W.W. Hooper

483 citations

21 papers · 353 indexed · h-index 8

Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design 8
- Semiconductor Lasers and Optical Devices 7
- Advancements in Semiconductor Devices and Circuit Design 7
- Photonic and Optical Devices 5
- Semiconductor materials and devices 4
- Silicon and Solar Cell Technologies 2
Instrumentation
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 2
Bioengineering
Condensed Matter Physics

Co-authors: Otto Leistiko Andrew S. Grove W. Shockley H. J. Queisser W. Schroen J.F. Jensen D.B. Rensch Robert A. Metzger
Cited by: Electrical and Electronic Engineering Instrumentation Atomic and Molecular Physics, and Optics
Journals: IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States Denmark

In The Last Decade

W.W. Hooper

19 papers receiving 305 citations

Peers

Countries citing papers authored by W.W. Hooper

Since Specialization

Citations

This map shows the geographic impact of W.W. Hooper's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.W. Hooper with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.W. Hooper more than expected).

Fields of papers citing papers by W.W. Hooper

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.W. Hooper. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.W. Hooper. The network helps show where W.W. Hooper may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W.W. Hooper, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W.W. Hooper Line = papers co-authored together W.W. Hooper links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Multigigahertz monolithic GaAs optoelectronic receivers using 0.2 mu m gate-length MESFETs R.H. Walden,W.W. Hooper,Oliver Sellwood,Mégarbané,Huamán Saavedra,Robert A. Metzger,Yueling Chen,L.E. Larson,E. V. Chernyavskii	2002	1
2	Performance of AlInAs/GaInAs/InP microwave DHBTs W.E. Stanchina,SK Manogna,D.B. Rensch,Cesare Morandini,M. Hafizi,W.W. Hooper,M. Lui,Yuehang Gao,I Scagliotti,Huamán Saavedra,Yueling Chen	2002	3
3	Laser-assisted thermally enhanced InP via etching for microwave device applications IEEE Transactions on Semiconductor Manufacturing ·Лилия Васильевна Боднарь,R. Scarmozzino,Richard M. Osgood,W.W. Hooper	1993	2
4	<title>Wideband impedance-matched integrated optoelectronic transmitter</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·D. Yap,Tupu Mark Norman Williams,W.W. Hooper,R.H. Walden,S. E. Rosenbaum,Marilene Santos Lima Pereira,Anders Wivel,Mégarbané	1992	1
5	InP-based heterostructure device technology for ultracold readout applications Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·WU Guanhua,Huma Tayyab,Priyanka Nayar,R.H. Walden,W.E. Stanchina,W.W. Hooper	1992	2
6	The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors IEEE Electron Device Letters ·M. Hafizi,Robert A. Metzger,W.E. Stanchina,D.B. Rensch,J.F. Jensen,W.W. Hooper	1992	23
7	<title>GaAs/GaAlAs integrated optoelectronic transmitter for microwave applications</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·D. Yap,Tupu Mark Norman Williams,S. E. Rosenbaum,Anders Wivel,W.W. Hooper,Ruokonen El,R.H. Walden	1991	1
8	GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology M.J. Delaney,Oliver Sellwood,L.E. Larson,J.F. Jensen,Joseph Kapusta,April S. Brown,W.W. Hooper,M. A. Thompson,Nur Fadlia,S. E. Rosenbaum	1989	1
9	Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications IEEE Electron Device Letters ·M.J. Delaney,Oliver Sellwood,L.E. Larson,J.F. Jensen,Joseph Kapusta,April S. Brown,W.W. Hooper,M. A. Thompson,Nur Fadlia,S. E. Rosenbaum	1989	12
10	Effect of Cr doping on the device quality of semi-insulating GaAs substrate material Journal of Crystal Growth ·S. B. Hyder,W.W. Hooper	1982	1
11	A K-band GaAs FET with 2.5 dB noise figure at 18 GHz W.W. Hooper,(unknown),亮錦戸,mscs Marileda Baggio	1977	5
12	GaAs FET technology and performance W.W. Hooper,Robert Fairman	1971	1
13	Design and performance of the GaAs FET IEEE Journal of Solid-State Circuits ·Nina Bechtel,W.W. Hooper,P.L. Hower	1970	7
14	A microwave GaAs field-effect transistor W.W. Hooper,P.L. Hower	1967	1
15	Effect of surface fields on the breakdown voltage of planar silicon p-n junctions IEEE Transactions on Electron Devices ·Andrew S. Grove,Otto Leistiko,W.W. Hooper	1967	134
16	An epitaxial GaAs field-effect transistor Proceedings of the IEEE ·W.W. Hooper,Jonathan Martinez Freires Aires	1967	40
17	The surface-controlled avalanche transistor IEEE Transactions on Electron Devices ·W. Shockley,W.W. Hooper	1964	13
18	Investigation of Surface Breakdown by Light Scanning W.W. Hooper,W. Schroen	1964	1
19	Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions Surface Science ·W. Shockley,W.W. Hooper,H. J. Queisser,W. Schroen	1964	69
20	Charges on Oxidized Silicon Surfaces Physical Review Letters ·W. Shockley,H. J. Queisser,W.W. Hooper	1963	35

About W.W. Hooper

W.W. Hooper is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Instrumentation, having authored 21 papers that have together received 353 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (13 papers), Radio Frequency Integrated Circuit Design (8 papers), Semiconductor Lasers and Optical Devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Photonic and Optical Devices (5 papers), Semiconductor materials and devices (4 papers), Semiconductor materials and interfaces (2 papers) and Silicon and Solar Cell Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (319 citations), Instrumentation (13 citations) and Atomic and Molecular Physics, and Optics (116 citations). W.W. Hooper has collaborated with scholars based in United States and Denmark. Frequent co-authors include Otto Leistiko, Andrew S. Grove, W. Shockley, H. J. Queisser, W. Schroen, J.F. Jensen, D.B. Rensch, Robert A. Metzger, W.E. Stanchina and M. Hafizi. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Crystal Growth, IEEE Transactions on Semiconductor Manufacturing and Proceedings of the IEEE.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact