Zhaomeng Gao

778 total citations
31 papers, 557 citations indexed

About

Zhaomeng Gao is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zhaomeng Gao has authored 31 papers receiving a total of 557 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zhaomeng Gao's work include Ferroelectric and Negative Capacitance Devices (25 papers), Ferroelectric and Piezoelectric Materials (15 papers) and Semiconductor materials and devices (14 papers). Zhaomeng Gao is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (25 papers), Ferroelectric and Piezoelectric Materials (15 papers) and Semiconductor materials and devices (14 papers). Zhaomeng Gao collaborates with scholars based in China, Singapore and Taiwan. Zhaomeng Gao's co-authors include Yan Cheng, Yonghui Zheng, Peng Yuan, Qing Luo, Yunzhe Zheng, Yuan Wang, Pengfei Jiang, Tiancheng Gong, Kan‐Hao Xue and Hangbing Lv and has published in prestigious journals such as Nature Communications, Journal of Applied Physics and RSC Advances.

In The Last Decade

Zhaomeng Gao

28 papers receiving 547 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhaomeng Gao China 11 496 410 54 37 15 31 557
Jaidah Mohan United States 14 1.1k 2.2× 880 2.1× 24 0.4× 42 1.1× 10 0.7× 28 1.1k
Dirk Utess Germany 5 427 0.9× 200 0.5× 15 0.3× 17 0.5× 4 0.3× 10 435
Ralf van Bentum Germany 9 1.1k 2.3× 689 1.7× 21 0.4× 37 1.0× 4 0.3× 14 1.2k
Nirmaan Shanker United States 10 607 1.2× 360 0.9× 42 0.8× 54 1.5× 4 0.3× 22 670
Gaobo Xu China 13 648 1.3× 157 0.4× 20 0.4× 91 2.5× 5 0.3× 89 677
Jaebeom Lee United States 10 601 1.2× 512 1.2× 23 0.4× 27 0.7× 8 0.5× 14 646
Evelyn T. Breyer Germany 16 1.0k 2.0× 476 1.2× 11 0.2× 55 1.5× 6 0.4× 28 1.0k
B. Pätzold Germany 8 534 1.1× 311 0.8× 11 0.2× 25 0.7× 3 0.2× 9 545
Harrison Sejoon Kim United States 12 393 0.8× 328 0.8× 19 0.4× 26 0.7× 16 1.1× 30 424
Ava J. Tan United States 16 955 1.9× 521 1.3× 10 0.2× 32 0.9× 6 0.4× 20 973

Countries citing papers authored by Zhaomeng Gao

Since Specialization
Citations

This map shows the geographic impact of Zhaomeng Gao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhaomeng Gao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhaomeng Gao more than expected).

Fields of papers citing papers by Zhaomeng Gao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhaomeng Gao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhaomeng Gao. The network helps show where Zhaomeng Gao may publish in the future.

Co-authorship network of co-authors of Zhaomeng Gao

This figure shows the co-authorship network connecting the top 25 collaborators of Zhaomeng Gao. A scholar is included among the top collaborators of Zhaomeng Gao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhaomeng Gao. Zhaomeng Gao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zheng, Yunzhe, Fengrui Sui, Zhaomeng Gao, et al.. (2024). Influence of interface on the domain polarization orientation in ferroelectric Hf0.5Zr0·5O2 thin films. Ceramics International. 50(23). 51894–51900. 2 indexed citations
2.
3.
Gao, Zhaomeng, Yunzhe Zheng, Tianjiao Xin, et al.. (2024). The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures. IEEE Electron Device Letters. 45(10). 1788–1791.
4.
5.
Zheng, Yunzhe, Yuke Zhang, Tianjiao Xin, et al.. (2023). Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films. Materials Today Nano. 24. 100406–100406. 10 indexed citations
6.
Jiang, Pengfei, et al.. (2023). Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature. IEEE Transactions on Nanotechnology. 23. 139–143. 1 indexed citations
7.
Yu, Haoran, Tiancheng Gong, Peng Yuan, et al.. (2023). Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes. Science China Information Sciences. 66(12).
8.
Gao, Zhaomeng, Weifeng Zhang, Yonghui Zheng, et al.. (2023). Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization. Device. 1(1). 100004–100004. 21 indexed citations
9.
Cheng, Yan, Zhaomeng Gao, Kun Hee Ye, et al.. (2022). Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nature Communications. 13(1). 645–645. 151 indexed citations
10.
Jia, Caihong, et al.. (2022). High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films. RSC Advances. 12(25). 15814–15821. 2 indexed citations
11.
Gao, Zhaomeng, et al.. (2022). Frequency dependence on polarization switching measurement in ferroelectric capacitors. Journal of Semiconductors. 43(1). 14102–14102. 20 indexed citations
12.
Gao, Zhaomeng, et al.. (2021). Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film. IEEE Electron Device Letters. 42(9). 1303–1306. 31 indexed citations
13.
Chen, Yuting, Yang Yang, Peng Yuan, et al.. (2021). Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility. Nano Research. 15(4). 2913–2918. 21 indexed citations
14.
Zheng, Yunzhe, Yonghui Zheng, Zhaomeng Gao, et al.. (2021). In-situ atomic visualization of structural transformation in Hf 0.5 Zr 0.5 O 2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase. 1–2. 4 indexed citations
15.
Li, Mengxin, Zhaomeng Gao, Chaoyang Kang, et al.. (2020). Non-volatile resistance switching in LaNiO 3 films on PMN-PT substrates. Journal of Physics D Applied Physics. 53(32). 325306–325306. 3 indexed citations
16.
Yang, Jianguo, Tiancheng Gong, Qing Luo, et al.. (2020). Robust True Random Number Generator using Stochastic Short-Term Recovery of Charge Trapping FinFET for Advanced Hardware Security. 1–2. 8 indexed citations
17.
Luo, Qing, Haili Ma, Kan‐Hao Xue, et al.. (2019). Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films. IEEE Electron Device Letters. 40(4). 570–573. 41 indexed citations
18.
Wang, Longfei, Yixin Luo, Zhaomeng Gao, et al.. (2019). Temperature-dependent evolution of surface charge screening and polarization at ferroelectric surfaces. Science China Physics Mechanics and Astronomy. 62(8). 8 indexed citations
19.
Gao, Zhaomeng, Pei Li, Longfei Wang, et al.. (2018). Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface. Advanced Materials Interfaces. 5(8). 37 indexed citations
20.
Gao, Zhaomeng, Pei Li, Longfei Wang, et al.. (2018). Resistance change effect in SrTiO3/Si (001) isotype heterojunction. Journal of Applied Physics. 123(8). 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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