V.G.K. Reddi

722 total citations
13 papers, 558 citations indexed

About

V.G.K. Reddi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, V.G.K. Reddi has authored 13 papers receiving a total of 558 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 3 papers in Computational Mechanics. Recurrent topics in V.G.K. Reddi's work include Semiconductor materials and devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). V.G.K. Reddi is often cited by papers focused on Semiconductor materials and devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). V.G.K. Reddi collaborates with scholars based in United States. V.G.K. Reddi's co-authors include C. T. Sah, P.L. Hower and T. R. Cass and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

V.G.K. Reddi

13 papers receiving 483 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V.G.K. Reddi United States	8	538	147	38	36	17	13	558
Edmund Sun United States	6	391 0.7×	147 1.0×	52 1.4×	58 1.6×	16 0.9×	7	413
K.A. Pickar United States	11	227 0.4×	107 0.7×	41 1.1×	64 1.8×	6 0.4×	18	285
C.W. Mueller United States	11	294 0.5×	180 1.2×	73 1.9×	14 0.4×	16 0.9×	18	376
Eberhard Spenke Germany	11	440 0.8×	135 0.9×	60 1.6×	11 0.3×	17 1.0×	20	491
R.K. Cook United States	7	443 0.8×	146 1.0×	36 0.9×	18 0.5×	24 1.4×	12	471
Tsuyoshi Kotani Japan	13	392 0.7×	382 2.6×	89 2.3×	26 0.7×	34 2.0×	30	464
R. Holmstrom United States	14	355 0.7×	195 1.3×	85 2.2×	16 0.4×	22 1.3×	33	410
M. G. Harvey United States	11	383 0.7×	283 1.9×	22 0.6×	10 0.3×	17 1.0×	24	407
B. Rose France	11	296 0.6×	238 1.6×	60 1.6×	22 0.6×	21 1.2×	28	344
Shang-Yi Chiang United States	11	565 1.1×	307 2.1×	113 3.0×	42 1.2×	44 2.6×	31	637

Countries citing papers authored by V.G.K. Reddi

Since Specialization

Citations

This map shows the geographic impact of V.G.K. Reddi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V.G.K. Reddi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V.G.K. Reddi more than expected).

Fields of papers citing papers by V.G.K. Reddi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V.G.K. Reddi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V.G.K. Reddi. The network helps show where V.G.K. Reddi may publish in the future.

Co-authorship network of co-authors of V.G.K. Reddi

This figure shows the co-authorship network connecting the top 25 collaborators of V.G.K. Reddi. A scholar is included among the top collaborators of V.G.K. Reddi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V.G.K. Reddi. V.G.K. Reddi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

13 of 13 papers shown

Cass, T. R. & V.G.K. Reddi. (1973). Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations. Applied Physics Letters. 23(5). 268–270. 34 indexed citations

Reddi, V.G.K., et al.. (1973). Channeling and dechanneling of ion-implanted phosphorus in silicon. Journal of Applied Physics. 44(7). 2951–2963. 32 indexed citations

Reddi, V.G.K., et al.. (1972). Channeling of Phosphorous Ions in Silicon. Applied Physics Letters. 20(1). 30–31. 7 indexed citations

Hower, P.L. & V.G.K. Reddi. (1970). Avalanche injection and second breakdown in transistors. IEEE Transactions on Electron Devices. 17(4). 320–335. 178 indexed citations

Reddi, V.G.K., et al.. (1969). Investigation of waveguide-below cutoff resonators for solid-state active devices. Electronics Letters. 5(10). 214–216. 4 indexed citations

Reddi, V.G.K., et al.. (1969). X-band oscillator and amplifier experiments using avalanche diode periodic structures. 54. 80–81. 6 indexed citations

Reddi, V.G.K.. (1968). Majority carrier surface mobilities in thermally oxidized silicon. IEEE Transactions on Electron Devices. 15(3). 151–160. 16 indexed citations

Reddi, V.G.K., et al.. (1968). Modular approach to higher-power avalanche-diode oscillators. Electronics Letters. 4(21). 446–447. 2 indexed citations

Reddi, V.G.K.. (1967). Influence of surface conditions on silicon planar transistor current gain. Solid-State Electronics. 10(4). 305–334. 66 indexed citations

10.

Reddi, V.G.K.. (1966). Injection of minority carriers at a field-induced junction near the Si-SiO₂interface. IEEE Transactions on Electron Devices. ED-13(3). 381–383. 4 indexed citations

11.

Reddi, V.G.K. & C. T. Sah. (1965). Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST). IEEE Transactions on Electron Devices. 12(3). 139–141. 55 indexed citations

12.

Reddi, V.G.K.. (1965). Tunable high-pass filter characteristics of a special MOS transistor. IEEE Transactions on Electron Devices. 12(11). 581–589. 14 indexed citations

13.

Sah, C. T. & V.G.K. Reddi. (1964). Frequency dependence of the reverse-biased capacitance of gold-doped silicon P⁺N step junctions. IEEE Transactions on Electron Devices. 11(7). 345–349. 140 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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