Y. Takeishi

749 total citations
26 papers, 605 citations indexed

About

Y. Takeishi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, Y. Takeishi has authored 26 papers receiving a total of 605 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 10 papers in Surfaces, Coatings and Films. Recurrent topics in Y. Takeishi's work include Electron and X-Ray Spectroscopy Techniques (10 papers), Semiconductor materials and devices (10 papers) and Ion-surface interactions and analysis (5 papers). Y. Takeishi is often cited by papers focused on Electron and X-Ray Spectroscopy Techniques (10 papers), Semiconductor materials and devices (10 papers) and Ion-surface interactions and analysis (5 papers). Y. Takeishi collaborates with scholars based in Japan and United States. Y. Takeishi's co-authors include Tai Satô, Hisashi Hara, Yoshihiko Okamoto, H. D. Hagstrum, Kanji Hirabayashi, K. Ohuchi, G. E. Becker, H. Iizuka, T. Satô and Hajime Maeda and has published in prestigious journals such as Applied Physics Letters, Surface Science and Japanese Journal of Applied Physics.

In The Last Decade

Y. Takeishi

26 papers receiving 530 citations

Peers

Y. Takeishi

EEE

AMPO

SCF

MC

CM

David B. Wittry United States

S. Ingrey Canada

F. Proix France

P. Sassaroli Italy

I. Ladany United States

L. Ledebo Sweden

T.L. van Rooy Netherlands

L. W. Aukerman United States

G. Grossmann Sweden

M. A. A. Pudensi United States

David B. Wittry United States

Y. Takeishi

308 ×0.7

EEE

206 ×0.8

AMPO

191 ×1.7

SCF

123 ×1.1

MC

44 ×0.5

CM

Citations per year, relative to Y. Takeishi Y. Takeishi (= 1×) peers David B. Wittry

Countries citing papers authored by Y. Takeishi

Since Specialization

Citations

This map shows the geographic impact of Y. Takeishi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Takeishi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Takeishi more than expected).

Fields of papers citing papers by Y. Takeishi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Takeishi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Takeishi. The network helps show where Y. Takeishi may publish in the future.

Co-authorship network of co-authors of Y. Takeishi

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Takeishi. A scholar is included among the top collaborators of Y. Takeishi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Takeishi. Y. Takeishi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Takeishi, Y., et al.. (1978). Electron Beam Lithography in Practical Use for Integrated Circuits. 1 indexed citations

2.

Iizuka, H., Toshinori Sato, K. Ohuchi, et al.. (1972). Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory. 8 indexed citations

3.

Takeishi, Y., T. Satô, Hajime Maeda, & Kanji Hirabayashi. (1972). Effects of Surface Orientation on Transport Properties of Electrons and Holes on Oxidized Silicon Surfaces. Journal of Vacuum Science and Technology. 9(2). 769–769. 4 indexed citations

4.

Sato, Tsutomu, et al.. (1972). "A fully-decoded 2048-bit avalanche-injection type, electrically alterable ROM". 4–5. 2 indexed citations

5.

Satô, Tai, et al.. (1971). Drift-Velocity Saturation of Holes in Si Inversion Layers. Journal of the Physical Society of Japan. 31(6). 1846–1846. 27 indexed citations

6.

Takeishi, Y., Hisashi Hara, Toshinori Sato, K. Ohuchi, & H. Tango. (1971). The channel-conductance increase of conventional MOS transistors by avalanche injection: Application to read-only memory. 104–106. 1 indexed citations

7.

Hara, Hiroyuki, K. Ohuchi, Toshinori Sato, et al.. (1971). Avalanche-Injection MOS Read-Only-Memory. 2 indexed citations

8.

Takeishi, Y., et al.. (1970). Electrical Properties of Metal-GaAs Schottky Barrier Contacts. Japanese Journal of Applied Physics. 9(5). 458–458. 9 indexed citations

9.

Takeishi, Y., et al.. (1968). Characteristic Properties of Si {311} Surfaces. Japanese Journal of Applied Physics. 7(6). 679–679. 3 indexed citations

10.

Takeishi, Y., et al.. (1967). A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF THE EPITAXIAL SILICON LAYERS ON A Ge(111) SURFACE. Applied Physics Letters. 11(10). 330–332. 9 indexed citations

11.

Hirabayashi, Kanji & Y. Takeishi. (1966). Diffraction of low-energy electrons at crystal surfaces. Surface Science. 4(2). 150–160. 36 indexed citations

12.

Takeishi, Y., et al.. (1966). An ordered structure on a tantalum-adsorbed Si(111) surface. Surface Science. 4(3). 317–319. 7 indexed citations

13.

Hagstrum, H. D., et al.. (1965). Focused Slow Ion Beam for Study of Electron Ejection from Solids. Review of Scientific Instruments. 36(8). 1183–1191. 11 indexed citations

14.

Takeishi, Y. & H. D. Hagstrum. (1965). Auger-Type Electron Ejection from the (111) Face of Nickel by SlowHe+,Ne+, andAr+Ions. Physical Review. 137(2A). A641–A647. 27 indexed citations

15.

Hagstrum, H. D. & Y. Takeishi. (1965). Effect of Electron-Electron Interaction on the Kinetic-Energy Distribution of Electrons Ejected from Solids by Slow Ions. Physical Review. 137(1A). A304–A310. 10 indexed citations

16.

Takeishi, Y. & H. D. Hagstrum. (1965). Effect of structural reconstruction of Ge(111) and Ge(100) surfaces on Auger-type electron ejection by slow ions. Surface Science. 3(2). 175–188. 8 indexed citations

17.

Hagstrum, H. D., et al.. (1964). Electronic levels in surface structures produced in oxygenation. Surface Science. 2. 26–32. 9 indexed citations

18.

Takeishi, Y.. (1958). On the Auger Ejection of Electrons from Nickel by Inert Gas Ions. Journal of the Physical Society of Japan. 13(7). 766–766. 5 indexed citations

19.

Takeishi, Y.. (1956). Auger Ejection of Electrons from Barium Oxide by Inert Gas Ions and the Cathode Fall in the Normal Glow Discharges. Journal of the Physical Society of Japan. 11(6). 676–689. 11 indexed citations

20.

Kozima, Kunio, et al.. (1954). The Molecular Structure of cis-1,2-Dichlorocyclohexane. Bulletin of the Chemical Society of Japan. 27(5). 287–290. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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