S. M. Mokler

527 total citations
32 papers, 476 citations indexed

About

S. M. Mokler is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. M. Mokler has authored 32 papers receiving a total of 476 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. M. Mokler's work include Semiconductor materials and devices (21 papers), Silicon Nanostructures and Photoluminescence (11 papers) and Electron and X-Ray Spectroscopy Techniques (10 papers). S. M. Mokler is often cited by papers focused on Semiconductor materials and devices (21 papers), Silicon Nanostructures and Photoluminescence (11 papers) and Electron and X-Ray Spectroscopy Techniques (10 papers). S. M. Mokler collaborates with scholars based in United Kingdom and United States. S. M. Mokler's co-authors include Noboru Ohtani, B.A. Joyce, B.A. Joyce, P.R. Watson, Jianping Zhang, Mingyu Xie, Christine Cardinal Roberts, L. Ungier, John R. Arthur and J.F. Fernández and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry.

In The Last Decade

S. M. Mokler

31 papers receiving 453 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. M. Mokler United Kingdom 14 345 273 154 101 55 32 476
L. S. O. Johansson Sweden 13 237 0.7× 362 1.3× 132 0.9× 146 1.4× 67 1.2× 22 496
Keung L. Luke United States 12 416 1.2× 302 1.1× 119 0.8× 102 1.0× 22 0.4× 27 527
Itsuo Katayama Japan 11 195 0.6× 320 1.2× 126 0.8× 167 1.7× 94 1.7× 31 454
F. Proix France 15 274 0.8× 381 1.4× 149 1.0× 214 2.1× 46 0.8× 31 548
T.L. van Rooy Netherlands 8 230 0.7× 399 1.5× 126 0.8× 188 1.9× 29 0.5× 8 499
Toshihiro Ichikawa Japan 13 226 0.7× 475 1.7× 150 1.0× 181 1.8× 28 0.5× 25 601
L. Smit Netherlands 11 139 0.4× 267 1.0× 156 1.0× 121 1.2× 64 1.2× 16 399
D. Kilday United States 12 275 0.8× 341 1.2× 121 0.8× 189 1.9× 22 0.4× 34 474
Z. Liliental United States 8 411 1.2× 192 0.7× 124 0.8× 50 0.5× 26 0.5× 17 525
K. Werner Netherlands 13 424 1.2× 308 1.1× 131 0.9× 57 0.6× 24 0.4× 36 509

Countries citing papers authored by S. M. Mokler

Since Specialization
Citations

This map shows the geographic impact of S. M. Mokler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. M. Mokler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. M. Mokler more than expected).

Fields of papers citing papers by S. M. Mokler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. M. Mokler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. M. Mokler. The network helps show where S. M. Mokler may publish in the future.

Co-authorship network of co-authors of S. M. Mokler

This figure shows the co-authorship network connecting the top 25 collaborators of S. M. Mokler. A scholar is included among the top collaborators of S. M. Mokler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. M. Mokler. S. M. Mokler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xie, Mingyu, et al.. (1995). Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy. Materials Science and Technology. 11(4). 396–399. 6 indexed citations
2.
Ohtani, Noboru, et al.. (1994). Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 33(4S). 2311–2311. 15 indexed citations
3.
Xie, Mingyu, et al.. (1994). Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy. Applied Physics Letters. 65(24). 3066–3068. 4 indexed citations
4.
Zhang, Jian, E C Lightowlers, Nadia Anwar, et al.. (1994). Growth and characterization of Si1−xGex/Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 12(4). 1139–1141. 20 indexed citations
5.
Mokler, S. M., Noboru Ohtani, Mingyu Xie, Jianping Zhang, & B.A. Joyce. (1993). Surface studies during growth of Si1−xGex/Si from gaseous Si and Ge hydrides. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 1073–1076. 6 indexed citations
6.
Mokler, S. M., Noboru Ohtani, Mingyu Xie, Xinwei Zhang, & B.A. Joyce. (1993). Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4. Journal of Crystal Growth. 127(1-4). 467–471. 8 indexed citations
7.
Mokler, S. M., et al.. (1992). A reflection high-energy electron diffraction study of Si surfaces during gas source MBE growth from disilane. Applied Surface Science. 60-61. 92–98. 6 indexed citations
8.
Mokler, S. M., P.R. Watson, L. Ungier, & John R. Arthur. (1992). Adsorption and thermal desorption of chlorine from GaAs(100) surfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(6). 2371–2377. 30 indexed citations
9.
Mokler, S. M., et al.. (1992). In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGex alloys on Si(100) surfaces. Applied Physics Letters. 61(21). 2548–2550. 23 indexed citations
10.
Mokler, S. M., et al.. (1992). Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilane. Applied Physics Letters. 60(18). 2255–2257. 17 indexed citations
11.
Mokler, S. M., Noboru Ohtani, Jianping Zhang, & B.A. Joyce. (1992). Growth anisotropy observed on Si(001) surfaces during Si-GSMBE using disilane. Surface Science. 275(3). 401–406. 25 indexed citations
12.
Mokler, S. M., et al.. (1992). A reflection high-energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy. Journal of Applied Physics. 71(10). 5168–5172. 2 indexed citations
13.
Mokler, S. M., et al.. (1992). RHEED studies of the growth of Si(001) by gas source MBE from disilane. Journal of Crystal Growth. 120(1-4). 290–295. 13 indexed citations
14.
Mokler, S. M., et al.. (1992). Reflection high-energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beams. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 1846–1855. 13 indexed citations
15.
Mokler, S. M., et al.. (1991). Surface reconstructions of Si(001) observed using reflection-high- energy-electron diffraction during molecular-beam epitaxial growth from disilane. Applied Physics Letters. 59(26). 3419–3421. 25 indexed citations
16.
Mokler, S. M. & P.R. Watson. (1991). New mass spectrometric data to aid etching and growth studies of GaAs using As and Ga trichlorides. Vacuum. 42(18). 1187–1189. 6 indexed citations
17.
Mokler, S. M., P.R. Watson, L. Ungier, & John R. Arthur. (1990). Electron-stimulated desorption of chlorine from GaAs(100) surfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(5). 1109–1112. 17 indexed citations
18.
Mokler, S. M. & P.R. Watson. (1989). Unusual electron beam effects in the GaAs (100)/Cl2 system. Solid State Communications. 70(4). 415–417. 13 indexed citations
19.
Watson, P.R., et al.. (1988). Titanium surface chemistry: Chlorine adsorption. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 671–674. 4 indexed citations
20.
Watson, P.R. & S. M. Mokler. (1987). Adsorption and reaction of chlorine with the titanium(0001) surface. The Journal of Physical Chemistry. 91(22). 5705–5709. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by L. S. O. Johansson Breakdown of academic impact, for papers by Keung L. Luke Breakdown of academic impact, for papers by Itsuo Katayama Breakdown of academic impact, for papers by F. Proix Breakdown of academic impact, for papers by T.L. van Rooy Breakdown of academic impact, for papers by Toshihiro Ichikawa Breakdown of academic impact, for papers by L. Smit Breakdown of academic impact, for papers by D. Kilday Breakdown of academic impact, for papers by Z. Liliental Breakdown of academic impact, for papers by K. Werner
Rankless by CCL
2026