U. Södervall

1.9k total citations
89 papers, 1.5k citations indexed

About

U. Södervall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, U. Södervall has authored 89 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in U. Södervall's work include Semiconductor materials and interfaces (26 papers), Semiconductor materials and devices (25 papers) and Ion-surface interactions and analysis (19 papers). U. Södervall is often cited by papers focused on Semiconductor materials and interfaces (26 papers), Semiconductor materials and devices (25 papers) and Ion-surface interactions and analysis (19 papers). U. Södervall collaborates with scholars based in Sweden, Germany and Belgium. U. Södervall's co-authors include St. Frank, H.‐E. Schaefer, Chr. Herzig, Sergiy V. Divinski, Roland Würschum, U. Broßmann, Ch. Herzig, Gregor Knöner, N. A. Stolwijk and K. Reimann and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Physical Review Letters and Nano Letters.

In The Last Decade

U. Södervall

89 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
U. Södervall Sweden 22 610 571 413 406 318 89 1.5k
Shigeta Hara Japan 30 1.2k 2.0× 638 1.1× 411 1.0× 1.0k 2.5× 286 0.9× 133 2.6k
P. Wynblatt United States 26 1.2k 2.0× 303 0.5× 515 1.2× 690 1.7× 280 0.9× 71 2.1k
T. Sekine Japan 11 804 1.3× 710 1.2× 509 1.2× 309 0.8× 213 0.7× 24 1.8k
E.Y. Jiang China 20 754 1.2× 264 0.5× 272 0.7× 307 0.8× 130 0.4× 46 1.3k
J. Woltersdorf Germany 26 1.0k 1.7× 336 0.6× 467 1.1× 731 1.8× 152 0.5× 87 2.0k
Baixin Liu China 20 939 1.5× 546 1.0× 147 0.4× 525 1.3× 165 0.5× 123 1.5k
A. Bittar New Zealand 19 554 0.9× 376 0.7× 159 0.4× 173 0.4× 186 0.6× 61 1.2k
M. Grant Norton United States 25 1.4k 2.3× 724 1.3× 191 0.5× 303 0.7× 316 1.0× 108 2.1k
S. Basu India 21 711 1.2× 411 0.7× 332 0.8× 245 0.6× 149 0.5× 105 1.4k
T. Vystavěl Netherlands 17 499 0.8× 234 0.4× 218 0.5× 319 0.8× 201 0.6× 79 1.0k

Countries citing papers authored by U. Södervall

Since Specialization
Citations

This map shows the geographic impact of U. Södervall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Södervall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Södervall more than expected).

Fields of papers citing papers by U. Södervall

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Södervall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Södervall. The network helps show where U. Södervall may publish in the future.

Co-authorship network of co-authors of U. Södervall

This figure shows the co-authorship network connecting the top 25 collaborators of U. Södervall. A scholar is included among the top collaborators of U. Södervall based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Södervall. U. Södervall is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Bing, et al.. (2015). Attempt of the metallic 3D printing technology for millimeter-wave antenna implementations. 2015 Asia-Pacific Microwave Conference (APMC). 1–3. 34 indexed citations
2.
Passi, Vikram, U. Södervall, B. Nilsson, et al.. (2012). Anisotropic vapor HF etching of silicon dioxide for Si microstructure release. Microelectronic Engineering. 95. 83–89. 10 indexed citations
3.
Vlad, Alexandru, et al.. (2011). Technological and Material Related Challenges for Large Area, High Aspect-Ratio, Near Teradot/Inch<SUP>2</SUP> Areal Density and Three-Dimensional Structuring of Polyaniline. Journal of Nanoscience and Nanotechnology. 11(10). 8924–8935. 1 indexed citations
4.
Kalem, Ş., P. Werner, Mats Hagberg, et al.. (2011). Microscopic Si whiskers. Microelectronic Engineering. 88(8). 2593–2596. 2 indexed citations
5.
Kalem, Ş., P. Werner, B. Nilsson, et al.. (2009). Controlled thinning and surface smoothening of silicon nanopillars. Nanotechnology. 20(44). 445303–445303. 13 indexed citations
6.
Södervall, U., et al.. (2006). Thin Film Transfer for the Fabrication of Multiple Gate MOS Transistors. ECS Transactions. 3(6). 47–58. 1 indexed citations
7.
Wennerberg, Ann, Ari Ide‐Ektessabi, Takashi Sawase, et al.. (2004). Titanium release from implants prepared with different surface roughness. Clinical Oral Implants Research. 15(5). 505–512. 94 indexed citations
8.
Krause‐Rehberg, R., et al.. (2004). Observation of Vacancies during Zn Diffusion in GaP. Materials science forum. 445-446. 26–30. 1 indexed citations
9.
Stolwijk, N. A., et al.. (2003). Diffusion of nitrogen in gallium arsenide. Physica B Condensed Matter. 340-342. 367–370. 7 indexed citations
10.
Andersson, Thomas, U. Södervall, C. Jäger, et al.. (2001). Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy. MRS Proceedings. 693. 1 indexed citations
11.
Stolwijk, N. A., et al.. (2001). Diffusion of zinc in gallium phosphide under defect-free phosphorus-rich conditions. Physica B Condensed Matter. 308-310. 895–898. 8 indexed citations
12.
Mattsson, Johan, James A. Forrest, Anatol Krozer, et al.. (2000). Characterisation of sub micron salt-doped polymer electrolyte films. Electrochimica Acta. 45(8-9). 1453–1461. 13 indexed citations
13.
Mamutin, V. V., S. V. Sorokin, V. N. Jmerik, et al.. (1999). Plasma-assisted MBE growth of GaN and InGaN on different substrates. Journal of Crystal Growth. 201-202. 346–350. 4 indexed citations
14.
Łojkowski, Witold, et al.. (1998). The Effect of Pressure on Indium Diffusion along 〈001〉 Tilt Grain Boundaries in Copper Bicrystals. Interface Science. 6(3). 187–196. 8 indexed citations
15.
Grey, F., et al.. (1998). Ultraclean Si/Si Interface Formation by Surface Preparation and Direct Bonding in Ultrahigh Vacuum. Journal of The Electrochemical Society. 145(5). 1645–1649. 5 indexed citations
16.
Stolwijk, N. A., et al.. (1998). Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials. Physical Review Letters. 81(16). 3443–3446. 41 indexed citations
17.
Friesel, M., U. Södervall, & W. Gust. (1995). Diffusion of tin in germanium studied by secondary ion mass spectrometry. Journal of Applied Physics. 78(9). 5351–5355. 24 indexed citations
18.
Stolwijk, N. A., et al.. (1995). Use of zinc diffusion into GaAs for determining properties of gallium interstitials. Physical review. B, Condensed matter. 52(16). 11927–11931. 30 indexed citations
19.
Larsson, Anders, Björn Jönsson, O. Sjölund, et al.. (1993). Carrier lifetimes in periodically δ-doped MQW structures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1985. 478–478. 1 indexed citations
20.
Södervall, U., A. Lodding, & H. Odelius. (1988). Solid‐state diffusion and point defect studies evaluated by SIMS. Surface and Interface Analysis. 11(10). 529–532. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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