Danian Dong

1.2k total citations · 1 hit paper
54 papers, 845 citations indexed

About

Danian Dong is a scholar working on Electrical and Electronic Engineering, Artificial Intelligence and Materials Chemistry. According to data from OpenAlex, Danian Dong has authored 54 papers receiving a total of 845 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 9 papers in Artificial Intelligence and 8 papers in Materials Chemistry. Recurrent topics in Danian Dong's work include Advanced Memory and Neural Computing (34 papers), Ferroelectric and Negative Capacitance Devices (29 papers) and Semiconductor materials and devices (19 papers). Danian Dong is often cited by papers focused on Advanced Memory and Neural Computing (34 papers), Ferroelectric and Negative Capacitance Devices (29 papers) and Semiconductor materials and devices (19 papers). Danian Dong collaborates with scholars based in China, Hong Kong and Singapore. Danian Dong's co-authors include Xiaoxin Xu, Qi Liu, Ming Liu, Hangbing Lv, Shibing Long, Qing Luo, Zhaoan Yu, Peng Yuan, Xumeng Zhang and Kan‐Hao Xue and has published in prestigious journals such as Advanced Materials, Nature Materials and SHILAP Revista de lepidopterología.

In The Last Decade

Danian Dong

49 papers receiving 826 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

2023 152 citations Guangjian Wu, Xumeng Zhang et al. Nature Materials profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Danian Dong China	12	684	275	159	130	119	54	845
Yongmo Park United States	10	576 0.8×	388 1.4×	125 0.8×	161 1.2×	73 0.6×	17	847
Tae Joon Park United States	13	421 0.6×	263 1.0×	165 1.0×	62 0.5×	69 0.6×	30	717
Sohail Abbas South Korea	11	494 0.7×	258 0.9×	66 0.4×	175 1.3×	86 0.7×	14	617
Ivan Sanchez Esqueda United States	20	1.1k 1.6×	413 1.5×	136 0.9×	92 0.7×	41 0.3×	67	1.3k
Chung Lam United States	16	924 1.4×	477 1.7×	94 0.6×	175 1.3×	149 1.3×	48	1.1k
Ye Tao China	17	635 0.9×	149 0.5×	64 0.4×	239 1.8×	71 0.6×	52	762
Fuyou Liao China	16	902 1.3×	511 1.9×	77 0.5×	224 1.7×	143 1.2×	26	1.1k
Benjamin Grisafe United States	20	1.0k 1.5×	430 1.6×	73 0.5×	80 0.6×	84 0.7×	35	1.1k
Xiaoyang Yang China	12	592 0.9×	259 0.9×	31 0.2×	152 1.2×	58 0.5×	25	758

Countries citing papers authored by Danian Dong

Since Specialization

Citations

This map shows the geographic impact of Danian Dong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Danian Dong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Danian Dong more than expected).

Fields of papers citing papers by Danian Dong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Danian Dong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Danian Dong. The network helps show where Danian Dong may publish in the future.

Co-authorship network of co-authors of Danian Dong

This figure shows the co-authorship network connecting the top 25 collaborators of Danian Dong. A scholar is included among the top collaborators of Danian Dong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Danian Dong. Danian Dong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Li, Yi, Ning Lin, Danian Dong, et al.. (2025). Brain‐Inspired In‐Memory Data Pruning and Computing with TaO _x Mem‐Selectors. Advanced Materials. 37(43). e02168–e02168. 1 indexed citations

Sun, Wenxuan, Jie Yu, Danian Dong, et al.. (2024). Investigation on the 3D Memristor Array Architecture for 3D Reservoir Computing System Implementation. IEEE Electron Device Letters. 45(8). 1445–1448. 1 indexed citations

Dong, Danian, Woyu Zhang, Jinshan Yue, et al.. (2024). Hardware Implementation of Next Generation Reservoir Computing with RRAM‐Based Hybrid Digital‐Analog System. SHILAP Revista de lepidopterología. 6(10).

