Bing Chen

3.2k total citations
177 papers, 2.6k citations indexed

About

Bing Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Bing Chen has authored 177 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 148 papers in Electrical and Electronic Engineering, 35 papers in Materials Chemistry and 15 papers in Cellular and Molecular Neuroscience. Recurrent topics in Bing Chen's work include Ferroelectric and Negative Capacitance Devices (73 papers), Advanced Memory and Neural Computing (70 papers) and Semiconductor materials and devices (59 papers). Bing Chen is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (73 papers), Advanced Memory and Neural Computing (70 papers) and Semiconductor materials and devices (59 papers). Bing Chen collaborates with scholars based in China, United States and Singapore. Bing Chen's co-authors include Wei Lü, Bin Gao, Jinfeng Kang, Yuchao Yang, Xiaoyan Liu, Peng Huang, Lifeng Liu, Ran Cheng, Jihang Lee and Mark J. Kushner and has published in prestigious journals such as Advanced Materials, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

Bing Chen

159 papers receiving 2.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bing Chen China 25 2.0k 460 442 300 288 177 2.6k
An Chen China 22 1.4k 0.7× 758 1.6× 225 0.5× 184 0.6× 317 1.1× 80 2.4k
Dong Wu China 19 1.3k 0.6× 265 0.6× 262 0.6× 120 0.4× 838 2.9× 78 2.4k
Yiyang Li China 28 3.2k 1.6× 722 1.6× 367 0.8× 608 2.0× 184 0.6× 142 4.0k
Xinghua Li China 19 839 0.4× 173 0.4× 443 1.0× 195 0.7× 151 0.5× 113 1.7k
Paolo Pavan Italy 29 3.5k 1.7× 682 1.5× 254 0.6× 166 0.6× 267 0.9× 217 3.9k
Lan Liu China 21 932 0.5× 486 1.1× 151 0.3× 178 0.6× 240 0.8× 86 1.4k
Noel Rodríguez Spain 24 1.2k 0.6× 294 0.6× 119 0.3× 118 0.4× 554 1.9× 112 1.8k
Haitong Li China 25 1.9k 1.0× 544 1.2× 504 1.1× 277 0.9× 106 0.4× 71 2.4k
Kyung-Hyun Kim South Korea 15 930 0.5× 159 0.3× 258 0.6× 145 0.5× 61 0.2× 52 1.1k

Countries citing papers authored by Bing Chen

Since Specialization
Citations

This map shows the geographic impact of Bing Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bing Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bing Chen more than expected).

Fields of papers citing papers by Bing Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bing Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bing Chen. The network helps show where Bing Chen may publish in the future.

