W.W. Hooper

483 total citations
21 papers, 353 citations indexed

About

W.W. Hooper is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W.W. Hooper has authored 21 papers receiving a total of 353 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 1 paper in Condensed Matter Physics. Recurrent topics in W.W. Hooper's work include Semiconductor Quantum Structures and Devices (13 papers), Radio Frequency Integrated Circuit Design (8 papers) and Semiconductor Lasers and Optical Devices (7 papers). W.W. Hooper is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Radio Frequency Integrated Circuit Design (8 papers) and Semiconductor Lasers and Optical Devices (7 papers). W.W. Hooper collaborates with scholars based in United States and Denmark. W.W. Hooper's co-authors include Andrew S. Grove, Otto Leistiko, W. Shockley, H. J. Queisser, W. Schroen, J.F. Jensen, Robert A. Metzger, D.B. Rensch, M. Hafizi and W.E. Stanchina and has published in prestigious journals such as Physical Review Letters, Proceedings of the IEEE and IEEE Journal of Solid-State Circuits.

In The Last Decade

W.W. Hooper

19 papers receiving 305 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W.W. Hooper United States	8	319	116	46	30	28	21	353
Z. Hang United States	8	367 1.2×	395 3.4×	114 2.5×	51 1.7×	39 1.4×	15	452
A. Tate United States	12	423 1.3×	119 1.0×	37 0.8×	39 1.3×	18 0.6×	58	459
R.A. Milano United States	13	373 1.2×	300 2.6×	68 1.5×	66 2.2×	26 0.9×	32	421
T. Ambridge United Kingdom	10	296 0.9×	237 2.0×	71 1.5×	27 0.9×	14 0.5×	16	337
W. Ha United States	10	401 1.3×	305 2.6×	24 0.5×	83 2.8×	85 3.0×	23	444
A.W. Nelson United Kingdom	14	399 1.3×	328 2.8×	56 1.2×	26 0.9×	24 0.9×	32	443
P. Lambkin Ireland	11	271 0.8×	144 1.2×	20 0.4×	43 1.4×	11 0.4×	36	315
M. Kume Japan	11	332 1.0×	302 2.6×	27 0.6×	25 0.8×	55 2.0×	46	380
R.J. Capik United States	11	362 1.1×	274 2.4×	38 0.8×	42 1.4×	14 0.5×	24	412
K. W. Carey United States	11	419 1.3×	318 2.7×	68 1.5×	47 1.6×	26 0.9×	24	455

Countries citing papers authored by W.W. Hooper

Since Specialization

Citations

This map shows the geographic impact of W.W. Hooper's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.W. Hooper with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.W. Hooper more than expected).

Fields of papers citing papers by W.W. Hooper

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W.W. Hooper. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.W. Hooper. The network helps show where W.W. Hooper may publish in the future.

Co-authorship network of co-authors of W.W. Hooper

This figure shows the co-authorship network connecting the top 25 collaborators of W.W. Hooper. A scholar is included among the top collaborators of W.W. Hooper based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W.W. Hooper. W.W. Hooper is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Larson, L.E., W.W. Hooper, J.F. Jensen, et al.. (2003). A 10 GHz operational amplifier in GaAs MESFET technology. 72–73.

Walden, R.H., et al.. (2002). Multigigahertz monolithic GaAs optoelectronic receivers using 0.2 mu m gate-length MESFETs. 491–494. 1 indexed citations

Stanchina, W.E., et al.. (2002). Performance of AlInAs/GaInAs/InP microwave DHBTs. 17–20. 3 indexed citations

Scarmozzino, R., et al.. (1993). Laser-assisted thermally enhanced InP via etching for microwave device applications. IEEE Transactions on Semiconductor Manufacturing. 6(4). 357–360. 2 indexed citations

Yap, D., et al.. (1992). <title>Wideband impedance-matched integrated optoelectronic transmitter</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1582. 215–222. 1 indexed citations

Nayar, Priyanka, et al.. (1992). InP-based heterostructure device technology for ultracold readout applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1684. 139–139. 2 indexed citations

Hafizi, M., Robert A. Metzger, W.E. Stanchina, et al.. (1992). The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors. IEEE Electron Device Letters. 13(3). 140–142. 23 indexed citations

Yap, D., et al.. (1991). <title>GaAs/GaAlAs integrated optoelectronic transmitter for microwave applications</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1418. 471–476. 1 indexed citations

Delaney, M.J., L.E. Larson, J.F. Jensen, et al.. (1989). GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. 18.3/1–18.3/4. 1 indexed citations

10.

Delaney, M.J., L.E. Larson, J.F. Jensen, et al.. (1989). Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications. IEEE Electron Device Letters. 10(8). 355–357. 12 indexed citations

11.

Hyder, S. B. & W.W. Hooper. (1982). Effect of Cr doping on the device quality of semi-insulating GaAs substrate material. Journal of Crystal Growth. 56(2). 369–375. 1 indexed citations

12.

Hooper, W.W. & Robert Fairman. (1971). GaAs FET technology and performance. 17. 32–32. 1 indexed citations

13.

Bechtel, Nina, W.W. Hooper, & P.L. Hower. (1970). Design and performance of the GaAs FET. IEEE Journal of Solid-State Circuits. 5(6). 319–323. 7 indexed citations

14.

Hooper, W.W. & P.L. Hower. (1967). A microwave GaAs field-effect transistor. 38–38. 1 indexed citations

15.

Hooper, W.W., et al.. (1967). An epitaxial GaAs field-effect transistor. Proceedings of the IEEE. 55(7). 1237–1238. 40 indexed citations

16.

Grove, Andrew S., Otto Leistiko, & W.W. Hooper. (1967). Effect of surface fields on the breakdown voltage of planar silicon p-n junctions. IEEE Transactions on Electron Devices. 14(3). 157–162. 134 indexed citations

17.

Shockley, W. & W.W. Hooper. (1964). The surface-controlled avalanche transistor. IEEE Transactions on Electron Devices. 11(11). 535–535. 13 indexed citations

18.

Hooper, W.W. & W. Schroen. (1964). Investigation of Surface Breakdown by Light Scanning. 433–451. 1 indexed citations

19.

Shockley, W., W.W. Hooper, H. J. Queisser, & W. Schroen. (1964). Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions. Surface Science. 2. 277–287. 69 indexed citations

20.

Shockley, W., H. J. Queisser, & W.W. Hooper. (1963). Charges on Oxidized Silicon Surfaces. Physical Review Letters. 11(11). 489–490. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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