R. R. Saxena

534 total citations
19 papers, 387 citations indexed

About

R. R. Saxena is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, R. R. Saxena has authored 19 papers receiving a total of 387 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 4 papers in Surfaces, Coatings and Films. Recurrent topics in R. R. Saxena's work include Semiconductor Quantum Structures and Devices (11 papers), Advanced Semiconductor Detectors and Materials (8 papers) and solar cell performance optimization (4 papers). R. R. Saxena is often cited by papers focused on Semiconductor Quantum Structures and Devices (11 papers), Advanced Semiconductor Detectors and Materials (8 papers) and solar cell performance optimization (4 papers). R. R. Saxena collaborates with scholars based in United States and Ireland. R. R. Saxena's co-authors include C. B. Cooper, M. J. Ludowise, Robert H. Bragg, S. B. Hyder, R. L. Moon, J.E. Fouquet, P. E. Gregory, J. S. Escher, Verle W. Aebi and P. Borden and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. R. Saxena

19 papers receiving 361 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. R. Saxena United States 11 292 253 124 58 28 19 387
T.J. Zamerowski United States 12 366 1.3× 352 1.4× 80 0.6× 67 1.2× 37 1.3× 18 454
A. Savage United States 7 292 1.0× 308 1.2× 153 1.2× 42 0.7× 33 1.2× 8 412
Marian A. Herman Poland 6 177 0.6× 166 0.7× 185 1.5× 58 1.0× 50 1.8× 10 349
G. W. Anderson Canada 12 160 0.5× 282 1.1× 108 0.9× 45 0.8× 26 0.9× 18 352
A. G. Thompson United States 8 289 1.0× 336 1.3× 156 1.3× 36 0.6× 72 2.6× 11 469
Bob Wilson 2 455 1.6× 455 1.8× 109 0.9× 38 0.7× 76 2.7× 4 570
R. W. Streater Canada 12 250 0.9× 250 1.0× 105 0.8× 78 1.3× 37 1.3× 31 359
M. G. Mier United States 8 247 0.8× 244 1.0× 71 0.6× 29 0.5× 73 2.6× 22 342
M. Baudet France 12 337 1.2× 463 1.8× 151 1.2× 37 0.6× 57 2.0× 25 526
A. Mazuelas Germany 11 181 0.6× 220 0.9× 118 1.0× 83 1.4× 63 2.3× 53 350

Countries citing papers authored by R. R. Saxena

Since Specialization
Citations

This map shows the geographic impact of R. R. Saxena's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. R. Saxena with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. R. Saxena more than expected).

Fields of papers citing papers by R. R. Saxena

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. R. Saxena. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. R. Saxena. The network helps show where R. R. Saxena may publish in the future.

Co-authorship network of co-authors of R. R. Saxena

This figure shows the co-authorship network connecting the top 25 collaborators of R. R. Saxena. A scholar is included among the top collaborators of R. R. Saxena based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. R. Saxena. R. R. Saxena is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Fouquet, J.E., R. R. Saxena, & G. A. Patterson. (1989). Near-infrared photoluminescence of high-resistivity epitaxial GaAs and InP and of epitaxial GaAs on Si. IEEE Journal of Quantum Electronics. 25(5). 1025–1034. 9 indexed citations
2.
Saxena, R. R., et al.. (1988). High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine. Applied Physics Letters. 53(4). 304–306. 45 indexed citations
3.
Cooper, C. B., R. R. Saxena, & M. J. Ludowise. (1982). The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony. Journal of Electronic Materials. 11(6). 1001–1010. 51 indexed citations
4.
Gregory, P. E., P. Borden, M. J. Ludowise, C. B. Cooper, & R. R. Saxena. (1981). Performance and durability of AlGaAs/GaAs concentrator cells. Photovoltaic Specialists Conference. 147–150. 3 indexed citations
5.
Aebi, Verle W., C. B. Cooper, R. L. Moon, & R. R. Saxena. (1981). Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications. Journal of Crystal Growth. 55(3). 517–525. 28 indexed citations
6.
Escher, J. S., P. E. Gregory, S. B. Hyder, R. R. Saxena, & R. L. Bell. (1981). Photoelectric imaging in the 0.9-1.6 micron range. IEEE Electron Device Letters. 2(5). 123–125. 5 indexed citations
7.
Saxena, R. R., et al.. (1981). Studies of GaAs and AlGaAs layers grown by OM-VPE. Journal of Crystal Growth. 55(1). 58–63. 28 indexed citations
8.
Ludowise, M. J., C. B. Cooper, & R. R. Saxena. (1981). The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE. Journal of Electronic Materials. 10(6). 1051–1068. 50 indexed citations
9.
Saxena, R. R., Verle W. Aebi, C. B. Cooper, et al.. (1980). High-efficiency AlGaAs/GaAs concentrator solar cells by organometallic vapor phase epitaxy. Journal of Applied Physics. 51(8). 4501–4503. 10 indexed citations
10.
Borden, P., et al.. (1980). <title>Solar cell development at Varian</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 248. 119–124. 1 indexed citations
11.
Gregory, P. E., J. S. Escher, R. R. Saxena, & S. B. Hyder. (1980). Field-assisted photoemission to 2.1 microns from a Ag/p-In0.77Ga0.23As photocathode. Applied Physics Letters. 36(8). 639–640. 22 indexed citations
12.
Saxena, R. R., S. B. Hyder, P. E. Gregory, & J. S. Escher. (1980). VPE Growth of InGaP / InGaAs Structures for Transferred‐Electron Photocathodes. Journal of The Electrochemical Society. 127(3). 733–737. 10 indexed citations
13.
Cooper, C. B., R. R. Saxena, & M. J. Ludowise. (1980). O.M. v.p.e. growth of AlGaSb and AlGaAsSb. Electronics Letters. 16(23). 892–893. 19 indexed citations
14.
Saxena, R. R., S. B. Hyder, P. E. Gregory, & J. S. Escher. (1980). Vapor phase epitaxial growth of InGaAs/InAsP heterojunctions for long wavelength transferred electron photocathodes. Journal of Crystal Growth. 50(2). 481–484. 7 indexed citations
15.
Hyder, S. B., et al.. (1979). Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application. Applied Physics Letters. 35(10). 787–789. 26 indexed citations
16.
Hyder, S. B., et al.. (1979). Vapor-phase epitaxial growth of quaternary In1−xGaxAsyP1−y in the 0.75–1.35-eV band-gap range. Applied Physics Letters. 34(9). 584–586. 14 indexed citations
17.
Saxena, R. R. & Robert H. Bragg. (1978). Electrical conduction in glassy carbon. Journal of Non-Crystalline Solids. 28(1). 45–60. 33 indexed citations
18.
Saxena, R. R. & Robert H. Bragg. (1978). Kinetics of graphitization in glassy carbon. Carbon. 16(5). 373–376. 21 indexed citations
19.
Saxena, R. R. & Robert H. Bragg. (1974). K-emission from glassy carbon. Carbon. 12(2). 210–212. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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