T. Wang

636 citations

15 papers · 539 indexed · h-index 10

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 15
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 5
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 7
- Quantum and electron transport phenomena 2
Materials Chemistry
- ZnO doping and properties 3
Mechanics of Materials
- Metal and Thin Film Mechanics 4
Electrical and Electronic Engineering
- Semiconductor materials and devices 6
Computational Mechanics
- Ion-surface interactions and analysis 1

Co-authors: Jie Bai Shiro Sakai Shigeki Sakai M. Lachab Jin‐Ping Ao Daisuke Nakagawa Petr G. Eliseev Y. Ohno
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (6 papers)Journal of Crystal Growth (4 papers)physica status solidi (b) (2 papers)
Partner nations: Japan United Kingdom France

In The Last Decade

T. Wang

15 papers receiving 524 citations

Peers

Countries citing papers authored by T. Wang

Since Specialization

Citations

This map shows the geographic impact of T. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Wang more than expected).

Fields of papers citing papers by T. Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Wang. The network helps show where T. Wang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Wang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Wang Line = papers co-authored together T. Wang links everyone, so they are left out of the graph.

All Works

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15 of 15 papers shown

#	Work
1	Space charge effects, carrier capture transient behaviour and α particle detection in semi-insulating GaN Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·J. Vaitkus,E. Gaubas,Augustin Caverzasi,Shigeki Sakai,T. Wang,K. Smith,W. R. Cunningham	2003	5
2	1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate Applied Physics Letters ·T. Wang,Tuncar Salih,Ιωάννης Γαϊτάνης,Jin‐Ping Ao,Jie Bai,Shigeki Sakai	2002	80
3	Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes Applied Physics Letters ·T. Wang,Jie Bai,Shigeki Sakai,J. A. Enlow	2001	91
4	A study of dislocations in InGaN/GaN multiple-quantum-well structure grown on (110) sapphire substrate Journal of Crystal Growth ·Jie Bai,T. Wang,Thomas A. Lacy,Shigeki Sakai	2001	9
5	Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates Journal of Crystal Growth ·T. Wang,Jie Bai,Shigeki Sakai	2001	7
6	Energy Relaxation by Warm Two-Dimensional Electrons in a GaN/AlGaN Heterostructure physica status solidi (b) ·N. M. Stanton,A. J. Kent,S. A. Cavill,А. В. Акимов,Jessica Sarver,J. J. Harris,T. Wang,Shiro Sakai	2001	7
7	Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures Applied Physics Letters ·Ruben Cognola,J. J. Harris,A. J. Kent,T. Wang,Shiro Sakai,D. K. Maude,J.C. Portal	2001	19
8	Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition Applied Physics Letters ·T. Wang,Augustin Caverzasi,Hong‐Bo Sun,Jim Harvey,Jie Bai,Shiro Sakai,Hiroaki Misawa	2000	52
9	Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures Journal of Applied Physics ·Jie Bai,T. Wang,Shiro Sakai	2000	122
10	Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures Applied Physics Letters ·T. Wang,M. S. P. Srikar,Jie Bai,Augustin Caverzasi,M. Lachab,Shiro Sakai,Petr G. Eliseev	2000	53
11	Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process Journal of Applied Physics ·M. Lachab,Nes, W., van,S Amelot,Yasuhiro Ishikawa,Q. Fareed,T. Wang,Takehiro Nishikawa,Katsushi Nishino,Shiro Sakai	2000	12
12	Investigation of InGaN/GaN Quantum Wells Grown on Sapphire and Bulk GaN Substrates physica status solidi (b) ·T. Sugahara,C Hornstein,M. Lachab,R. S. Qhalid Fareed,S. Tottori,T. Wang	1999	7
13	Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate Applied Physics Letters ·T. Wang,Y. Ohno,M. Lachab,Daisuke Nakagawa,Augustin Caverzasi,Shiro Sakai,Hideo Ohno	1999	55
14	Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth Journal of Crystal Growth ·S Amelot,Katsuo TERUI,M. Hao,Y. Morishima,T. Wang,Yoshiki Naoi,Shiro Sakai	1999	13
15	Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD Journal of Crystal Growth ·S Amelot,Nes, W., van,M. Lachab,R. S. Qhalid Fareed,Yasuhiro Ishikawa,T. Wang,Yoshiki Naoi,Shiro Sakai	1999	7

About T. Wang

T. Wang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electrical and Electronic Engineering, having authored 15 papers that have together received 539 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (7 papers), Semiconductor materials and devices (6 papers), Ga2O3 and related materials (5 papers), Metal and Thin Film Mechanics (4 papers), ZnO doping and properties (3 papers), Quantum and electron transport phenomena (2 papers) and Ion-surface interactions and analysis (1 paper). The work is most often cited by research in Condensed Matter Physics (488 citations), Electronic, Optical and Magnetic Materials (257 citations), Atomic and Molecular Physics, and Optics (225 citations), Materials Chemistry (251 citations) and Mechanics of Materials (83 citations). T. Wang has collaborated with scholars based in Japan, United Kingdom and France. Frequent co-authors include Jie Bai, Shiro Sakai, Shigeki Sakai, M. Lachab, Jin‐Ping Ao, Daisuke Nakagawa, Petr G. Eliseev, Y. Ohno, Hideo Ohno and Hiroaki Misawa. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, physica status solidi (b), Journal of Applied Physics and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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