Y. Morishima

413 total citations
10 papers, 356 citations indexed

About

Y. Morishima is a scholar working on Condensed Matter Physics, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Y. Morishima has authored 10 papers receiving a total of 356 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 6 papers in Materials Chemistry and 5 papers in Mechanics of Materials. Recurrent topics in Y. Morishima's work include GaN-based semiconductor devices and materials (9 papers), ZnO doping and properties (6 papers) and Ga2O3 and related materials (5 papers). Y. Morishima is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), ZnO doping and properties (6 papers) and Ga2O3 and related materials (5 papers). Y. Morishima collaborates with scholars based in Japan, Saudi Arabia and Portugal. Y. Morishima's co-authors include Yoshiki Naoi, Shigeki Sakai, Shiro Sakai, Akito Kuramata, K. Lorenz, Mufasila Mumthaz Muhammed, M. Hao, Iman S. Roqan, Sourindra Mahanty and T. Sugahara and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Y. Morishima

10 papers receiving 346 citations

Peers

Y. Morishima

CMP

MC

EOMM

EEE

MM

Jyh-Rong Gong Taiwan

P. Misra Germany

Kevin Udwary United States

G. Orsal France

Martin Hetzl Germany

K. Yoshimura Japan

A. Ougazzaden France

J. M. Gregie United States

Ramya Yeluri United States

M. Knelangen Germany

Jyh-Rong Gong Taiwan

Y. Morishima

186 ×0.7

CMP

219 ×1.0

MC

166 ×0.8

EOMM

151 ×1.3

EEE

59 ×0.8

MM

Citations per year, relative to Y. Morishima Y. Morishima (= 1×) peers Jyh-Rong Gong

Countries citing papers authored by Y. Morishima

Since Specialization

Citations

This map shows the geographic impact of Y. Morishima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Morishima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Morishima more than expected).

Fields of papers citing papers by Y. Morishima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Morishima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Morishima. The network helps show where Y. Morishima may publish in the future.

Co-authorship network of co-authors of Y. Morishima

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Morishima. A scholar is included among the top collaborators of Y. Morishima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Morishima. Y. Morishima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

1.

Ajia, Idris A., Yuichi Yamashita, K. Lorenz, et al.. (2018). GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. Applied Physics Letters. 113(8). 47 indexed citations

2.

Morishima, Y., et al.. (2015). InGaN LEDs prepared on β-Ga₂O₃(^-201) substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9363. 93631Z–93631Z. 6 indexed citations

3.

Muhammed, Mufasila Mumthaz, M. Peres, Yoshiyuki Yamashita, et al.. (2014). High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3. Applied Physics Letters. 105(4). 69 indexed citations

4.

Morishima, Y., et al.. (2009). Longitudinal bandgap modulated broadband (>150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth. Electronics Letters. 45(10). 521–522. 5 indexed citations

5.

Sakai, Shigeki, et al.. (2000). A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE. Journal of Crystal Growth. 221(1-4). 334–337. 102 indexed citations

6.

Morishima, Y., et al.. (2000). A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate. Journal of Crystal Growth. 213(1-2). 188–192. 35 indexed citations

7.

Wang, Jiannong, R. S. Qhalid Fareed, M. Hao, et al.. (1999). Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method. Journal of Applied Physics. 85(3). 1895–1899. 11 indexed citations

8.

Hao, M., Sourindra Mahanty, T. Sugahara, et al.. (1999). Configuration of dislocations in lateral overgrowth GaN films. Journal of Applied Physics. 85(9). 6497–6501. 25 indexed citations

9.

Hao, M., et al.. (1999). Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth. Journal of Crystal Growth. 197(1-2). 48–53. 13 indexed citations

10.

Mahanty, Sourindra, M. Hao, T. Sugahara, et al.. (1999). V-shaped defects in InGaN/GaN multiquantum wells. Materials Letters. 41(2). 67–71. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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