H. Aourag
Impact in
- Materials Chemistry top 2%
- Boron and Carbon Nanomaterials Research
- MXene and MAX Phase Materials
- ZnO doping and properties
- Condensed Matter Physics top 2%
Papers in
-
- Semiconductor Quantum Structures and Devices 33
- Semiconductor materials and interfaces 28
- Surface and Thin Film Phenomena 19
- Advanced Chemical Physics Studies 17
-
- GaN-based semiconductor devices and materials 17
H. Aourag
149 papers receiving 2.8k citations
Peers
Comparison fields: 5 of 70
- Materials Chemistry 2.0k
- Condensed Matter Physics 499
- Electronic, Optical and Magnetic Materials 580
- Ceramics and Composites 157
- Mechanics of Materials 633
Countries citing papers authored by H. Aourag
This map shows the geographic impact of H. Aourag's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Aourag with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Aourag more than expected).
Fields of papers citing papers by H. Aourag
This network shows the impact of papers produced by H. Aourag. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Aourag. The network helps show where H. Aourag may publish in the future.
Co-authorship network
The 25 scholars most cited alongside H. Aourag, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2007 | 11 | |
| 2 | 2005 | 23 | |
| 3 | 2003 | 2 | |
| 4 | 2003 | 4 | |
| 5 | 2002 | 6 | |
| 6 | 2002 | 5 | |
| 7 | 2001 | 10 | |
| 8 | 2000 | 12 | |
| 9 | 2000 | 27 | |
| 10 | 2000 | 91 | |
| 11 | 2000 | 39 | |
| 12 | 2000 | 3 | |
| 13 | 1999 | 9 | |
| 14 | 1998 | 2 | |
| 15 | 1998 | 16 | |
| 16 | 1998 | 4 | |
| 17 | 1997 | 2 | |
| 18 | 1996 | 18 | |
| 19 | 1992 | 1 | |
| 20 | 1990 | 11 |
About H. Aourag
H. Aourag is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 160 papers that have together received 3.0k indexed citations. Recurring topics across this work include Boron and Carbon Nanomaterials Research (40 papers), Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and interfaces (28 papers), Metal and Thin Film Mechanics (21 papers), Surface and Thin Film Phenomena (19 papers), GaN-based semiconductor devices and materials (17 papers), Advanced Chemical Physics Studies (17 papers) and Intermetallics and Advanced Alloy Properties (15 papers). The work is most often cited by research in Materials Chemistry (2.0k citations), Condensed Matter Physics (499 citations), Electronic, Optical and Magnetic Materials (580 citations), Ceramics and Composites (157 citations) and Mechanics of Materials (633 citations). H. Aourag has collaborated with scholars based in France, Algeria and United States. Frequent co-authors include M. Certier, B. Bouhafs, R. Terki, G. Bertrand, H. Feraoun, B. Khelifa, A. Zaoui, Christian Coddet, W. Sekkal and N. Bouarissa. Their work appears in journals such as physica status solidi (b), Materials Chemistry and Physics, Computational Materials Science, Physica B Condensed Matter and Materials Science and Engineering B.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.