C. Nishimoto

572 total citations
31 papers, 390 citations indexed

About

C. Nishimoto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C. Nishimoto has authored 31 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in C. Nishimoto's work include Semiconductor Quantum Structures and Devices (25 papers), Radio Frequency Integrated Circuit Design (23 papers) and Semiconductor Lasers and Optical Devices (8 papers). C. Nishimoto is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Radio Frequency Integrated Circuit Design (23 papers) and Semiconductor Lasers and Optical Devices (8 papers). C. Nishimoto collaborates with scholars based in United States and India. C. Nishimoto's co-authors include S. Bandy, Y.C. Pao, G. Zdasiuk, R. Majidi-Ahy, M. Riaziat, M. Glenn, Shou‐Hsien Weng, S. B. Hyder, Nina Bechtel and J. S. Harris and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

C. Nishimoto

31 papers receiving 344 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Nishimoto United States	12	374	261	54	42	22	31	390
J. Gering United States	11	287 0.8×	163 0.6×	35 0.6×	47 1.1×	9 0.4×	26	311
M. Tutt United States	11	380 1.0×	179 0.7×	43 0.8×	49 1.2×	18 0.8×	42	402
J.R. Velebir United States	15	494 1.3×	330 1.3×	52 1.0×	78 1.9×	54 2.5×	35	514
A.A. Jabra United States	8	446 1.2×	326 1.2×	18 0.3×	63 1.5×	27 1.2×	17	467
Shou‐Hsien Weng Taiwan	12	392 1.0×	162 0.6×	59 1.1×	63 1.5×	40 1.8×	40	433
M. Hirayama Japan	12	330 0.9×	125 0.5×	33 0.6×	30 0.7×	11 0.5×	37	349
D. Gasquet France	9	305 0.8×	153 0.6×	32 0.6×	21 0.5×	24 1.1×	28	349
Y. Mitsui Japan	12	390 1.0×	134 0.5×	23 0.4×	56 1.3×	13 0.6×	50	401
D.K. Umemoto United States	14	601 1.6×	281 1.1×	127 2.4×	99 2.4×	19 0.9×	51	618
R.M. Dia United States	14	560 1.5×	359 1.4×	31 0.6×	111 2.6×	80 3.6×	24	578

Countries citing papers authored by C. Nishimoto

Since Specialization

Citations

This map shows the geographic impact of C. Nishimoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Nishimoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Nishimoto more than expected).

Fields of papers citing papers by C. Nishimoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Nishimoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Nishimoto. The network helps show where C. Nishimoto may publish in the future.

Co-authorship network of co-authors of C. Nishimoto

This figure shows the co-authorship network connecting the top 25 collaborators of C. Nishimoto. A scholar is included among the top collaborators of C. Nishimoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Nishimoto. C. Nishimoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nishimoto, C., et al.. (2003). A monolithic Ka-band HEMT low-noise amplifier. 6. 247–250. 3 indexed citations

Majidi-Ahy, R., C. Nishimoto, M. Riaziat, et al.. (2002). 100 GHz high-gain InP MMIC cascode amplifier. 173–176. 14 indexed citations

Nishimoto, C., et al.. (2002). High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz. 23–26. 11 indexed citations

Fink, R., et al.. (2000). Field emission carbon thin film and its lifetime and stability. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(2). 968–971. 4 indexed citations

Majidi-Ahy, R., C. Nishimoto, S. Bandy, et al.. (1992). 4–40 GHz MMIC distributed active combiner with 3 dB gain. Electronics Letters. 28(8). 739–741. 18 indexed citations

Majidi-Ahy, R., C. Nishimoto, M. Riaziat, et al.. (1991). 100-GHz high-gain InP MMIC cascode amplifier. IEEE Journal of Solid-State Circuits. 26(10). 1370–1378. 11 indexed citations

Majidi-Ahy, R., C. Nishimoto, M. Riaziat, et al.. (1990). 5-100 GHz InP coplanar waveguide MMIC distributed amplifier. IEEE Transactions on Microwave Theory and Techniques. 38(12). 1986–1993. 73 indexed citations

Nishimoto, C., et al.. (1990). High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz. IEEE Transactions on Microwave Theory and Techniques. 38(12). 2016–2017. 10 indexed citations

Pao, Y.C., et al.. (1990). Impact of surface layer on In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors. IEEE Electron Device Letters. 11(7). 312–314. 23 indexed citations

10.

Majidi-Ahy, R., S. Bandy, M. Glenn, et al.. (1990). InP-based nonlinearly-optimized transconductance field-effect transistor (NOTFET). 26. 92–95. 2 indexed citations

11.

Pao, Y.C., et al.. (1990). Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors. IEEE Transactions on Electron Devices. 37(10). 2165–2170. 29 indexed citations

12.

Majidi-Ahy, R., S. Bandy, M. Glenn, et al.. (1990). NOTFET: a high-frequency InP nonlinear transistor. IEEE Electron Device Letters. 11(12). 582–584. 3 indexed citations

13.

Riaziat, M., Y.C. Pao, C. Nishimoto, et al.. (1989). HEMT millimetre wave monolithic amplifier on InP. Electronics Letters. 25(20). 1328–1329. 9 indexed citations

14.

Nishimoto, C., et al.. (1988). A monolithic Ka-band HEMT low-noise amplifier. IEEE Transactions on Microwave Theory and Techniques. 36(12). 1930–1937. 6 indexed citations

15.

Bandy, S., et al.. (1987). A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier. IEEE Transactions on Microwave Theory and Techniques. 35(12). 1494–1500. 20 indexed citations

16.

Aebi, Verle W., S. Bandy, C. Nishimoto, & G. Zdasiuk. (1984). Low-noise microwave field-effect transistors using organometallic GaAs. Applied Physics Letters. 44(11). 1056–1058. 4 indexed citations

17.

Bandy, S., et al.. (1983). Submicron GaAs microwave FET's with low parasitic gate and source resistances. IEEE Electron Device Letters. 4(2). 42–44. 11 indexed citations

18.

Bandy, S., et al.. (1981). Saturation velocity determination for In0.53Ga0.47As field-effect transistors. Applied Physics Letters. 38(10). 817–819. 52 indexed citations

19.

Bandy, S., et al.. (1979). Submicron FET's using molecular beam epitaxy. Defense Technical Information Center (DTIC). 2 indexed citations

20.

Fairman, Robert, et al.. (1975). Microwave InGaAs Schottky-barrier-gate field-effect transistors - Preliminary results. 305–314. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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