S. B. Hyder

471 total citations
28 papers, 363 citations indexed

About

S. B. Hyder is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, S. B. Hyder has authored 28 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 14 papers in Electrical and Electronic Engineering and 14 papers in Biomedical Engineering. Recurrent topics in S. B. Hyder's work include Photocathodes and Microchannel Plates (12 papers), Semiconductor Quantum Structures and Devices (12 papers) and Electron and X-Ray Spectroscopy Techniques (8 papers). S. B. Hyder is often cited by papers focused on Photocathodes and Microchannel Plates (12 papers), Semiconductor Quantum Structures and Devices (12 papers) and Electron and X-Ray Spectroscopy Techniques (8 papers). S. B. Hyder collaborates with scholars based in United States, United Kingdom and Ireland. S. B. Hyder's co-authors include J. S. Escher, P. E. Gregory, R. R. Saxena, T. O. Yep, S. Bandy, G. A. Antypas, C. Nishimoto, H. Morkoç̌, Y.M. Houng and Timothy J. Maloney and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. B. Hyder

28 papers receiving 321 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. B. Hyder United States 12 257 210 92 86 36 28 363
Z. Liliental United States 8 411 1.6× 192 0.9× 124 1.3× 83 1.0× 50 1.4× 17 525
Y. Takeishi Japan 10 421 1.6× 255 1.2× 111 1.2× 73 0.8× 113 3.1× 26 605
A. M. Mazzone Italy 11 333 1.3× 211 1.0× 99 1.1× 34 0.4× 21 0.6× 77 472
R. W. Streater Canada 12 250 1.0× 250 1.2× 105 1.1× 78 0.9× 42 1.2× 31 359
Karuppanan Sekar India 11 282 1.1× 224 1.1× 204 2.2× 83 1.0× 36 1.0× 40 478
J. Edgecumbe United States 11 218 0.8× 168 0.8× 36 0.4× 183 2.1× 58 1.6× 25 382
S. M. Mokler United Kingdom 14 345 1.3× 273 1.3× 154 1.7× 50 0.6× 101 2.8× 32 476
A.M. Keir United Kingdom 11 244 0.9× 202 1.0× 126 1.4× 62 0.7× 20 0.6× 30 353
A. Mazuelas Germany 11 181 0.7× 220 1.0× 118 1.3× 83 1.0× 14 0.4× 53 350
J. Klatt United States 12 403 1.6× 293 1.4× 181 2.0× 53 0.6× 21 0.6× 30 511

Countries citing papers authored by S. B. Hyder

Since Specialization
Citations

This map shows the geographic impact of S. B. Hyder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. B. Hyder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. B. Hyder more than expected).

Fields of papers citing papers by S. B. Hyder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. B. Hyder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. B. Hyder. The network helps show where S. B. Hyder may publish in the future.

Co-authorship network of co-authors of S. B. Hyder

This figure shows the co-authorship network connecting the top 25 collaborators of S. B. Hyder. A scholar is included among the top collaborators of S. B. Hyder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. B. Hyder. S. B. Hyder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hyder, S. B.. (1981). Vapor phase epitaxial growth of InP-based compound semiconductor materials. Journal of Crystal Growth. 54(1). 109–116. 20 indexed citations
2.
Bandy, S., et al.. (1981). Saturation velocity determination for In0.53Ga0.47As field-effect transistors. Applied Physics Letters. 38(10). 817–819. 52 indexed citations
3.
Escher, J. S., P. E. Gregory, S. B. Hyder, R. R. Saxena, & R. L. Bell. (1981). Photoelectric imaging in the 0.9-1.6 micron range. IEEE Electron Device Letters. 2(5). 123–125. 5 indexed citations
4.
Escher, J. S., R. L. Bell, P. E. Gregory, et al.. (1980). Field-assisted semiconductor photoemitters for the 1—2-µm range. IEEE Transactions on Electron Devices. 27(7). 1244–1250. 14 indexed citations
5.
Gregory, P. E., J. S. Escher, R. R. Saxena, & S. B. Hyder. (1980). Field-assisted photoemission to 2.1 microns from a Ag/p-In0.77Ga0.23As photocathode. Applied Physics Letters. 36(8). 639–640. 22 indexed citations
6.
Maloney, Timothy J., M G Burt, J. S. Escher, et al.. (1980). Quantum efficiency of InP field-assisted photocathodes. Journal of Applied Physics. 51(5). 2879–2883. 14 indexed citations
7.
Saxena, R. R., S. B. Hyder, P. E. Gregory, & J. S. Escher. (1980). VPE Growth of InGaP / InGaAs Structures for Transferred‐Electron Photocathodes. Journal of The Electrochemical Society. 127(3). 733–737. 10 indexed citations
8.
Saxena, R. R., S. B. Hyder, P. E. Gregory, & J. S. Escher. (1980). Vapor phase epitaxial growth of InGaAs/InAsP heterojunctions for long wavelength transferred electron photocathodes. Journal of Crystal Growth. 50(2). 481–484. 7 indexed citations
9.
Hyder, S. B., et al.. (1979). Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application. Applied Physics Letters. 35(10). 787–789. 26 indexed citations
10.
Sankaran, R. Mohan, S. B. Hyder, & S. Bandy. (1979). Selective In Situ Vapor Etch and Growth of GaAs. Journal of The Electrochemical Society. 126(7). 1241–1247. 3 indexed citations
11.
Morkoç̌, H., J. T. Andrews, & S. B. Hyder. (1979). Effects of an n-layer under the gate on the performance of InP MESFET's. IEEE Transactions on Electron Devices. 26(3). 238–241. 2 indexed citations
12.
Hyder, S. B., et al.. (1979). Vapor-phase epitaxial growth of quaternary In1−xGaxAsyP1−y in the 0.75–1.35-eV band-gap range. Applied Physics Letters. 34(9). 584–586. 14 indexed citations
13.
Morkoç̌, H., et al.. (1978). Substrate dependence of InP m.e.s.f.e.t. performance. Electronics Letters. 14(22). 715–716. 21 indexed citations
14.
Antypas, G. A., Y.M. Houng, S. B. Hyder, J. S. Escher, & P. E. Gregory. (1978). The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B and (100) InP substrates. Applied Physics Letters. 33(5). 463–465. 9 indexed citations
15.
Escher, J. S., P. E. Gregory, S. B. Hyder, Y.M. Houng, & G. A. Antypas. (1977). Bias-assisted photoemission in the 1-2 micron range. 460–464. 1 indexed citations
16.
Hyder, S. B., G. A. Antypas, J. S. Escher, & P. E. Gregory. (1977). Liquid-phase-epitaxial growth of lattice-matched In0.53Ga0.47As on (100) -oriented InP. Applied Physics Letters. 31(9). 551–553. 17 indexed citations
17.
Hyder, S. B.. (1977). Trapping effects in silver-doped mercuric iodide crystals. Journal of Applied Physics. 48(1). 313–319. 24 indexed citations
18.
Hyder, S. B.. (1971). Thin Film GaAs Photocathodes Deposited on Single Crystal Sapphire by a Modified rf Sputtering Technique. Journal of Vacuum Science and Technology. 8(1). 228–232. 6 indexed citations
19.
Hyder, S. B., et al.. (1956). Limits to some (n,np) cross-sections at 14.5 MeV neutron energy. Nuclear Physics. 1(8). 278–280. 1 indexed citations
20.
Hyder, S. B., et al.. (1956). Limits to some (n,np) cross-sections at 14.5 MeV neutron energy. Nuclear Physics. 1(4). 278–280. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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