Co-authorship network of co-authors of Bing Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Bing Chen. A scholar is included among the top collaborators of Bing Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bing Chen. Bing Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Huan, Dongya Li, Chengji Jin, et al.. (2025). A Comprehensive Study on the Polarization, Reliability, and Switching Dynamics of Helium Ion-Bombardment HfZrO Ferroelectric Films. IEEE Transactions on Electron Devices. 72(7). 3521–3527.
2.
Shi, Caiping, Wanyuan Qu, Peng Lin, et al.. (2025). An overhead-reduced, efficient, fully analog neural-network computing hardware. Science Advances. 11(43). eadv7555–eadv7555.
3.
Lou, Xiaoding, Christine Franke, Ling Tang, et al.. (2024). Coupling alloyed lean lithium anodes with PIM-1-blended PEO electrolytes synergistically promotes reversible Li stripping/deposition reactions for all-solid-state lithium-metal batteries. Journal of Energy Storage. 94. 112399–112399. 2 indexed citations
4.
Lin, Gaobo, Bing Chen, Ran Cheng, et al.. (2024). Monolithic 3D Integration of 1T1C AFeRAM With InGaZnO/InO Dual-Channel FET and AFE ZrO 2 Capacitor for Low-Power and High-Density Embedded Nonvolatile Memory. IEEE Electron Device Letters. 46(2). 183–186. 1 indexed citations
5.
Gu, Yuchen, Jing Wan, Xiao Yu, et al.. (2024). An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications. IEEE Journal of the Electron Devices Society. 12. 345–349. 1 indexed citations
6.
Chen, Bing, et al.. (2024). A cold-electrode metal–oxide resistive random access memory. Applied Physics Letters. 125(1). 3 indexed citations
7.
Li, Xueyang, Chengji Jin, Xiao Yu, et al.. (2024). Experimental Demonstration of Non-Volatile Boolean Logic With Field Configurable 1FeFET-1RRAM Technology. IEEE Electron Device Letters. 45(6). 1084–1087. 4 indexed citations
8.
Zhang, Miaomiao, Chengji Jin, Bing Chen, et al.. (2024). Hybrid-Precision Synapse Based-on FDSOI FeFETs With Back-Gate Bias Modulation. IEEE Transactions on Electron Devices. 71(6). 3994–3997. 2 indexed citations
9.
Shi, Zongmo, Jian Wei, Xiaomei Feng, et al.. (2023). Epoxy group and conductive network incorporation effectively enhanced electrochemical performance of MWCNTs/Ca3Co4O9 nanocomposites. Ceramics International. 50(2). 3887–3894. 4 indexed citations
10.
Wang, Yuan, Yang Yang, Pengfei Jiang, et al.. (2023). HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications. IEEE Electron Device Letters. 44(6). 943–946. 8 indexed citations
11.
Jin, Chengji, Jiayi Zhao, Jiajia Chen, et al.. (2023). A Multi-Bit CAM Design With Ultra-High Density and Energy Efficiency Based on FeFET NAND. IEEE Electron Device Letters. 44(7). 1104–1107. 14 indexed citations
12.
Cheng, Ran, Xinze Li, Xiao Yu, et al.. (2023). Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf0.5Zr0.5O2 ferroelectric field effect transistors. Solid-State Electronics. 205. 108657–108657. 2 indexed citations
13.
Jin, Chengji, Jiajia Chen, Huan Liu, et al.. (2023). Polarization-Induced Temperature Instability of HfO2-Based Ferroelectric FET. IEEE Electron Device Letters. 45(1). 32–35. 2 indexed citations
14.
Zheng, Xu, Lizhou Wu, Danian Dong, et al.. (2023). Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip. IEEE Electron Device Letters. 44(6). 919–922. 4 indexed citations
15.
Chen, Bing, Chengji Jin, Xiao Yu, et al.. (2023). A True Random Number Generator Based on Semiconductor-Vacancies Junction Entropy Source and Square Transform Method. IEEE Transactions on Electron Devices. 70(10). 5484–5488. 3 indexed citations
16.
Chen, Jiajia, Chengji Jin, Xiao Yu, et al.. (2022). Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films. IEEE Transactions on Electron Devices. 69(9). 5297–5301. 44 indexed citations
17.
Peng, Yue, Wenwu Xiao, Yan Liu, et al.. (2021). HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability. IEEE Electron Device Letters. 43(2). 216–219. 63 indexed citations
18.
Inserra, Daniele, et al.. (2021). A Nonlinear Rectifying Diode Model for Low and High Power Levels in Microwave Regime. IEEE Microwave and Wireless Components Letters. 32(5). 456–459. 8 indexed citations
19.
Zidan, Mohammed A., YeonJoo Jeong, Jihang Lee, et al.. (2018). A general memristor-based partial differential equation solver. Nature Electronics. 1(7). 411–420. 201 indexed citations
20.
Yu, Xiao, Ran Cheng, Jiabao Sun, et al.. (2018). Quantitative Characterization of Fast-Trap Behaviors in Al2O3/GeOx/Ge pMOSFETs. IEEE Transactions on Electron Devices. 65(7). 2729–2735. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by An Chen Breakdown of academic impact, for papers by Dong Wu Breakdown of academic impact, for papers by Yiyang Li Breakdown of academic impact, for papers by Xinghua Li Breakdown of academic impact, for papers by Paolo Pavan Breakdown of academic impact, for papers by Lan Liu Breakdown of academic impact, for papers by Noel Rodríguez Breakdown of academic impact, for papers by Haitong Li Breakdown of academic impact, for papers by Kyung-Hyun Kim
Rankless by CCL
2026