J. R. Söderström

1.8k total citations · 1 hit paper
26 papers, 1.4k citations indexed

About

J. R. Söderström is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, J. R. Söderström has authored 26 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 3 papers in Condensed Matter Physics. Recurrent topics in J. R. Söderström's work include Semiconductor Quantum Structures and Devices (26 papers), Advanced Semiconductor Detectors and Materials (16 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). J. R. Söderström is often cited by papers focused on Semiconductor Quantum Structures and Devices (26 papers), Advanced Semiconductor Detectors and Materials (16 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). J. R. Söderström collaborates with scholars based in United States, Sweden and Russia. J. R. Söderström's co-authors include T. C. McGill, D. H. Chow, C. D. Parker, E. R. Brown, L.J. Mahoney, K.M. Molvar, T. G. Andersson, Jiyong Yao, Thomas Andersson and Y. Rajakarunanayake and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. R. Söderström

26 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

1991 622 citations E. R. Brown, J. R. Söderström et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. R. Söderström United States	15	1.2k	1.2k	215	139	124	26	1.4k
A. E. Zhukov Russia	20	1.3k 1.1×	1.2k 1.0×	288 1.3×	124 0.9×	99 0.8×	64	1.5k
J.F. Palmier France	21	1.2k 1.0×	796 0.7×	169 0.8×	87 0.6×	49 0.4×	93	1.4k
S. Bollaert France	22	1.3k 1.1×	1.5k 1.3×	130 0.6×	81 0.6×	331 2.7×	99	1.8k
F. Tauser Germany	9	877 0.7×	817 0.7×	108 0.5×	283 2.0×	92 0.7×	17	1.1k
T. M. Kerr United Kingdom	16	841 0.7×	635 0.5×	148 0.7×	41 0.3×	68 0.5×	56	948
S. L. Chuang United States	22	1.4k 1.2×	999 0.8×	191 0.9×	208 1.5×	38 0.3×	56	1.6k
A.Y. Cho United States	18	956 0.8×	1.0k 0.9×	84 0.4×	161 1.2×	18 0.1×	68	1.3k
А. В. Антонов Russia	17	471 0.4×	511 0.4×	156 0.7×	132 0.9×	40 0.3×	88	708
Yozo Shimada Japan	13	438 0.4×	463 0.4×	131 0.6×	118 0.8×	47 0.4×	55	609
C. J. G. M. Langerak United Kingdom	20	1.1k 0.9×	672 0.6×	226 1.1×	221 1.6×	16 0.1×	63	1.2k

Countries citing papers authored by J. R. Söderström

Since Specialization

Citations

This map shows the geographic impact of J. R. Söderström's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. R. Söderström with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. R. Söderström more than expected).

Fields of papers citing papers by J. R. Söderström

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. R. Söderström. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. R. Söderström. The network helps show where J. R. Söderström may publish in the future.

Co-authorship network of co-authors of J. R. Söderström

This figure shows the co-authorship network connecting the top 25 collaborators of J. R. Söderström. A scholar is included among the top collaborators of J. R. Söderström based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. R. Söderström. J. R. Söderström is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Brown, E. R., J. R. Söderström, C. D. Parker, et al.. (1991). Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes. Applied Physics Letters. 58(20). 2291–2293. 622 indexed citations breakdown →

Söderström, J. R., E. R. Brown, C. D. Parker, et al.. (1991). Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes. Applied Physics Letters. 58(3). 275–277. 60 indexed citations

Söderström, J. R., Jiyong Yao, & Thomas Andersson. (1991). Observation of resonant tunneling in InSb/AlInSb double-barrier structures. Applied Physics Letters. 58(7). 708–710. 20 indexed citations

Collins, D. A., David Z. Ting, Edward T. Yu, et al.. (1991). Interband tunneling in InAs/GaSb/AlSb heterostructures. Journal of Crystal Growth. 111(1-4). 664–668. 5 indexed citations

Collins, D. A., D. H. Chow, David Z. Ting, et al.. (1990). Evidence for coherent interaction between quantum well states in triple barrier heterostructures. Superlattices and Microstructures. 8(4). 455–458. 1 indexed citations

Chow, D. H., R. H. Miles, J. R. Söderström, & T. C. McGill. (1990). Growth and characterization of InAs/Ga1−xInxSb strained-layer superlattices. Applied Physics Letters. 56(15). 1418–1420. 69 indexed citations

Chow, D. H., et al.. (1990). InAs/Ga1−xInxSb strained-layer superlattices grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(4). 710–714. 27 indexed citations

Söderström, J. R., Edward T. Yu, M.K. Jackson, Y. Rajakarunanayake, & T. C. McGill. (1990). Two-band modeling of narrow band gap and interband tunneling devices. Journal of Applied Physics. 68(3). 1372–1375. 45 indexed citations

Söderström, J. R., D. H. Chow, & T. C. McGill. (1990). InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devices. IEEE Electron Device Letters. 11(1). 27–29. 39 indexed citations

10.

Chow, D. H., Edward T. Yu, J. R. Söderström, David Z. Ting, & T. C. McGill. (1990). Negative differential resistance due to resonant interband tunneling of holes. Journal of Applied Physics. 68(7). 3744–3746. 5 indexed citations

11.

Collins, D. A., Edward T. Yu, Y. Rajakarunanayake, et al.. (1990). Experimental observation of negative differential resistance from an InAs/GaSb interface. Applied Physics Letters. 57(7). 683–685. 35 indexed citations

12.

Ting, David Z., M.K. Jackson, D. H. Chow, et al.. (1989). X-point tunneling in AlAs/GaAs double barrier heterostructures. Solid-State Electronics. 32(12). 1513–1517. 3 indexed citations

13.

Rajakarunanayake, Y., J. O. McCaldin, D. H. Chow, et al.. (1989). Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe. Applied Physics Letters. 55(12). 1217–1219. 44 indexed citations

14.

Söderström, J. R., D. H. Chow, & T. C. McGill. (1989). Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures. Journal of Applied Physics. 66(10). 5106–5108. 23 indexed citations

15.

Söderström, J. R., D. H. Chow, & T. C. McGill. (1989). Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures. Applied Physics Letters. 55(13). 1348–1350. 37 indexed citations

16.

Söderström, J. R., et al.. (1989). resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height. Superlattices and Microstructures. 5(1). 109–113. 14 indexed citations

17.

Collins, D. A., D. H. Chow, David Z. Ting, et al.. (1989). Large peak-to-valley current ratios in triple barrier heterostructures. Solid-State Electronics. 32(12). 1095–1099. 12 indexed citations

18.

Söderström, J. R. & T. G. Andersson. (1988). A multiple-state memory cell based on the resonant tunneling diode. IEEE Electron Device Letters. 9(5). 200–202. 50 indexed citations

19.

Grönqvist, Hans, Anders Rydberg, Hans Hjelmgren, et al.. (1988). A Millimeter Wave Quantum Well Diode Oscillator. 8. 370–375. 16 indexed citations

20.

Söderström, J. R., et al.. (1987). Resonant tunneling in double barrier structures with GaAs and (InGa)As quantum wells. Superlattices and Microstructures. 3(3). 283–285. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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