T. J. Echtermeyer

3.7k citations

30 papers · 2.9k indexed · 2 hit papers · h-index 18

Impact in

Materials Chemistry top 2%
- Graphene research and applications
- 2D Materials and Applications
- Carbon Nanotubes in Composites
Atomic and Molecular Physics, and Optics top 5%
- Quantum and electron transport phenomena

Papers in

Structural Biology 1
Materials Chemistry 17
- Graphene research and applications 15

Co-authors: Max C. Lemme H. Kurz M. Baus A. K. Geǐm Kostya S. Novoselov Roman Gorbachev Andrea C. Ferrari L. Britnell
Journals: Nano Letters (4 papers)IEEE Electron Device Letters (3 papers)Solid-State Electronics (3 papers)Nanoscale (2 papers)Nature Communications (1 paper)
Partner nations: Germany United Kingdom Greece

In The Last Decade

T. J. Echtermeyer

29 papers receiving 2.8k citations

Hit Papers

align trajectories log scale

Strong plasmonic enhancement of photovoltage in graphene 2011 · 736 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2011 Nature Communications
2007 IEEE Electron Device Letters

Peers

Countries citing papers authored by T. J. Echtermeyer

Since Specialization

Citations

This map shows the geographic impact of T. J. Echtermeyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. J. Echtermeyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. J. Echtermeyer more than expected).

