Shinya Takashima

2.0k total citations
55 papers, 1.6k citations indexed

About

Shinya Takashima is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shinya Takashima has authored 55 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Condensed Matter Physics, 38 papers in Electrical and Electronic Engineering and 25 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shinya Takashima's work include GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (37 papers) and Ga2O3 and related materials (15 papers). Shinya Takashima is often cited by papers focused on GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (37 papers) and Ga2O3 and related materials (15 papers). Shinya Takashima collaborates with scholars based in Japan, United States and United Kingdom. Shinya Takashima's co-authors include Masaharu Edo, Katsunori Ueno, H. Takagi, Hideaki Matsuyama, Akira Uedono, Shoji Ishibashi, Ryo Tanaka, M. Nohara, Shigefusa F. Chichibu and Kazunobu Kojima and has published in prestigious journals such as Nature, Physical Review Letters and Applied Physics Letters.

In The Last Decade

Shinya Takashima

51 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shinya Takashima Japan 23 1.4k 881 763 348 298 55 1.6k
Mamoru Imade Japan 20 1.2k 0.8× 432 0.5× 771 1.0× 775 2.2× 281 0.9× 91 1.3k
Shinya Nunoue Japan 15 932 0.7× 393 0.4× 380 0.5× 435 1.3× 479 1.6× 61 1.1k
Branko Šantić Croatia 17 704 0.5× 625 0.7× 462 0.6× 699 2.0× 361 1.2× 46 1.3k
P.R. Hageman Netherlands 23 1.2k 0.9× 844 1.0× 562 0.7× 730 2.1× 450 1.5× 99 1.7k
T. Metzger Germany 10 935 0.7× 424 0.5× 489 0.6× 609 1.8× 395 1.3× 16 1.3k
Yoshihiko Toyoda Japan 9 1.5k 1.1× 682 0.8× 785 1.0× 918 2.6× 551 1.8× 16 1.9k
T. Miyajima Japan 16 610 0.4× 642 0.7× 406 0.5× 659 1.9× 702 2.4× 42 1.3k
Gordon Callsen Germany 25 742 0.5× 648 0.7× 517 0.7× 812 2.3× 529 1.8× 60 1.5k
M. Garter United States 11 836 0.6× 519 0.6× 523 0.7× 744 2.1× 201 0.7× 16 1.1k
G. Kamler Poland 17 781 0.6× 350 0.4× 368 0.5× 418 1.2× 264 0.9× 59 902

Countries citing papers authored by Shinya Takashima

Since Specialization
Citations

This map shows the geographic impact of Shinya Takashima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shinya Takashima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shinya Takashima more than expected).

Fields of papers citing papers by Shinya Takashima

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shinya Takashima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shinya Takashima. The network helps show where Shinya Takashima may publish in the future.

Co-authorship network of co-authors of Shinya Takashima

This figure shows the co-authorship network connecting the top 25 collaborators of Shinya Takashima. A scholar is included among the top collaborators of Shinya Takashima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shinya Takashima. Shinya Takashima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Uedono, Akira, Ryo Tanaka, Shinya Takashima, et al.. (2024). Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation. physica status solidi (b). 261(5). 6 indexed citations
3.
Chichibu, Shigefusa F., Kohei Shima, Akira Uedono, et al.. (2024). Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers. Journal of Applied Physics. 135(18). 7 indexed citations
4.
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Ichikawa, Yuki, et al.. (2023). Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing. Japanese Journal of Applied Physics. 63(2). 02SP31–02SP31. 3 indexed citations
6.
Yi, Wei, Tadakatsu Ohkubo, Jun Chen, et al.. (2023). Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN. Journal of Applied Physics. 133(18). 4 indexed citations
7.
Uzuhashi, Jun, Jun Chen, Wei Yi, et al.. (2022). Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131(18). 13 indexed citations
8.
Shiojima, Kenji, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, & Masaharu Edo. (2021). Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes. Japanese Journal of Applied Physics. 60(5). 56503–56503. 3 indexed citations
9.
Shima, Kohei, Ryo Tanaka, Shinya Takashima, et al.. (2021). Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg. Applied Physics Letters. 119(18). 25 indexed citations
10.
Chen, Jun, Wei Yi, Ryo Tanaka, et al.. (2020). Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes. Journal of Electronic Materials. 49(9). 5196–5204. 2 indexed citations
11.
Yi, Wei, Jun Uzuhashi, Takashi Kimura, et al.. (2020). Mg diffusion and activation along threading dislocations in GaN. Applied Physics Letters. 116(24). 20 indexed citations
12.
Konishi, Keita, et al.. (2019). Dependence of thermal stability of GaN on substrate orientation and off-cut. Japanese Journal of Applied Physics. 58(SC). SCCD17–SCCD17. 5 indexed citations
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Chichibu, Shigefusa F., Akira Uedono, Kazunobu Kojima, et al.. (2018). The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN. Journal of Applied Physics. 123(16). 119 indexed citations
15.
Mitsuishi, Kazutaka, Toru Hara, Koji Kimoto, et al.. (2018). Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates. Nanoscale Research Letters. 13(1). 403–403. 20 indexed citations
16.
Horita, Masahiro, Shinya Takashima, Ryo Tanaka, et al.. (2016). Retraction: “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”. Japanese Journal of Applied Physics. 55(11). 119201–119201. 5 indexed citations
17.
Uedono, Akira, Shinya Takashima, Masaharu Edo, et al.. (2015). Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam. physica status solidi (b). 252(12). 2794–2801. 63 indexed citations
18.
Takashima, Shinya, Zhongda Li, & T. Paul Chow. (2012). DC breakdown and TDDB study of ALD SiO<inf>2</inf> on GaN. 1–4. 1 indexed citations
19.
Ichitsubo, Tetsu, Shinya Takashima, Eiichiro Matsubara, et al.. (2011). Control of c-axis orientation of L1-FePd in dual-phase-equilibrium FePd/Fe thin films. Journal of Applied Physics. 109(3). 9 indexed citations
20.
Gauzzi, Andrea, Shinya Takashima, Nao Takeshita, et al.. (2007). Enhancement of Superconductivity and Evidence of Structural Instability in Intercalated GraphiteCaC6under High Pressure. Physical Review Letters. 98(6). 67002–67002. 101 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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