1× 354 1.2× 288 1.1× 173 1.0× 14 968
K. Joshin Japan 24 1.0k 1.5× 1.6k 2.5× 503 1.7× 305 1.1× 197 1.1× 94 1.8k
A. Kurdoghlian United States 20 878 1.4× 1.1k 1.8× 368 1.3× 201 0.7× 67 0.4× 44 1.2k
E. Morvan France 18 929 1.4× 1.2k 1.9× 390 1.3× 280 1.0× 201 1.1× 101 1.4k
P. Hashimoto United States 25 1.4k 2.2× 1.4k 2.2× 418 1.4× 472 1.7× 155 0.9× 44 1.6k
A. Margomenos United States 15 495 0.8× 881 1.4× 194 0.7× 201 0.7× 81 0.5× 36 995
C. Wilker United States 17 518 0.8× 394 0.6× 230 0.8× 175 0.6× 116 0.6× 37 797

Countries citing papers authored by Lin‐An Yang

Since Specialization
Citations

This map shows the geographic impact of Lin‐An Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lin‐An Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lin‐An Yang more than expected).

Fields of papers citing papers by Lin‐An Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lin‐An Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lin‐An Yang. The network helps show where Lin‐An Yang may publish in the future.

Co-authorship network of co-authors of Lin‐An Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Lin‐An Yang. A scholar is included among the top collaborators of Lin‐An Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lin‐An Yang. Lin‐An Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Lin‐An, Chengjie Zhang, Hongjin Li, et al.. (2025). Versatile 1D-structured Co 3 O 4 –Co/NC@N–carbon nanotubes for high-performance lithium storage. Chemical Communications. 61(66). 12365–12368.
2.
3.
Wang, Yuru, Jiayin Li, Lin‐An Yang, et al.. (2024). Efficient electrochemical immunosensor for detection of bovine interferon gamma‐based gold nanoparticles/chitosan composite. Journal of the Chinese Chemical Society. 71(8). 804–810.
4.
Yang, Lin‐An, et al.. (2024). Modulation the carrier separation mechanism of CdS photoanode: From vacancy to crystal phase transformation. International Journal of Hydrogen Energy. 84. 951–958.
5.
Xu, Rui, et al.. (2023). A 5.8-GHz GaN-Based Rectifier with High Power and High Efficiency. 1–3. 4 indexed citations
6.
Li, Yang, Tingting Wang, Xiao Wang, et al.. (2023). Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification. IEEE Transactions on Microwave Theory and Techniques. 72(4). 2310–2317. 7 indexed citations
7.
Li, Yang, Jiayi Yang, Tingting Wang, et al.. (2022). High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring. IEEE Transactions on Microwave Theory and Techniques. 71(2). 898–906. 9 indexed citations
8.
Yang, Lin‐An, et al.. (2021). An In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As double hetero-junction junctionless TFET. Japanese Journal of Applied Physics. 60(7). 74001–74001. 2 indexed citations
9.
Yang, Lin‐An, et al.. (2021). Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs. Semiconductor Science and Technology. 36(5). 55010–55010. 4 indexed citations
10.
Yang, Lin‐An, et al.. (2020). Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects. Semiconductor Science and Technology. 36(2). 25001–25001. 6 indexed citations
11.
Yang, Lin‐An, et al.. (2020). Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier. Semiconductor Science and Technology. 36(1). 15018–15018. 2 indexed citations
12.
Yang, Lin‐An, et al.. (2019). Comparison of drift–diffusion model and hydrodynamic carrier transport model for simulation of GaN-based IMPATT diodes. Modern Physics Letters B. 33(13). 1950156–1950156. 2 indexed citations
13.
Yang, Lin‐An, et al.. (2019). Performance enhancement of the dual-metal gate In 0.53 Ga 0.47 As dopingless TFET by using a platinum metal strip insertion. Japanese Journal of Applied Physics. 58(10). 104001–104001. 5 indexed citations
14.
Yang, Lin‐An, et al.. (2019). A new lattice-matched In 0.17 Al 0.83 N ∼ GaN based heterostructure IMPATT diode for terahertz application. Semiconductor Science and Technology. 34(11). 115011–115011. 5 indexed citations
15.
Li, Yang, et al.. (2017). Design of Millimeter-Wave Resonant Cavity and Filter Using 3-D Substrate-Integrated Circular Waveguide. IEEE Microwave and Wireless Components Letters. 27(8). 706–708. 17 indexed citations
16.
Li, Yang, et al.. (2016). Design of 3D filtering antenna for the application of terahertz. Electronics Letters. 53(1). 7–8. 5 indexed citations
17.
Chen, Hao, et al.. (2013). The impact of trapping centers on AlGaN/GaN resonant tunneling diode. IEICE Electronics Express. 10(19). 20130588–20130588. 1 indexed citations
18.
Mao, Wei, Yue Hao, Cui Yang, et al.. (2013). InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric. Chinese Physics Letters. 30(5). 58502–58502. 6 indexed citations
19.
Yang, Lin‐An, et al.. (2010). Use of AlGaN launcher in terahertz GaN Gunn diode. 1862–1864. 1 indexed citations
20.
Hao, Yue, et al.. (2009). XバンドGaN結合した固体電力増幅器【Powered by NICT】. Journal of Semiconductors. 30(9). 61. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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