Wu, Guangjian, Xumeng Zhang, Guangdi Feng, et al.. (2023). Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. Nature Materials. 22(12). 1499–1506. 152 indexed citations breakdown →

Wang, Shaocong, Yi Li, Dingchen Wang, et al.. (2023). Echo state graph neural networks with analogue random resistive memory arrays. Nature Machine Intelligence. 5(2). 104–113. 54 indexed citations

Wang, Xiwei, Zi Wang, Danian Dong, et al.. (2023). A 40-nm SONOS Digital CIM Using Simplified LUT Multiplier and Continuous Sample-Hold Sense Amplifier for AI Edge Inference. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 31(12). 2044–2052. 3 indexed citations

Zheng, Xu, Lizhou Wu, Danian Dong, et al.. (2023). Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip. IEEE Electron Device Letters. 44(6). 919–922. 4 indexed citations

Yu, Jie, Wenxuan Sun, Xu Zheng, et al.. (2022). Performance Improvement of Memristor-Based Echo State Networks by Optimized Programming Scheme. IEEE Electron Device Letters. 43(6). 866–869. 12 indexed citations

Gong, Tiancheng, Danian Dong, Qing Luo, et al.. (2021). Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement. IEEE Electron Device Letters. 42(3). 312–314. 4 indexed citations

10.

Xu, Zheng, Jing Liu, Danian Dong, et al.. (2020). Back-End-of-Line-Based Resistive RAM in 0.13 μ m Partially-Depleted Silicon-on-Insulator Process for Highly Reliable Irradiation- Resistant Application. IEEE Electron Device Letters. 42(1). 30–33. 2 indexed citations

11.

Luo, Qing, Xumeng Zhang, Jie Yu, et al.. (2019). Memory Switching and Threshold Switching in a 3D Nanoscaled NbO_X System. IEEE Electron Device Letters. 40(5). 718–721. 28 indexed citations

12.

Luo, Qing, Haili Ma, Kan‐Hao Xue, et al.. (2019). Composition-Dependent Ferroelectric Properties in Sputtered Hf_XZr_1−XO₂ Thin Films. IEEE Electron Device Letters. 40(4). 570–573. 41 indexed citations

13.

Yu, Jie, Xiaoxin Xu, Tiancheng Gong, et al.. (2019). Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure. Nanoscale Research Letters. 14(1). 111–111. 17 indexed citations

14.

Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2018). Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory. IEEE Electron Device Letters. 39(9). 1302–1305. 8 indexed citations

15.

Gong, Tiancheng, Qing Luo, Hangbing Lv, et al.. (2018). Unveiling the Switching Mechanism of a TaO_{<italic>x</italic>}/HfO₂ Self-Selective Cell by Probing the Trap Profiles With RTN Measurements. IEEE Electron Device Letters. 39(8). 1152–1155. 9 indexed citations

16.

Dong, Danian, Jing Liu, Xiaoxin Xu, et al.. (2018). The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory. IEEE Electron Device Letters. 39(5). 676–679. 9 indexed citations

17.

Luo, Qing, Xumeng Zhang, Y. Hu, et al.. (2018). Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application. IEEE Electron Device Letters. 39(5). 664–667. 76 indexed citations

18.

Luo, Qing, Xiaoxin Xu, Tiancheng Gong, et al.. (2017). 8-Layers 3D vertical RRAM with excellent scalability towards storage class memory applications. 2.7.1–2.7.4. 74 indexed citations

19.

Higo, T., E. Kadokura, Hiroshi Sakai, et al.. (1998). High field experiment of 1.3 m-long X-band structure. CERN Document Server (European Organization for Nuclear Research). 71(8). 1940–1943. 1 indexed citations

20.

Dong, Danian & G.F. Vandegrift. (1997). Alkaline peroxide processing of low-enriched uranium targets for {sup 99}Mo production -- Decomposition of hydrogen peroxide. Nuclear Science and Engineering. 126(2). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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