Fields of papers citing papers by T. J. Echtermeyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. J. Echtermeyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. J. Echtermeyer. The network helps show where T. J. Echtermeyer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. J. Echtermeyer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. J. Echtermeyer Line = papers co-authored together T. J. Echtermeyer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Graphene‐Mica‐Based Photo‐Thermal Actuator for Small‐Scale Soft Robots Small ·Andriana Yoshinta Herindrawati, T. J. Echtermeyer	2024	21
2	Towards substrate engineering of graphene–silicon Schottky diode photodetectors Nanoscale ·Шульгина Ирина Валерьевна, Samuel Moeris, E. J. W. Whittaker, Matthew P. Halsall, E.W. Hill, Andrew G. Thomas, Patrick Parkinson, T. J. Echtermeyer	2018	43
3	Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light Physical review. B. ·Marco Taucer, T. J. Hammond, P. B. Corkum, Giulio Vampa, مروة انور صديق, Nicolas Thiré, Bruno E. Schmidt, François Légaré, Шульгина Ирина Валерьевна, Samuel Moeris, B. Hamilton, T. J. Echtermeyer, Melissa A. Denecke	2017	41
4	Surface Plasmon Polariton Graphene Photodetectors Nano Letters ·T. J. Echtermeyer, Silvia Milana, Ugo Sassi, Anna Eiden, M Wu, Elefterios Lidorikis, A. C. Ferrari	2015	159
5	Strong plasmonic enhancement of photovoltage in graphene Nature Communications ·T. J. Echtermeyer, L. Britnell, Christiane Pailo, Antonio Lombardo, Roman Gorbachev, A. N. Grigorenko, A. K. Geǐm, Andrea C. Ferrari, Kostya S. Novoselov Hit paper breakdown →	2011	736
6	Bistability and Oscillatory Motion of Natural Nanomembranes Appearing within Monolayer Graphene on Silicon Dioxide Nano Letters ·T. Mashoff, Marco Pratzer, V. Geringer, T. J. Echtermeyer, Max C. Lemme, Marcus Liebmann, Markus Morgenstern	2010	80
7	Intrinsic and extrinsic corrugation of monolayer graphene deposited onSiO2 Physical Review Letters ·V. Geringer, Marcus Liebmann, T. J. Echtermeyer, Sven Runte, Manuel Schmidt, Reinhard Rückamp, Max C. Lemme, Markus Morgenstern	2009	267
8	Complementary metal oxide semiconductor integration of epitaxial Gd2O3 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Max C. Lemme, H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, H. Kurz, Frederic Moore., Udo Schwalke, 宏之長谷川, Dominic Tetzlaff, H. J. Osten	2009	12
9	Mobility in graphene double gate field effect transistors Solid-State Electronics ·Max C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, Jens Bolten, Manuel Schmidt, T. Wahlbrink, H. Kurz	2008	88
10	Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics Electrochemical and Solid-State Letters ·H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, T. Mollenhauer, T. Wahlbrink, Max C. Lemme, H. Kurz	2008	9
11	Gentle FUSI NiSi metal gate process for high-k dielectric screening Microelectronic Engineering ·H.D.B. Gottlob, Max C. Lemme, M. Schmidt, T. J. Echtermeyer, T. Mollenhauer, H. Kurz, K. Cherkaoui, Paul K. Hurley, S. B. Newcomb	2008	4
12	Nonvolatile Switching in Graphene Field-Effect Devices IEEE Electron Device Letters ·T. J. Echtermeyer, Max C. Lemme, M. Baus, B. N. Szafranek, A. K. Geǐm, H. Kurz	2008	133
13	Towards Graphene Field Effect Transistors ECS Transactions ·Max C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, M. Schmidt, H. Kurz	2007	11
14	Graphene field-effect devices The European Physical Journal Special Topics ·T. J. Echtermeyer, Max C. Lemme, Jens Bolten, M. Baus, M. Ramsteiner, H. Kurz	2007	41
15	A Graphene Field-Effect Device IEEE Electron Device Letters ·Max C. Lemme, T. J. Echtermeyer, M. Baus, H. Kurz Hit paper breakdown →	2007	794
16	Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes Solid-State Electronics ·T. J. Echtermeyer, H.D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J.K. Efavi, Max C. Lemme, H. Kurz	2007	15
17	0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes IEEE Electron Device Letters ·H.D.B. Gottlob, T. J. Echtermeyer, M. Schmidt, T. Mollenhauer, J.K. Efavi, T. Wahlbrink, Max C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, H. Kurz	2006	36
18	Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics H.D.B. Gottlob, T. J. Echtermeyer, T. Mollenhauer, M. Schmidt, J.K. Efavi, T. Wahlbrink, Max C. Lemme, H. Kurz, Frederic Moore., Joseph T. Makarewicz, Udo Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten	2006	2
19	Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·H.D.B. Gottlob, T. Mollenhauer, T. Wahlbrink, M. Schmidt, T. J. Echtermeyer, J.K. Efavi, Max C. Lemme, H. Kurz	2006	6
20	CMOS Compatibility of Crystalline Gd/sub 2/Osub 3/ High-K / Metal Gate Stacks H.D.B. Gottlob, T. J. Echtermeyer, T. Mollenhauer, J.K. Efavi, M. Schmidt, T. Wahlbrink, Max C. Lemme, H. Kurz	2006	0

About T. J. Echtermeyer

T. J. Echtermeyer is a scholar working on Structural Biology, Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 30 papers that have together received 2.9k indexed citations. Recurring topics across this work include Graphene research and applications (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (12 papers), Nanowire Synthesis and Applications (5 papers), Semiconductor materials and interfaces (4 papers), Plasmonic and Surface Plasmon Research (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Materials Chemistry (2.2k citations), Atomic and Molecular Physics, and Optics (851 citations), Electronic, Optical and Magnetic Materials (494 citations), Biomedical Engineering (1.2k citations) and Electrical and Electronic Engineering (1.4k citations). T. J. Echtermeyer has collaborated with scholars based in Germany, United Kingdom and Greece. Frequent co-authors include Max C. Lemme, H. Kurz, M. Baus, A. K. Geǐm, Kostya S. Novoselov, Roman Gorbachev, Andrea C. Ferrari, L. Britnell, Antonio Lombardo and A. N. Grigorenko. Their work appears in journals such as Nano Letters, IEEE Electron Device Letters, Solid-State Electronics, Nanoscale and Nature Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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