J. R. Söderström

1.8k citations

26 papers · 1.4k indexed · 1 hit paper · h-index 15

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 5%
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Terahertz technology and applications
- Photonic and Optical Devices

Papers in ⓘ

Atomic and Molecular Physics, and Optics 26
- Semiconductor Quantum Structures and Devices 26
- Quantum and electron transport phenomena 7
Electrical and Electronic Engineering 25
- Advanced Semiconductor Detectors and Materials 16
- Semiconductor Lasers and Optical Devices 9
- Advancements in Semiconductor Devices and Circuit Design 9
- Photonic and Optical Devices 3

Co-authors: T. C. McGill (18 shared papers)D. H. Chow (15 shared papers)L.J. Mahoney (2 shared papers)E. R. Brown (2 shared papers)C. D. Parker (2 shared papers)K.M. Molvar (1 shared paper)T. G. Andersson (3 shared papers)Jiyong Yao (3 shared papers)
Journals: Applied Physics Letters (9 papers)Superlattices and Microstructures (3 papers)Journal of Applied Physics (3 papers)IEEE Electron Device Letters (2 papers)Physical review. B, Condensed matter (2 papers)
Partner nations: United States Sweden Russia

In The Last Decade

J. R. Söderström

26 papers receiving 1.4k citations

Hit Papers

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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes 1991 · 622 citations

Peers

Countries citing papers authored by J. R. Söderström

Since Specialization

Citations

This map shows the geographic impact of J. R. Söderström's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. R. Söderström with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. R. Söderström more than expected).

Fields of papers citing papers by J. R. Söderström

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. R. Söderström. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. R. Söderström. The network helps show where J. R. Söderström may publish in the future.

Co-authors

The 25 scholars most cited alongside J. R. Söderström, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. R. Söderström Line = papers co-authored together J. R. Söderström links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes Applied Physics Letters ·E. R. Brown, J. R. Söderström, C. D. Parker, L.J. Mahoney, K.M. Molvar, T. C. McGill Hit paper breakdown →	1991	622
2	New negative differential resistance device based on resonant interband tunneling Applied Physics Letters ·J. R. Söderström, D. H. Chow, T. C. McGill	1989	199
3	Growth and characterization of InAs/Ga1−xInxSb strained-layer superlattices Applied Physics Letters ·D. H. Chow, R. H. Miles, J. R. Söderström, T. C. McGill	1990	69
4	Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes Applied Physics Letters ·J. R. Söderström, E. R. Brown, C. D. Parker, L.J. Mahoney, Jiyong Yao, T. G. Andersson, T. C. McGill	1991	60
5	Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates Semiconductor Science and Technology ·J. R. Söderström, M. M. Cumming, Jiyong Yao, Thomas Andersson	1992	60
6	A multiple-state memory cell based on the resonant tunneling diode IEEE Electron Device Letters ·J. R. Söderström, T. G. Andersson	1988	50
7	Two-band modeling of narrow band gap and interband tunneling devices Journal of Applied Physics ·J. R. Söderström, Edward T. Yu, M.K. Jackson, Y. Rajakarunanayake, T. C. McGill	1990	45
8	Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe Applied Physics Letters ·Y. Rajakarunanayake, B. H. Cole, J. O. McCaldin, D. H. Chow, J. R. Söderström, T. C. McGill, Callum M. S. Jones	1989	44
9	InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devices IEEE Electron Device Letters ·J. R. Söderström, D. H. Chow, T. C. McGill	1990	39
10	Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures Applied Physics Letters ·J. R. Söderström, D. H. Chow, T. C. McGill	1989	37
11	Experimental observation of negative differential resistance from an InAs/GaSb interface Applied Physics Letters ·D. A. Collins, Edward T. Yu, Y. Rajakarunanayake, J. R. Söderström, David Z. Ting, D. H. Chow, T. C. McGill	1990	35
12	InAs/Ga1−xInxSb strained-layer superlattices grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·D. H. Chow, R. H. Miles, J. R. Söderström, T. C. McGill	1990	27
13	Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures Journal of Applied Physics ·J. R. Söderström, D. H. Chow, T. C. McGill	1989	23
14	Observation of resonant tunneling in InSb/AlInSb double-barrier structures Applied Physics Letters ·J. R. Söderström, Jiyong Yao, Thomas Andersson	1991	20
15	A Millimeter Wave Quantum Well Diode Oscillator Hans Grönqvist, Anders Rydberg, Hans Hjelmgren, Herbert Zirath, E. Kollberg, J. R. Söderström, Tove Andersson	1988	16
16	resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height Superlattices and Microstructures ·J. R. Söderström, Thorwald G. Andersson	1989	14
17	Large peak-to-valley current ratios in triple barrier heterostructures Solid-State Electronics ·D. A. Collins, D. H. Chow, David Z. Ting, Edward T. Yu, J. R. Söderström, T. C. McGill	1989	12
18	Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates MRS Proceedings ·J. R. Söderström, D. H. Chow, T. C. McGill, Thomas J. Watson	1989	9
19	Effect of theXpoint on the escape of electrons from the quantum well of a double-barrier heterostructure Physical review. B, Condensed matter ·M.K. Jackson, David Z. Ting, D. H. Chow, D. A. Collins, J. R. Söderström, T. C. McGill	1991	8
20	Electron tunneling through single-barrier heterostructures in a magnetic field Physical review. B, Condensed matter ·Yu. V. Dubrovskiĭ, Yu. N. Khanin, I. A. Larkin, С. В. Морозов, Thomas Andersson, J. R. Söderström	1994	8

About J. R. Söderström

J. R. Söderström is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Spectroscopy and Control and Systems Engineering, having authored 26 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (26 papers), Advanced Semiconductor Detectors and Materials (16 papers), Semiconductor Lasers and Optical Devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Quantum and electron transport phenomena (7 papers), Photonic and Optical Devices (3 papers), Machine Learning in Materials Science (2 papers) and GaN-based semiconductor devices and materials (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.2k citations), Electrical and Electronic Engineering (1.2k citations), Spectroscopy (139 citations), Astronomy and Astrophysics (124 citations) and Condensed Matter Physics (83 citations). J. R. Söderström has collaborated with scholars based in United States, Sweden and Russia. Frequent co-authors include T. C. McGill, D. H. Chow, L.J. Mahoney, E. R. Brown, C. D. Parker, K.M. Molvar, T. G. Andersson, Jiyong Yao, Thomas Andersson and Y. Rajakarunanayake. Their work appears in journals such as Applied Physics Letters, Superlattices and Microstructures, Journal of Applied Physics, IEEE Electron Device Letters and Physical review. B, Condensed matter.

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