Shinsuke Harada

3.3k citations

178 papers · 2.5k · h-index 27

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Thin-Film Transistor Technologies
Ceramics and Composites top 5%

Papers in

Electrical and Electronic Engineering 173
- Silicon Carbide Semiconductor Technologies 162
- Semiconductor materials and devices 136
- Advancements in Semiconductor Devices and Circuit Design 65
- Thin-Film Transistor Technologies 15
- Electromagnetic Compatibility and Noise Suppression 15
- Silicon and Solar Cell Technologies 14
Atomic and Molecular Physics, and Optics 23
- Semiconductor materials and interfaces 23

Co-authors: Mitsuru Sometani (39 shared papers)Hiroshi Yano (37 shared papers)Kenji Fukuda (40 shared papers)Ryoji Kosugi (20 shared papers)Hajime Okumura (36 shared papers)Junji Senzaki (32 shared papers)Dai Okamoto (16 shared papers)Tetsuo Hatakeyama (23 shared papers)
Journals: Japanese Journal of Applied Physics (18 papers)Applied Physics Letters (13 papers)IEEE Electron Device Letters (8 papers)Journal of Applied Physics (8 papers)Materials science forum (52 papers)
Partner nations: Japan United States Poland

In The Last Decade

Shinsuke Harada

167 papers receiving 2.4k citations

Peers

Countries citing papers authored by Shinsuke Harada

Since Specialization

Citations

This map shows the geographic impact of Shinsuke Harada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shinsuke Harada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shinsuke Harada more than expected).

Fields of papers citing papers by Shinsuke Harada

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shinsuke Harada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shinsuke Harada. The network helps show where Shinsuke Harada may publish in the future.

Co-authors

The 25 scholars most cited alongside Shinsuke Harada, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Shinsuke Harada Line = papers co-authored together Shinsuke Harada links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 178 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization of traps at nitrided SiO₂/SiC interfaces near the conduction band edge by using Hall effect measurements Applied Physics Express ·Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa, Hajime Okumura	2017	110
2	Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation IEEE Electron Device Letters ·Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Yoshiyuki Yonezawa, Hiroshi Yano	2014	107
3	Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face IEEE Electron Device Letters ·Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada, Ryoji Kosugi, S. Suzuki, Takaya Suzuki, Kenji Fukuda	2002	87
4	Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor Journal of Applied Physics ·Shinsuke Harada, Ryoji Kosugi, Junji Senzaki, Won-Ju Cho, Kenji Fukuda, Kazuo Arai, Seiji Suzuki	2002	68
5	3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field IEEE Electron Device Letters ·Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi, Takahito Kojima, Junji Senzaki, Yasunori Tanaka, Hajime Okumura	2016	64
6	Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS Yusuke Kobayashi, Naoyuki Ohse, Tadao Morimoto, Makoto Katō, Takahito Kojima, Masaki Miyazato, Manabu Takei, Hiroshi Kimura, Shinsuke Harada	2017	63
7	First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method Shinsuke Harada, Yusuke Kobayashi, Shinya Kyogoku, Takahiro Morimoto, Tomoyuki Tanaka, Masahiro Takei, Hajime Okumura	2018	58
8	Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC Journal of Applied Physics ·Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, S. Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura	2015	52
9	High channel mobility in normally-off 4H-SiC buried channel MOSFETs IEEE Electron Device Letters ·Shinsuke Harada, S. Suzuki, Junji Senzaki, Ryoji Kosugi, K. Adachi, Kenji Fukuda, Kazuo Arai	2001	50
10	1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage Materials science forum ·Shinsuke Harada, Yusuke Kobayashi, Akimasa Kinoshita, Naoyuki Ohse, (unknown), Masanobu Iwaya, Hiromu Shiomi, Hidenori Kitai, Shinya Kyogoku, Keiko Ariyoshi, Yasuhiko Ōnishi, Hiroshi Kimura	2017	48
11	Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy Applied Physics Letters ·T. Umeda, G.-W. Kim, Takafumi Okuda, Mitsuru Sometani, Tsunenobu Kimoto, Shinsuke Harada	2018	46
12	Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors Journal of Applied Physics ·Seiji Suzuki, Shinsuke Harada, Ryoji Kosugi, Junji Senzaki, Won-Ju Cho, Kenji Fukuda	2002	45
13	Determination of optimum structure of 4H-SiC Trench MOSFET Shinsuke Harada, Makoto Katō, Takahito Kojima, Keiko Ariyoshi, Yasunori Tanaka, Hajime Okumura	2012	43
14	Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing IEEE Electron Device Letters ·Ryoji Kosugi, S. Suzuki, Mitsuo Okamoto, Shinsuke Harada, Junji Senzaki, Kenji Fukuda	2002	41
15	Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET Masakazu Baba, Takeshi Tawara, Tadao Morimoto, Shinsuke Harada, Manabu Takei, Hiroshi Kimura	2021	39
16	Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS Ruito Aiba, Masataka Okawa, Taiga Kanamori, Hiroshi Yano, Noriyuki Iwamuro, Yusuke Kobayashi, Shinsuke Harada	2019	39
17	First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer Mitsuo Okamoto, Atsushi Yao, Hiroshi Sato, Shinsuke Harada	2021	36
18	Homogeneous Amorphization in High-Energy Ion Implanted Si Physical Review Letters ·Teruaki Motooka, Shinsuke Harada, Manabu Ishimaru	1997	35
19	Evaluation of Schottky barrier height on 4H-SiC m-face $\{ 1\bar{1}00\} $ for Schottky barrier diode wall integrated trench MOSFET Japanese Journal of Applied Physics ·Yusuke Kobayashi, Hiroshi Ishimori, Akimasa Kinoshita, Takahito Kojima, Manabu Takei, Hiroshi Kimura, Shinsuke Harada	2017	33
20	Recrystallization of MeV Si implanted 6H-SiC Applied Physics Letters ·Shinsuke Harada, Manabu Ishimaru, Teruaki Motooka, Toshitake Nakata, Tomoaki Yoneda, Morio Inoue	1996	31

About Shinsuke Harada

Shinsuke Harada is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Materials Chemistry, having authored 178 papers that have together received 2.5k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (162 papers), Semiconductor materials and devices (136 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers), Semiconductor materials and interfaces (23 papers), Copper Interconnects and Reliability (19 papers), Thin-Film Transistor Technologies (15 papers), Electromagnetic Compatibility and Noise Suppression (15 papers) and Silicon and Solar Cell Technologies (14 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.3k citations), Ceramics and Composites (134 citations), Electronic, Optical and Magnetic Materials (290 citations), Atomic and Molecular Physics, and Optics (361 citations) and Condensed Matter Physics (100 citations). Shinsuke Harada has collaborated with scholars based in Japan, United States and Poland. Frequent co-authors include Mitsuru Sometani, Hiroshi Yano, Kenji Fukuda, Ryoji Kosugi, Hajime Okumura, Junji Senzaki, Dai Okamoto, Tetsuo Hatakeyama, Yoshiyuki Yonezawa and Mitsuo Okamoto. Their work appears in journals such as Japanese Journal of Applied Physics, Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics and Materials science forum.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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