J. Klatt

612 total citations
30 papers, 511 citations indexed

About

J. Klatt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Klatt has authored 30 papers receiving a total of 511 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in J. Klatt's work include Semiconductor materials and devices (18 papers), Semiconductor Quantum Structures and Devices (13 papers) and Ion-surface interactions and analysis (9 papers). J. Klatt is often cited by papers focused on Semiconductor materials and devices (18 papers), Semiconductor Quantum Structures and Devices (13 papers) and Ion-surface interactions and analysis (9 papers). J. Klatt collaborates with scholars based in United States, Germany and Japan. J. Klatt's co-authors include H. J. Osten, G. Lippert, E. Bugiel, B. Dietrich, R. S. Averback, J. J. Coleman, David Peak, Shinji Higuchi, David V. Forbes and R. P. Bryan and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Klatt

28 papers receiving 488 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Klatt United States 12 403 293 181 99 53 30 511
Karuppanan Sekar India 11 282 0.7× 224 0.8× 204 1.1× 95 1.0× 83 1.6× 40 478
S. Yu. Shiryaev Denmark 13 475 1.2× 429 1.5× 219 1.2× 108 1.1× 115 2.2× 41 633
Л. И. Федина Russia 11 299 0.7× 216 0.7× 214 1.2× 72 0.7× 76 1.4× 61 436
A. Gerhardt Germany 12 361 0.9× 234 0.8× 176 1.0× 76 0.8× 47 0.9× 27 462
J. P. Gowers United Kingdom 16 594 1.5× 332 1.1× 297 1.6× 105 1.1× 106 2.0× 29 723
H.P. Zeindl Germany 12 283 0.7× 231 0.8× 144 0.8× 61 0.6× 38 0.7× 33 387
B.W. Straughan United Kingdom 12 325 0.8× 275 0.9× 185 1.0× 53 0.5× 52 1.0× 17 465
E. Nygren United States 15 449 1.1× 186 0.6× 320 1.8× 157 1.6× 78 1.5× 27 623
P. D. Augustus United Kingdom 14 315 0.8× 273 0.9× 135 0.7× 56 0.6× 36 0.7× 27 450
S. M. Mokler United Kingdom 14 345 0.9× 273 0.9× 154 0.9× 55 0.6× 50 0.9× 32 476

Countries citing papers authored by J. Klatt

Since Specialization
Citations

This map shows the geographic impact of J. Klatt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Klatt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Klatt more than expected).

Fields of papers citing papers by J. Klatt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Klatt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Klatt. The network helps show where J. Klatt may publish in the future.

Co-authorship network of co-authors of J. Klatt

This figure shows the co-authorship network connecting the top 25 collaborators of J. Klatt. A scholar is included among the top collaborators of J. Klatt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Klatt. J. Klatt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Klatt, J., et al.. (2010). D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors. Surface and Interface Analysis. 43(1-2). 609–611. 1 indexed citations
2.
Ziger, David H., et al.. (2002). Silicide-related yield enhancement in a deep submicrometer CMOS process. 14. 287–290.
3.
Zeindl, H.P., S. Nilsson, U. Jagdhold, et al.. (1996). Influence of interdiffusion and surfactants on Si/SiGe heterointerfaces. Applied Surface Science. 102. 107–111. 1 indexed citations
4.
Forbes, David V., J. J. Coleman, J. Klatt, & R. S. Averback. (1995). Temperature dependence of ion-beam mixing in III–V semiconductors. Journal of Applied Physics. 77(7). 3543–3545. 10 indexed citations
5.
Zeindl, H.P., S. Nilsson, J. Klatt, D. Krüger, & R. Kurps. (1995). Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations. Journal of Crystal Growth. 157(1-4). 31–35. 10 indexed citations
6.
Nilsson, S., H.P. Zeindl, D. Krüger, J. Klatt, & R. Kurps. (1995). Surfactant-Mediated Growth of SiGe/Si Quantum-Well Structures Studied by Photoluminescence Technique and Secondary Ion Mass Spectrometry. MRS Proceedings. 399. 1 indexed citations
7.
Klatt, J., D. Krüger, E. Bugiel, & H. J. Osten. (1994). Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant. Applied Physics Letters. 64(3). 360–362. 11 indexed citations
8.
9.
Robertson, I.M., et al.. (1993). Radiation-induced segregation behavior in random and ordered face-centered cubic materials. Journal of Nuclear Materials. 205. 312–316. 1 indexed citations
10.
Coleman, J. J., et al.. (1993). Temperature Dependence of Ion Beam Mixing of Ingaas Marker Layers in GaAs. MRS Proceedings. 311. 1 indexed citations
11.
Klatt, J., R. S. Averback, David V. Forbes, & J. J. Coleman. (1993). Interfacial damage in ion-irradiated GaAs/AlAs superlattices. Physical review. B, Condensed matter. 48(23). 17629–17632. 17 indexed citations
12.
Osten, H. J., J. Klatt, G. Lippert, & E. Bugiel. (1993). Surfactant-mediated growth of germanium on Si(100) by MBE and SPE. Journal of Crystal Growth. 127(1-4). 396–400. 16 indexed citations
13.
Osten, H. J., J. Klatt, G. Lippert, B. Dietrich, & E. Bugiel. (1992). Surfactant-controlled solid phase epitaxy of germanium on silicon. Physical Review Letters. 69(3). 450–453. 78 indexed citations
14.
Osten, H. J., G. Lippert, & J. Klatt. (1992). The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(3). 1151–1155. 40 indexed citations
15.
Osten, H. J., E. Bugiel, & J. Klatt. (1992). Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). Applied Physics Letters. 61(16). 1918–1920. 31 indexed citations
16.
Osten, H. J., et al.. (1992). Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. Applied Physics Letters. 60(20). 2522–2524. 37 indexed citations
17.
Klatt, J., et al.. (1991). Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces. MRS Proceedings. 235. 4 indexed citations
18.
Höfler, G. E., J. Klatt, James N. Baillargeon, et al.. (1991). Direct Evidence for Interstitial Carbon in Heavily Carbon-Doped GaAs. MRS Proceedings. 240. 1 indexed citations
19.
Bryan, R. P., J. J. Coleman, L. M. Miller, et al.. (1989). Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation. Applied Physics Letters. 55(2). 94–96. 28 indexed citations
20.
Bryan, R. P., Michael Givens, J. Klatt, R. S. Averback, & J. J. Coleman. (1989). Compositional disordering and the formation of semi-insulating layers in AlAs-GaAs superlattices by MeV oxygen implantation. Journal of Electronic Materials. 18(1). 39–44. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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