Shinsuke Harada

3.2k total citations
175 papers, 2.4k citations indexed

About

Shinsuke Harada is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shinsuke Harada has authored 175 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 170 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shinsuke Harada's work include Silicon Carbide Semiconductor Technologies (160 papers), Semiconductor materials and devices (133 papers) and Advancements in Semiconductor Devices and Circuit Design (65 papers). Shinsuke Harada is often cited by papers focused on Silicon Carbide Semiconductor Technologies (160 papers), Semiconductor materials and devices (133 papers) and Advancements in Semiconductor Devices and Circuit Design (65 papers). Shinsuke Harada collaborates with scholars based in Japan, United States and Poland. Shinsuke Harada's co-authors include Mitsuru Sometani, Hiroshi Yano, Kenji Fukuda, Ryoji Kosugi, Junji Senzaki, Hajime Okumura, Dai Okamoto, Yoshiyuki Yonezawa, Tetsuo Hatakeyama and Yusuke Kobayashi and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shinsuke Harada

165 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shinsuke Harada Japan 27 2.2k 354 285 208 133 175 2.4k
Byoung‐Ho Cheong South Korea 14 620 0.3× 310 0.9× 146 0.5× 488 2.3× 74 0.6× 41 919
Yimen Zhang China 17 1.3k 0.6× 410 1.2× 379 1.3× 476 2.3× 27 0.2× 258 1.6k
Yiheng Rao China 18 609 0.3× 217 0.6× 407 1.4× 505 2.4× 65 0.5× 64 857
K. Rubin United States 13 496 0.2× 353 1.0× 271 1.0× 620 3.0× 91 0.7× 36 929
Jenn‐Gwo Hwu Taiwan 18 1.3k 0.6× 288 0.8× 104 0.4× 350 1.7× 39 0.3× 218 1.4k
B. Jacobs Netherlands 13 491 0.2× 299 0.8× 244 0.9× 523 2.5× 76 0.6× 38 825
Anupama Yadav United States 15 383 0.2× 184 0.5× 141 0.5× 232 1.1× 105 0.8× 43 628
M. Gomi Japan 16 536 0.2× 310 0.9× 268 0.9× 353 1.7× 23 0.2× 64 809
S. Dueñas Spain 19 1.3k 0.6× 305 0.9× 135 0.5× 498 2.4× 16 0.1× 146 1.4k
Sufi Zafar United States 29 2.5k 1.1× 315 0.9× 224 0.8× 936 4.5× 35 0.3× 68 2.8k

Countries citing papers authored by Shinsuke Harada

Since Specialization
Citations

This map shows the geographic impact of Shinsuke Harada's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shinsuke Harada with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shinsuke Harada more than expected).

Fields of papers citing papers by Shinsuke Harada

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shinsuke Harada. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shinsuke Harada. The network helps show where Shinsuke Harada may publish in the future.

Co-authorship network of co-authors of Shinsuke Harada

This figure shows the co-authorship network connecting the top 25 collaborators of Shinsuke Harada. A scholar is included among the top collaborators of Shinsuke Harada based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shinsuke Harada. Shinsuke Harada is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kojima, Kazutoshi, Akira Nakajima, Hisashi Yamada, & Shinsuke Harada. (2025). Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices. Materials Science in Semiconductor Processing. 198. 109767–109767. 1 indexed citations
2.
Iijima, Ryosuke, et al.. (2024). Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 358. 89–95.
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Hatakeyama, Tetsuo, et al.. (2022). Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 131(14). 8 indexed citations
6.
Baba, Masakazu, et al.. (2021). Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET. 83–86. 37 indexed citations
7.
Umeda, T., Y. Nakano, Takafumi Okuda, et al.. (2020). Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics. 127(14). 24 indexed citations
8.
Hatakeyama, Tetsuo, Mitsuru Sometani, Mitsuo Okamoto, et al.. (2020). Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering. Applied Physics Letters. 117(4). 19 indexed citations
9.
Saitoh, Y., et al.. (2019). V-groove trench gate SiC MOSFET with a double reduced surface field junction termination extensions structure. Japanese Journal of Applied Physics. 58(SB). SBBD11–SBBD11. 7 indexed citations
10.
Fu, Wei, et al.. (2019). Investigation of stress at SiO 2 /4H-SiC interface induced by thermal oxidation by confocal Raman microscopy. Japanese Journal of Applied Physics. 58(SB). SBBD03–SBBD03. 3 indexed citations
11.
Sometani, Mitsuru, Takuji Hosoi, Tetsuo Hatakeyama, et al.. (2019). Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations. Applied Physics Letters. 115(13). 29 indexed citations
12.
Hatakeyama, Tetsuo, Mitsuru Sometani, Shinsuke Harada, et al.. (2019). Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities. Applied Physics Express. 12(2). 21003–21003. 25 indexed citations
13.
MASUDA, Takuro, et al.. (2018). <tex>$0.63\ \mathrm{m}\Omega \text{cm}^{2}$</tex> / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET. 8.1.1–8.1.4. 17 indexed citations
14.
Zhang, Xufang, Dai Okamoto, Mitsuru Sometani, et al.. (2018). Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors. Japanese Journal of Applied Physics. 57(6S3). 06KA06–06KA06. 7 indexed citations
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Kobayashi, Yusuke, Shinsuke Harada, Mitsuru Sometani, et al.. (2016). 3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation. Materials science forum. 858. 974–977. 11 indexed citations
17.
Harada, Shinsuke, Junji Senzaki, Yusuke Kobayashi, et al.. (2015). Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces. Materials science forum. 821-823. 721–724. 4 indexed citations
18.
Harada, Shinsuke, Makoto Katō, Yusuke Kobayashi, et al.. (2015). Low R<sub>ons</sub> in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region. Materials science forum. 821-823. 769–772. 3 indexed citations
19.
Harada, Shinsuke, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, & Kazuo Arai. (2007). 4.3 m.OMEGA.cm2, 1100 V normally-off IEMOSFET on SiC. IEEJ Transactions on Industry Applications. 127(3). 267–272. 1 indexed citations
20.
Harada, Shinsuke. (1971). Ga-No Conversion and Idiolectal Variations in Japanese. 1971(60). 25–38. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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