Kijeong Han

780 total citations
36 papers, 593 citations indexed

About

Kijeong Han is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, Kijeong Han has authored 36 papers receiving a total of 593 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 1 paper in Surfaces, Coatings and Films. Recurrent topics in Kijeong Han's work include Silicon Carbide Semiconductor Technologies (34 papers), Multilevel Inverters and Converters (19 papers) and Semiconductor materials and devices (17 papers). Kijeong Han is often cited by papers focused on Silicon Carbide Semiconductor Technologies (34 papers), Multilevel Inverters and Converters (19 papers) and Semiconductor materials and devices (17 papers). Kijeong Han collaborates with scholars based in United States, Belgium and South Korea. Kijeong Han's co-authors include B. Jayant Baliga, Aditi Agarwal, Woongje Sung, Ajit Kanale, Subhashish Bhattacharya, Douglas C. Hopkins, Adam J. Morgan, Suyash Sushilkumar Shah, N. Yoshida and Naoto Horiguchi and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of Micromechanics and Microengineering.

In The Last Decade

Kijeong Han

36 papers receiving 564 citations

Peers

Kijeong Han

EEE

AMPO

CMP

EOMM

Ralf Siemieniec Germany

Katja Puschkarsky Germany

Shinichiro Matsunaga Japan

Hiroyuki Sakairi Japan

Maxime Berthou Spain

Sarah K. Haney United States

Masatoshi Aketa Japan

Karl Otto Dohnke Germany

Benedetto Buono Sweden

Yuichi Onozawa Japan

Ralf Siemieniec Germany

Kijeong Han

795 ×1.4

EEE

59 ×1.3

AMPO

57 ×1.7

CMP

28 ×1.4

EOMM

20 ×1.3

Citations per year, relative to Kijeong Han Kijeong Han (= 1×) peers Ralf Siemieniec

Countries citing papers authored by Kijeong Han

Since Specialization

Citations

This map shows the geographic impact of Kijeong Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kijeong Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kijeong Han more than expected).

Fields of papers citing papers by Kijeong Han

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kijeong Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kijeong Han. The network helps show where Kijeong Han may publish in the future.

Co-authorship network of co-authors of Kijeong Han

This figure shows the co-authorship network connecting the top 25 collaborators of Kijeong Han. A scholar is included among the top collaborators of Kijeong Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kijeong Han. Kijeong Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Agarwal, Aditi, Kijeong Han, & B. Jayant Baliga. (2021). 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types. IEEE Transactions on Electron Devices. 68(5). 2395–2400. 3 indexed citations

Agarwal, Aditi, Kijeong Han, & B. Jayant Baliga. (2020). Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies. IEEE Transactions on Electron Devices. 67(9). 3673–3678. 12 indexed citations

Agarwal, Aditi, Ajit Kanale, Kijeong Han, & B. Jayant Baliga. (2020). Switching and Short-Circuit Performance of 27 nm Gate Oxide, 650 V SiC Planar-Gate MOSFETs with 10 to 15 V Gate Drive Voltage. 8 indexed citations

Agarwal, Aditi, Kijeong Han, & B. Jayant Baliga. (2020). 2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. 64. 1–2. 6 indexed citations

Han, Kijeong, Aditi Agarwal, Ajit Kanale, et al.. (2020). Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 242–245. 32 indexed citations

Han, Kijeong & B. Jayant Baliga. (2020). 1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor. IEEE Electron Device Letters. 41(3). 437–440. 5 indexed citations

Han, Kijeong & B. Jayant Baliga. (2019). Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results. IEEE Transactions on Electron Devices. 66(5). 2321–2326. 28 indexed citations

Agarwal, Aditi, Ajit Kanale, Kijeong Han, B. Jayant Baliga, & Subhashish Bhattacharya. (2019). Impact of Gate Oxide Thickness on Switching and Short Circuit Performance of 1200 V 4H-SiC Inversion-channel MOSFETs. 59–62. 13 indexed citations

Agarwal, Aditi, Kijeong Han, & B. Jayant Baliga. (2019). Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. 237–238. 6 indexed citations

10.

Kanale, Ajit, Kijeong Han, B. Jayant Baliga, & Subhashish Bhattacharya. (2019). Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress. 5 indexed citations

11.

Han, Kijeong & B. Jayant Baliga. (2019). Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs. IEEE Transactions on Electron Devices. 66(9). 3916–3921. 24 indexed citations

12.

Han, Kijeong, Aditi Agarwal, & B. Jayant Baliga. (2019). Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results. 159–162. 16 indexed citations

13.

Han, Kijeong & B. Jayant Baliga. (2019). Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET. IEEE Electron Device Letters. 40(7). 1163–1166. 15 indexed citations

14.

Han, Kijeong & B. Jayant Baliga. (2018). The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit. IEEE Electron Device Letters. 40(2). 299–302. 23 indexed citations

15.

Agarwal, Aditi, Kijeong Han, & B. Jayant Baliga. (2018). Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide. 125–129. 21 indexed citations

16.

Han, Kijeong & B. Jayant Baliga. (2018). Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures. IEEE Transactions on Electron Devices. 65(8). 3333–3338. 13 indexed citations

17.

Han, Kijeong, et al.. (2018). New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs. 108–113. 28 indexed citations

18.

Sung, Woongje, Kijeong Han, & B. Jayant Baliga. (2017). A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel. 375–378. 25 indexed citations

19.

Han, Kijeong, B. Jayant Baliga, & Woongje Sung. (2017). A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results. IEEE Electron Device Letters. 39(2). 248–251. 41 indexed citations

20.

Xiao, Jing, et al.. (2012). Fabrication of CMOS-compatible optical filter arrays using gray-scale lithography. Journal of Micromechanics and Microengineering. 22(2). 25006–25006. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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