Shuxian Lv

664 total citations · 1 hit paper
23 papers, 470 citations indexed

About

Shuxian Lv is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Shuxian Lv has authored 23 papers receiving a total of 470 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 3 papers in Biomedical Engineering. Recurrent topics in Shuxian Lv's work include Ferroelectric and Negative Capacitance Devices (21 papers), Semiconductor materials and devices (14 papers) and Advanced Memory and Neural Computing (12 papers). Shuxian Lv is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (21 papers), Semiconductor materials and devices (14 papers) and Advanced Memory and Neural Computing (12 papers). Shuxian Lv collaborates with scholars based in China and Singapore. Shuxian Lv's co-authors include Yuan Wang, Qing Luo, Pengfei Jiang, Tiancheng Gong, Yaxin Ding, Yan Wang, Peng Yuan, Yannan Xu, Yang Yang and Yuting Chen and has published in prestigious journals such as Science, Advanced Materials and Applied Physics Letters.

In The Last Decade

Shuxian Lv

23 papers receiving 462 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A stable rhombohedral phase in ferroelectric Hf(Zr) ₁₊ _x O ₂ capacitor with ultralow coercive field

2023 127 citations Yuan Wang, Yuan Wang et al. Science profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shuxian Lv China	13	419	275	51	23	21	23	470
Jiajia Liao China	12	474 1.1×	350 1.3×	43 0.8×	10 0.4×	16 0.8×	39	539
Yutuo Guo China	6	216 0.5×	258 0.9×	60 1.2×	36 1.6×	37 1.8×	10	359
Yihao Yang China	11	259 0.6×	222 0.8×	42 0.8×	18 0.8×	19 0.9×	19	347
Miaocheng Zhang China	12	331 0.8×	233 0.8×	41 0.8×	39 1.7×	54 2.6×	26	366
Cheol Hyun An South Korea	16	560 1.3×	352 1.3×	12 0.2×	26 1.1×	18 0.9×	25	602
Sanghun Jeon South Korea	9	363 0.9×	217 0.8×	47 0.9×	43 1.9×	29 1.4×	13	397
M. N. Martyshov Russia	10	281 0.7×	166 0.6×	88 1.7×	90 3.9×	48 2.3×	46	334
Vitalii Mikheev Russia	10	472 1.1×	295 1.1×	24 0.5×	24 1.0×	36 1.7×	19	504
Hung‐Wei Tsai Taiwan	11	304 0.7×	216 0.8×	28 0.5×	63 2.7×	63 3.0×	14	377
Byeong Hyeon Lee South Korea	10	302 0.7×	168 0.6×	62 1.2×	60 2.6×	31 1.5×	29	338

Countries citing papers authored by Shuxian Lv

Since Specialization

Citations

This map shows the geographic impact of Shuxian Lv's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shuxian Lv with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shuxian Lv more than expected).

Fields of papers citing papers by Shuxian Lv

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shuxian Lv. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shuxian Lv. The network helps show where Shuxian Lv may publish in the future.

Co-authorship network of co-authors of Shuxian Lv

This figure shows the co-authorship network connecting the top 25 collaborators of Shuxian Lv. A scholar is included among the top collaborators of Shuxian Lv based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shuxian Lv. Shuxian Lv is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yi, Xiaohui, et al.. (2024). Study on the Material Properties and Deterioration Mechanism of Palm Leaves. Restaurator International Journal for the Preservation of Library and Archival Material. 3 indexed citations

Zhong, Bowen, Shuxian Lv, Xiao Long, et al.. (2024). A Zero‐Voltage‐Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction. Advanced Materials. 36(32). e2404026–e2404026. 36 indexed citations

Wang, Yuan, Hongye Yuan, Shuxian Lv, et al.. (2024). Endurance Improvement of HfO₂-Based FeFETs on FDSOI Platform by Al₂O₃ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies. IEEE Transactions on Electron Devices. 71(12). 8007–8010. 2 indexed citations

Yuan, Hongye, Tiancheng Gong, Yuan Wang, et al.. (2024). Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation. Applied Physics Letters. 124(13). 38 indexed citations

Wang, Yuan, Yang Yang, Pengfei Jiang, et al.. (2023). HfO₂-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications. IEEE Electron Device Letters. 44(6). 943–946. 8 indexed citations

Ding, Yaxin, Jianguo Yang, Jianfeng Gao, et al.. (2023). 16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells. 1–2. 10 indexed citations

Wang, Yuan, Yuan Wang, Roger Guzmán, et al.. (2023). A stable rhombohedral phase in ferroelectric Hf(Zr) ₁₊ _x O ₂ capacitor with ultralow coercive field. Science. 381(6657). 558–563. 127 indexed citations breakdown →

Jiang, Pengfei, Yang Yang, Lu Tai, et al.. (2023). A 256 Kbit Hf_0.5Zr_0.5O₂-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350^oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ/bit at 2V write voltage), and Prominent Endurance (>10¹²). 1–4. 6 indexed citations

Wang, Yuan, Yang Yang, Pengfei Jiang, et al.. (2023). Precrystallization Engineering of Hf_0.5Zr_0.5O₂ Film in Back-End-of-Line Compatible Ferroelectric Device for Enhanced Remnant Polarization and Endurance. IEEE Electron Device Letters. 44(3). 396–399. 17 indexed citations

10.

Lv, Shuxian, Pengfei Jiang, Yuanxiang Chen, et al.. (2023). Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer. Nanomaterials. 13(10). 1608–1608. 1 indexed citations

11.

Gao, Zhaomeng, Weifeng Zhang, Yonghui Zheng, et al.. (2023). Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization. Device. 1(1). 100004–100004. 21 indexed citations

12.

Jiang, Pengfei, Yang Yang, Wei Wei, et al.. (2023). Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors. IEEE Electron Device Letters. 44(4). 602–605. 12 indexed citations

13.

Ding, Yaxin, Peng Yuan, Jie Yu, et al.. (2022). Forming-Free NbO_x-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves. IEEE Transactions on Electron Devices. 69(9). 5391–5394. 16 indexed citations

14.

Yuan, Peng, Yang Yang, Shuxian Lv, et al.. (2022). Enhanced Remnant Polarization (30 μC/cm²) and Retention of Ferroelectric Hf_0.5Zr_0.5O₂ by NH₃ Plasma Treatment. IEEE Electron Device Letters. 43(7). 1045–1048. 22 indexed citations

15.

Lv, Shuxian, Zhaomeng Gao, Yannan Xu, et al.. (2022). Improved Endurance of Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode. IEEE Electron Device Letters. 43(4). 561–564. 24 indexed citations

16.

Chen, Yuting, Yang Yang, Peng Yuan, et al.. (2022). Flexible Hf_xZr_1-xO₂ Thin Films on Polyimide for Energy Storage With High Flexibility. IEEE Electron Device Letters. 43(6). 930–933. 14 indexed citations

17.

Xu, Yannan, Yang Yang, Shengjie Zhao, et al.. (2022). Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory. IEEE Transactions on Electron Devices. 69(4). 2145–2150. 14 indexed citations

18.

Chen, Yuting, Yang Yang, Peng Yuan, et al.. (2021). Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility. Nano Research. 15(4). 2913–2918. 21 indexed citations

19.

Xu, Yannan, Yang Yang, Shengjie Zhao, et al.. (2021). Robust Breakdown Reliability and Improved Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Using Grain Boundary Interruption. IEEE Transactions on Electron Devices. 69(1). 430–433. 51 indexed citations

20.

Jiang, Pengfei, Wei Wei, Yang Yang, et al.. (2021). Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period. Advanced Electronic Materials. 8(8). 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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