J.S. Brodsky

424 total citations
20 papers, 319 citations indexed

About

J.S. Brodsky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.S. Brodsky has authored 20 papers receiving a total of 319 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.S. Brodsky's work include Electrostatic Discharge in Electronics (10 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). J.S. Brodsky is often cited by papers focused on Electrostatic Discharge in Electronics (10 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). J.S. Brodsky collaborates with scholars based in United States, Canada and South Korea. J.S. Brodsky's co-authors include R.M. Fox, P.L. Hower, R. Steinhoff, Robert W. Baloh, Chiara Sabatti, Gail Ishiyama, Sang‐Gug Lee, Jin-Biao Huang, Gianluca Boselli and T. Smy and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Journal of Neurology.

In The Last Decade

J.S. Brodsky

19 papers receiving 296 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.S. Brodsky United States 8 243 69 46 26 19 20 319
Takashi Matsunaga Japan 10 137 0.6× 41 0.6× 5 0.1× 18 0.7× 27 1.4× 64 325
Yoonjoong Kim South Korea 12 213 0.9× 59 0.9× 5 0.1× 32 1.2× 110 5.8× 42 404
Jong‐Min Kim South Korea 9 176 0.7× 12 0.2× 2 0.0× 26 1.0× 30 390
Zijin Ding China 7 48 0.2× 12 0.2× 7 0.2× 38 1.5× 2 0.1× 13 125
Shuhei Mitani Japan 12 329 1.4× 34 0.5× 32 1.2× 3 0.2× 25 388
Soon Ho Kim South Korea 9 192 0.8× 4 0.1× 7 0.2× 173 6.7× 9 0.5× 37 333
Danqing Yang Germany 11 241 1.0× 13 0.2× 9 0.2× 1 0.0× 11 0.6× 20 361
Shuzhang Zhang China 10 192 0.8× 11 0.2× 4 0.1× 5 0.2× 5 0.3× 17 384
I‐Wei Wu United States 7 159 0.7× 5 0.1× 2 0.0× 70 2.7× 2 0.1× 19 333
Dhritiman Bhattacharya United States 10 138 0.6× 7 0.1× 5 0.1× 35 1.3× 26 298

Countries citing papers authored by J.S. Brodsky

Since Specialization
Citations

This map shows the geographic impact of J.S. Brodsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.S. Brodsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.S. Brodsky more than expected).

Fields of papers citing papers by J.S. Brodsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.S. Brodsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.S. Brodsky. The network helps show where J.S. Brodsky may publish in the future.

Co-authorship network of co-authors of J.S. Brodsky

This figure shows the co-authorship network connecting the top 25 collaborators of J.S. Brodsky. A scholar is included among the top collaborators of J.S. Brodsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.S. Brodsky. J.S. Brodsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Liang, et al.. (2014). Identification of two-probe TLP contact resistance issues and proposed solutions. Electrical Overstress/Electrostatic Discharge Symposium. 1–9. 1 indexed citations
2.
Boselli, Gianluca & J.S. Brodsky. (2013). The very unusual case of the IEC-robust IC with low HBM performance. Electrical Overstress/Electrostatic Discharge Symposium. 1–7. 3 indexed citations
3.
Jahanzeb, Agha, et al.. (2011). Capturing real world ESD stress with event detector. Electrical Overstress/Electrostatic Discharge Symposium. 1–5. 7 indexed citations
4.
Boselli, Gianluca, et al.. (2011). The Relevance Of Long-Duration TLP Stress On System Level ESD Design. Electrical Overstress/Electrostatic Discharge Symposium. 13(1). 993–1000. 10 indexed citations
5.
Boselli, Gianluca, et al.. (2010). An automated ESD verification tool for analog design. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 7 indexed citations
6.
Salman, Akram, et al.. (2010). Solutions to mitigate parasitic NPN bipolar action in high voltage analog technologies. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 4 indexed citations
7.
Brodsky, J.S., et al.. (2008). Clinical features and associated syndromes of mal de debarquement. Journal of Neurology. 255(7). 1038–1044. 72 indexed citations
8.
Duvvury, C., et al.. (2006). HBM stress of no-connect IC pins and subsequent arc-over events that lead to human-metal-discharge-like events into unstressed neighbor pins. Electrical Overstress/Electrostatic Discharge Symposium. 24–31. 6 indexed citations
9.
Steinhoff, R., Jin-Biao Huang, P.L. Hower, & J.S. Brodsky. (2003). Current filament movement and silicon melting in an ESD-robust DENMOS transistor. Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 39 indexed citations
10.
Walkey, D.J., et al.. (2002). A VCVS-based equivalent circuit model for static substrate thermal coupling. 102–105. 1 indexed citations
11.
Fox, Michael D. & J.S. Brodsky. (2002). Effects of self-heating-induced negative output conductance in SOI circuits. 4. 152–153. 6 indexed citations
12.
Hower, P.L., S. Merchant, T. Efland, et al.. (2002). Avalanche-induced thermal instability in Ldmos transistors. 153–156. 27 indexed citations
13.
Walkey, D.J., et al.. (2002). Equivalent circuit modeling of static substrate thermal coupling using VCVS representation. IEEE Journal of Solid-State Circuits. 2(9). 1198–1206. 36 indexed citations
14.
Hower, P.L., et al.. (2002). Using two-dimensional structures to model filamentation in semiconductor devices. 385–388. 3 indexed citations
15.
Brodsky, J.S., et al.. (2002). A physical thermal resistance model for vertical BJTs on SOI. 84–85.
16.
17.
Brodsky, J.S., et al.. (1999). A physics-based dynamic thermal impedance model for vertical bipolar transistors on SOI substrates. IEEE Transactions on Electron Devices. 46(12). 2333–2339. 18 indexed citations
18.
Brodsky, J.S., et al.. (1997). A physics-based, dynamic thermal impedance model for SOI MOSFET's. IEEE Transactions on Electron Devices. 44(6). 957–964. 24 indexed citations
19.
Fox, R.M., et al.. (1996). Thermal impedance extraction for bipolar transistors. IEEE Transactions on Electron Devices. 43(2). 342–346. 49 indexed citations
20.
Brodsky, J.S., et al.. (1993). Physics-Based Multiple-Pole Models for BJT Self-Heating.. 1993. 249–252. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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