Xiaoxin Xu

4.1k total citations
143 papers, 3.0k citations indexed

About

Xiaoxin Xu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Xiaoxin Xu has authored 143 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 129 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 17 papers in Cellular and Molecular Neuroscience. Recurrent topics in Xiaoxin Xu's work include Advanced Memory and Neural Computing (105 papers), Ferroelectric and Negative Capacitance Devices (90 papers) and Semiconductor materials and devices (48 papers). Xiaoxin Xu is often cited by papers focused on Advanced Memory and Neural Computing (105 papers), Ferroelectric and Negative Capacitance Devices (90 papers) and Semiconductor materials and devices (48 papers). Xiaoxin Xu collaborates with scholars based in China, Hong Kong and Singapore. Xiaoxin Xu's co-authors include Hangbing Lv, Qi Liu, Ming Liu, Qing Luo, Shibing Long, Hongtao Liu, Jianzhang Fang, Zhang Liu, Writam Banerjee and Ximiao Zhu and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

Xiaoxin Xu

132 papers receiving 3.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Xiaoxin Xu China 33 2.5k 1.1k 588 478 351 143 3.0k
An Chen China 22 1.4k 0.6× 758 0.7× 225 0.4× 265 0.6× 184 0.5× 80 2.4k
Lei Xu China 32 2.7k 1.1× 742 0.7× 549 0.9× 290 0.6× 387 1.1× 114 3.7k
Fei Yu China 27 1.2k 0.5× 291 0.3× 529 0.9× 105 0.2× 383 1.1× 60 2.0k
Reji Thomas India 34 2.7k 1.1× 2.0k 1.9× 212 0.4× 72 0.2× 504 1.4× 128 4.0k
Liang Chu China 33 2.5k 1.0× 2.0k 1.9× 147 0.3× 470 1.0× 1.0k 2.9× 120 3.6k
Heming Huang France 24 2.3k 0.9× 459 0.4× 678 1.2× 68 0.1× 329 0.9× 82 2.6k
Xiaochen Ren China 25 2.3k 0.9× 1.2k 1.1× 124 0.2× 281 0.6× 983 2.8× 69 3.4k
Wei-Chen Wei China 17 1.4k 0.6× 398 0.4× 157 0.3× 687 1.4× 46 0.1× 27 2.0k
Jiaming Chen China 19 751 0.3× 512 0.5× 80 0.1× 294 0.6× 64 0.2× 115 1.4k
Cong Ye China 28 1.8k 0.7× 744 0.7× 620 1.1× 72 0.2× 470 1.3× 98 2.3k

Countries citing papers authored by Xiaoxin Xu

Since Specialization
Citations

This map shows the geographic impact of Xiaoxin Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiaoxin Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiaoxin Xu more than expected).

Fields of papers citing papers by Xiaoxin Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiaoxin Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiaoxin Xu. The network helps show where Xiaoxin Xu may publish in the future.

Co-authorship network of co-authors of Xiaoxin Xu

This figure shows the co-authorship network connecting the top 25 collaborators of Xiaoxin Xu. A scholar is included among the top collaborators of Xiaoxin Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xiaoxin Xu. Xiaoxin Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Woyu, Ning Lin, Yifei Yu, et al.. (2024). Semantic memory–based dynamic neural network using memristive ternary CIM and CAM for 2D and 3D vision. Science Advances. 10(33). eado1058–eado1058. 4 indexed citations
2.
Shang, Dashan, Qing Luo, Junjie An, et al.. (2023). A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing. Nature Communications. 14(1). 6385–6385. 38 indexed citations
3.
Wang, Shaocong, Yi Li, Dingchen Wang, et al.. (2023). Echo state graph neural networks with analogue random resistive memory arrays. Nature Machine Intelligence. 5(2). 104–113. 54 indexed citations
4.
Wang, Xiwei, Zi Wang, Danian Dong, et al.. (2023). A 40-nm SONOS Digital CIM Using Simplified LUT Multiplier and Continuous Sample-Hold Sense Amplifier for AI Edge Inference. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 31(12). 2044–2052. 3 indexed citations
5.
Wang, Linfang, Junjie An, Zhi Li, et al.. (2023). A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference. IEEE Journal of Solid-State Circuits. 58(10). 2839–2850. 22 indexed citations
6.
Wang, Yiming, Dengyun Lei, Xiaoxin Xu, et al.. (2022). A computing-in-memory macro based on three-dimensional resistive random-access memory. Nature Electronics. 5(7). 469–477. 96 indexed citations
7.
Huo, Qiang, Zhisheng Chen, Qi Gao, et al.. (2022). A Security-Enhanced, Charge-Pump-Free, ISO14443-A-/ISO10373-6-Compliant RFID Tag With 16.2-μW Embedded RRAM and Reconfigurable Strong PUF. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 31(2). 243–252. 5 indexed citations
8.
Wang, Yiming, Qiang Huo, Xiaoxin Xu, et al.. (2021). A Homogeneous, Reconfigurable, and Efficient Implementation of PUF in 3-D Selector-Free RRAM. IEEE Transactions on Electron Devices. 68(5). 2577–2581. 6 indexed citations
9.
Wang, Linfang, Chunmeng Dou, Xin Si, et al.. (2021). Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing Control. IEEE Transactions on Circuits & Systems II Express Briefs. 68(5). 1640–1644. 32 indexed citations
10.
Gong, Tiancheng, Danian Dong, Qing Luo, et al.. (2021). Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement. IEEE Electron Device Letters. 42(3). 312–314. 4 indexed citations
11.
Yang, Jianguo, Xiaoyong Xue, Xiaoxin Xu, et al.. (2020). A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques. 1–2. 16 indexed citations
12.
Gao, Rui, Dengyun Lei, Zhiyuan He, et al.. (2019). Effect of Moisture Stress on the Resistance of HfO2/TaOx-Based 8-Layer 3D Vertical Resistive Random Access Memory. IEEE Electron Device Letters. 41(1). 38–41. 11 indexed citations
13.
Luo, Qing, Xumeng Zhang, Jie Yu, et al.. (2019). Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System. IEEE Electron Device Letters. 40(5). 718–721. 28 indexed citations
14.
Luo, Qing, Haili Ma, Kan‐Hao Xue, et al.. (2019). Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films. IEEE Electron Device Letters. 40(4). 570–573. 41 indexed citations
15.
Zhao, Ying, Xumeng Zhang, Xiaoxin Xu, et al.. (2018). A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design. IEEE Transactions on Electron Devices. 65(10). 4290–4296. 24 indexed citations
16.
Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2018). Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory. IEEE Electron Device Letters. 39(9). 1302–1305. 8 indexed citations
17.
Gong, Tiancheng, Qing Luo, Hangbing Lv, et al.. (2018). Unveiling the Switching Mechanism of a TaO<italic>x</italic>/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements. IEEE Electron Device Letters. 39(8). 1152–1155. 9 indexed citations
18.
Ma, Haili, Xumeng Zhang, Facai Wu, et al.. (2018). A Self-Rectifying Resistive Switching Device Based on HfO2/TaO<inline-formula> <tex-math notation="LaTeX">$_{{x}}$ </tex-math> </inline-formula> Bilayer Structure. IEEE Transactions on Electron Devices. 66(2). 924–928. 31 indexed citations
19.
Dong, Danian, Jing Liu, Xiaoxin Xu, et al.. (2018). The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory. IEEE Electron Device Letters. 39(5). 676–679. 9 indexed citations
20.
Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2017). Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering. IEEE Electron Device Letters. 38(9). 1232–1235. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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