Swaroop Ganguly

2.7k total citations · 1 hit paper
156 papers, 2.1k citations indexed

About

Swaroop Ganguly is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Swaroop Ganguly has authored 156 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Electrical and Electronic Engineering, 76 papers in Condensed Matter Physics and 55 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Swaroop Ganguly's work include GaN-based semiconductor devices and materials (75 papers), Semiconductor materials and devices (63 papers) and Ga2O3 and related materials (45 papers). Swaroop Ganguly is often cited by papers focused on GaN-based semiconductor devices and materials (75 papers), Semiconductor materials and devices (63 papers) and Ga2O3 and related materials (45 papers). Swaroop Ganguly collaborates with scholars based in India, United States and Saudi Arabia. Swaroop Ganguly's co-authors include Dipankar Saha, Suresh Gundapaneni, Anil Kottantharayil, Udayan Ganguly, Apurba Laha, Mudassar Meer, Saurabh Lodha, Debashree Banerjee, Boddepalli SanthiBhushan and Mohammad Asif Hussain and has published in prestigious journals such as Angewandte Chemie International Edition, Nano Letters and Applied Physics Letters.

In The Last Decade

Swaroop Ganguly

146 papers receiving 1.9k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

An overview of fractal antenna engineering research

2003 833 citations Swaroop Ganguly et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
Swaroop Ganguly	1.4k	767	526	401	349	156	2.1k
Ruimin Xu	1.7k 1.3×	399 0.5×	752 1.4×	381 1.0×	422 1.2×	192	2.2k
Yuehang Xu	1.7k 1.2×	331 0.4×	874 1.7×	254 0.6×	414 1.2×	206	2.0k
Zhiqun Cheng	1.6k 1.2×	492 0.6×	546 1.0×	399 1.0×	121 0.3×	194	2.0k
Grahame Faulkner	1.9k 1.4×	215 0.3×	376 0.7×	280 0.7×	182 0.5×	31	2.2k
Shawn S. H. Hsu	2.1k 1.5×	130 0.2×	617 1.2×	291 0.7×	338 1.0×	184	2.3k
K. B. Bhasin	692 0.5×	421 0.5×	201 0.4×	115 0.3×	226 0.6×	154	1.3k
Shixiong Liang	1.4k 1.0×	441 0.6×	274 0.5×	1.6k 3.9×	390 1.1×	135	2.6k
I. B. Vendik	1.1k 0.8×	841 1.1×	155 0.3×	452 1.1×	285 0.8×	182	1.7k
Heung‐Sik Tae	1.1k 0.8×	198 0.3×	115 0.2×	264 0.7×	163 0.5×	214	1.6k
C. V. Brown	732 0.5×	190 0.2×	91 0.2×	595 1.5×	383 1.1×	97	1.7k

Countries citing papers authored by Swaroop Ganguly

Since Specialization

Citations

This map shows the geographic impact of Swaroop Ganguly's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Swaroop Ganguly with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Swaroop Ganguly more than expected).

Fields of papers citing papers by Swaroop Ganguly

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Swaroop Ganguly. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Swaroop Ganguly. The network helps show where Swaroop Ganguly may publish in the future.

Co-authorship network of co-authors of Swaroop Ganguly

This figure shows the co-authorship network connecting the top 25 collaborators of Swaroop Ganguly. A scholar is included among the top collaborators of Swaroop Ganguly based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Swaroop Ganguly. Swaroop Ganguly is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mishra, Vikash, et al.. (2025). Engineering the electronic structure of TiO2 by transition-metal doping: A first-principles DFT study. Journal of Applied Physics. 138(12).

Rai, Padmnabh, et al.. (2024). P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors. Applied Physics Letters. 125(25).

Laha, Apurba, et al.. (2023). Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors. Journal of Applied Physics. 134(24). 2 indexed citations

Ganguly, Swaroop, et al.. (2022). Discrete Molecular Copper(II) Complex for Efficient Piezoelectric Energy Harvesting Above Room‐Temperature. Angewandte Chemie International Edition. 62(9). 17 indexed citations

Ganguly, Swaroop, et al.. (2022). Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiN_x as Gate Dielectric and Surface Passivation. physica status solidi (a). 219(24). 3 indexed citations

Lemettinen, Jori, Sami Suihkonen, H. J. Osten, et al.. (2021). Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I _ON/I _OFF Operating at 473 K. IEEE Transactions on Electron Devices. 68(6). 2653–2660. 11 indexed citations

Chen, Yifan, et al.. (2021). Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime. ACS Photonics. 8(3). 926–932. 13 indexed citations

Ganguly, Swaroop, et al.. (2021). Determining the carrier decay kinetics in QCSE-exhibiting materials: An accurate interpretation of transient absorption spectroscopy data. 1–1. 1 indexed citations

Lodha, Saurabh, et al.. (2021). Fully/partially suspended gate SiC-based FET for power applications. 1–4. 3 indexed citations

10.

Ganguly, Swaroop, et al.. (2021). An analytical model for electron tunneling in triangular quantum wells. Semiconductor Science and Technology. 36(5). 55012–55012. 7 indexed citations

11.

Ganguly, Swaroop, et al.. (2020). Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime. Nanotechnology. 31(49). 495705–495705. 12 indexed citations

12.

Lodha, Saurabh, et al.. (2020). Effect of interface trap distribution on SiC-based power MOS device and circuit characteristics. 45–48. 6 indexed citations

13.

Ganguly, Swaroop, et al.. (2019). Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core–shell nanostructures. Nanotechnology. 30(27). 274002–274002. 10 indexed citations

14.

Mukherjee, Sudipta, et al.. (2019). Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures. Japanese Journal of Applied Physics. 58(9). 94001–94001. 6 indexed citations

15.

Ganguly, Swaroop, et al.. (2019). Impact of distributed Bragg reflector on carrier and photon dynamics in GaN-based surface emitting diodes manifested by ultrafast transient absorption spectroscopy. Japanese Journal of Applied Physics. 58(SC). SCCC15–SCCC15. 6 indexed citations

16.

Ganguly, Swaroop, et al.. (2019). Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs. Journal of the Optical Society of America B. 36(3). 616–616. 9 indexed citations

17.

Ganguly, Swaroop, et al.. (2019). Realization of high quality silicon nitride deposition at low temperatures. Journal of Applied Physics. 126(11). 29 indexed citations

18.

Gupta, K. Das, Dipankar Saha, Swaroop Ganguly, et al.. (2019). Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application. Applied Physics Letters. 115(6). 14 indexed citations

19.

Meer, Mudassar, et al.. (2019). Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO₂ as a Dielectric. IEEE Transactions on Electron Devices. 66(6). 2557–2562. 22 indexed citations

20.

Ganguly, Swaroop, et al.. (2018). Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet treatment. Nanotechnology. 30(10). 104001–104001. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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