Rik Jos

734 citations

28 papers · 573 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Wireless Power Transfer Systems
- PAPR reduction in OFDM
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Filtration and Separation 1
Electrical and Electronic Engineering 26
- Radio Frequency Integrated Circuit Design 13
- Advanced Power Amplifier Design 13
- Silicon Carbide Semiconductor Technologies 10
- Semiconductor materials and devices 7
- Electromagnetic Compatibility and Noise Suppression 6
- Advanced DC-DC Converters 5
- PAPR reduction in OFDM 4

Co-authors: Christian Fager Herbert Zirath Mustafa Özen Ulf Gustavsson Hossein Mashad Nemati E.Ö. Sveinbjörnsson Fredrik Allerstam Halldór Ólafsson
Journals: IEEE Electron Device Letters (3 papers)Journal of Applied Physics (3 papers)IEEE Journal of Solid-State Circuits (2 papers)IEEE Transactions on Microwave Theory and Techniques (2 papers)IEEE Transactions on Circuits & Systems II Express Briefs (1 paper)
Partner nations: Sweden Netherlands United States

In The Last Decade

Rik Jos

27 papers receiving 551 citations

Peers

Countries citing papers authored by Rik Jos

Since Specialization

Citations

This map shows the geographic impact of Rik Jos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rik Jos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rik Jos more than expected).

Fields of papers citing papers by Rik Jos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rik Jos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rik Jos. The network helps show where Rik Jos may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Rik Jos, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Rik Jos Line = papers co-authored together Rik Jos links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory TU/e Research Portal ·Mustafa Özen, Mustafa Açar, Mark P. van der Heijden, C. Rauls, Domine Leenaerts, Rik Jos, Christian Fager	2014	4
2	A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages Journal of Applied Physics ·Rik Jos	2013	4
3	Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors Journal of Applied Physics ·Rik Jos	2012	10
4	Continuous Class-E Power Amplifier Modes IEEE Transactions on Circuits & Systems II Express Briefs ·Mustafa Özen, Rik Jos, Christian Fager	2012	52
5	High efficiency RF pulse width modulation with tunable load network class-E PA Chalmers Research (Chalmers University of Technology) ·Mustafa Özen, Christer M. Andersson, Mattias Thorsell, Kristoffer Andersson, Niklas Rorsman, Christian Fager, Mustafa Açar, Mark P. van der Heijden, Rik Jos	2011	7
6	High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers IEEE Transactions on Microwave Theory and Techniques ·Mustafa Özen, Rik Jos, Christer M. Andersson, Mustafa Açar, Christian Fager	2011	32
7	High efficiency transmitter using varactor based dynamic load modulation Chalmers Research (Chalmers University of Technology) ·Christian Fager, Heather A. Collett, Thomas Eriksson, Rik Jos, Hossein Mashad Nemati, Ali Soltani Tehrani, Herbert Zirath	2010	1
8	Evaluation of high efficiency PAs for use in supply- and load-modulation transmitters Chalmers Publication Library (Chalmers University of Technology) ·Christian Fager, Hossein Mashad Nemati, Ulf Gustavsson, Rik Jos, Herbert Zirath	2009	3
9	Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures Chalmers Research (Chalmers University of Technology) ·Hossein Mashad Nemati, Christian Fager, Ulf Gustavsson, Rik Jos, Herbert Zirath	2008	16
10	Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs Semiconductor Science and Technology ·Fredrik Allerstam, Alawiyah Rahma, P. A. Graca, E.Ö. Sveinbjörnsson, T. Rödle, Rik Jos	2007	20
11	Design and Fabrication of 4H-SiC RF MOSFETs IEEE Transactions on Electron Devices ·Sina Mobasher Moghadam, Fredrik Allerstam, E.Ö. Sveinbjörnsson, Hans Hjelmgren, Samuel Enblom, Kristoffer Andersson, Herbert Zirath, S. Weckbach, Rik Jos	2007	6
12	A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation Journal of Applied Physics ·Fredrik Allerstam, Halldór Ólafsson, Christopher S. McMillan, D Dochev, E.Ö. Sveinbjörnsson, Julie Auray, Rik Jos	2007	65
13	High-power-density 4H-SiC RF MOSFETs IEEE Electron Device Letters ·Alawiyah Rahma, Fredrik Allerstam, Halldór Ólafsson, P. Anders Nilsson, Hans Hjelmgren, Kristoffer Andersson, E.Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, Rik Jos	2006	4
14	High Channel Mobility 4H-SiC MOSFETs Materials science forum ·E.Ö. Sveinbjörnsson, Alawiyah Rahma, Fredrik Allerstam, P. A. Graca, W. James Brockbank, Herbert Zirath, Julie Auray, Rik Jos	2006	16
15	A Load Modulated High Efficiency Power Amplifier S Balafouta-Tseleni, Rik Jos, Herbert Zirath	2006	9
16	High Power-Density 4H-SiC RF MOSFETs Materials science forum ·Alawiyah Rahma, Fredrik Allerstam, Halldór Ólafsson, W. James Brockbank, Hans Hjelmgren, Kristoffer Andersson, E.Ö. Sveinbjörnsson, Herbert Zirath, Julie Auray, Rik Jos	2006	0
17	High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Materials science forum ·Fredrik Allerstam, Jacqueline L. Kusnezov, Halldór Ólafsson, E.Ö. Sveinbjörnsson, T. Rödle, Rik Jos	2005	3
18	High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material IEEE Electron Device Letters ·Alawiyah Rahma, Halldór Ólafsson, Fredrik Allerstam, Kohei Nago, E.Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, Rik Jos	2005	43
19	Future developments and technology options in cellular phone power amplifiers: from power amplifier to integrated RF front-end module Rik Jos	2002	16
20	Technology developments driving an evolution of cellular phone power amplifiers to integrated RF front-end modules IEEE Journal of Solid-State Circuits ·Rik Jos	2001	13

About Rik Jos

Rik Jos is a scholar working on Filtration and Separation, Electrical and Electronic Engineering, Condensed Matter Physics, Media Technology and Physical and Theoretical Chemistry, having authored 28 papers that have together received 573 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (13 papers), Advanced Power Amplifier Design (13 papers), Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (7 papers), Electromagnetic Compatibility and Noise Suppression (6 papers), Advanced DC-DC Converters (5 papers), GaN-based semiconductor devices and materials (4 papers) and PAPR reduction in OFDM (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (560 citations), Condensed Matter Physics (73 citations), Ceramics and Composites (10 citations), Electronic, Optical and Magnetic Materials (30 citations) and Atomic and Molecular Physics, and Optics (43 citations). Rik Jos has collaborated with scholars based in Sweden, Netherlands and United States. Frequent co-authors include Christian Fager, Herbert Zirath, Mustafa Özen, Ulf Gustavsson, Hossein Mashad Nemati, E.Ö. Sveinbjörnsson, Fredrik Allerstam, Halldór Ólafsson, Mustafa Açar and T. Rödle. Their work appears in journals such as IEEE Electron Device Letters, Journal of Applied Physics, IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Circuits & Systems II Express Briefs.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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