Th. Gessmann

1.8k citations
31 papers · 1.5k indexed · 1 hit paper · h-index 15

Th. Gessmann

30 papers receiving 1.4k citations

Hit Papers

Experimental analysis and theoretical model for anomalous...3942003202620102018100200300

Peers

Th. Gessmann
Comparison fields: 5 of 67
  • Condensed Matter Physics 807
  • Atomic and Molecular Physics, and Optics 533
  • Electronic, Optical and Magnetic Materials 262
  • Electrical and Electronic Engineering 814
  • Materials Chemistry 563
Replace Nobuyuki Ikarashi with:
Nobuyuki Ikarashi Japan
R. M. Fletcher United States
Eirini Sarigiannidou France
H. Vinzelberg Germany
N. Nakayama Japan
A. Redondo‐Cubero Spain
R. S. Kern United States
Paola Favia Belgium
Chao Zhao China
Th. Gessmann relative to Nobuyuki Ikarashi Japan Nobuyuki Ikarashi's profile →
Citations per field
00.5×2.5×
Nobuyuki Ikarashi · 1×
Citations per year

Countries citing papers authored by Th. Gessmann

Since Specialization
Citations

This map shows the geographic impact of Th. Gessmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Th. Gessmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Th. Gessmann more than expected).

Fields of papers citing papers by Th. Gessmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Th. Gessmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Th. Gessmann. The network helps show where Th. Gessmann may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Th. Gessmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Th. Gessmann Line = papers co-authored together Th. Gessmann links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1 200610
2 200562
3 20051
4
Illumination sources based on multiple light-emitting diodes
20041
5 20048
6 20042
7
Light-emitting diodes with omni-directional reflectors
20032
8 20031
9 200350
10
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodesbreakdown →
2003394
11 200231
12 20018
13 20014
14 20012
15 19983
16 19973
17 19972
18 199511
19 199514
20 19946

About Th. Gessmann

Th. Gessmann is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 31 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (7 papers), Semiconductor materials and devices (7 papers), Muon and positron interactions and applications (7 papers), Photonic Crystals and Applications (4 papers), Microstructure and mechanical properties (4 papers), Semiconductor Quantum Structures and Devices (4 papers) and Copper Interconnects and Reliability (3 papers). The work is most often cited by research in Condensed Matter Physics (807 citations), Atomic and Molecular Physics, and Optics (533 citations), Electronic, Optical and Magnetic Materials (262 citations), Electrical and Electronic Engineering (814 citations) and Materials Chemistry (563 citations). Th. Gessmann has collaborated with scholars based in United States, Germany and Taiwan. Frequent co-authors include E. Fred Schubert, Jay Shah, Y. Xi, E. Fred Schubert, Sameer Chhajed, J.W. Graff, Jingtian Xi, Jinn‐Kong Sheu, Mary H. Crawford and A. J. Fischer. Their work appears in journals such as Journal of Applied Physics, Nanostructured Materials, Applied Physics Letters, Applied Surface Science and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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