Weiran Kong

505 total citations
30 papers, 239 citations indexed

About

Weiran Kong is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Weiran Kong has authored 30 papers receiving a total of 239 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Weiran Kong's work include Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (10 papers) and Radio Frequency Integrated Circuit Design (8 papers). Weiran Kong is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (10 papers) and Radio Frequency Integrated Circuit Design (8 papers). Weiran Kong collaborates with scholars based in China, United States and Sweden. Weiran Kong's co-authors include Raj Solanki, Shichang Zou, Yunlong Zheng, Jun He, P. Parries, Jun Xiao, Subramanian S. Iyer, Yiran Xu, Salman Ahmed and J. B. Ferguson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Weiran Kong

29 papers receiving 230 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Weiran Kong China 10 211 41 37 30 24 30 239
Jeffrey B. Johnson United States 12 415 2.0× 32 0.8× 21 0.6× 41 1.4× 41 1.7× 49 431
Giuseppe La Rosa United States 13 657 3.1× 34 0.8× 42 1.1× 18 0.6× 39 1.6× 35 699
G. Bronner United States 9 345 1.6× 84 2.0× 45 1.2× 22 0.7× 36 1.5× 33 395
Gicheol Shin South Korea 9 269 1.3× 47 1.1× 71 1.9× 42 1.4× 21 0.9× 17 299
N. Planes France 17 781 3.7× 51 1.2× 39 1.1× 56 1.9× 49 2.0× 56 804
Simon Thomann Germany 10 314 1.5× 32 0.8× 62 1.7× 11 0.4× 12 0.5× 37 324
Pengpeng Ren China 14 431 2.0× 28 0.7× 87 2.4× 17 0.6× 13 0.5× 87 476
D. Takashima Japan 14 391 1.9× 54 1.3× 99 2.7× 53 1.8× 16 0.7× 54 435
Zixuan Sun China 12 325 1.5× 21 0.5× 55 1.5× 23 0.8× 18 0.8× 50 362
Campbell Millar United Kingdom 14 567 2.7× 75 1.8× 33 0.9× 53 1.8× 26 1.1× 44 600

Countries citing papers authored by Weiran Kong

Since Specialization
Citations

This map shows the geographic impact of Weiran Kong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Weiran Kong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Weiran Kong more than expected).

Fields of papers citing papers by Weiran Kong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Weiran Kong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Weiran Kong. The network helps show where Weiran Kong may publish in the future.

Co-authorship network of co-authors of Weiran Kong

This figure shows the co-authorship network connecting the top 25 collaborators of Weiran Kong. A scholar is included among the top collaborators of Weiran Kong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Weiran Kong. Weiran Kong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shan, Yuqiang, et al.. (2024). Hyperthermic intraperitoneal chemotherapy: Ideal and reality. Asian Journal of Surgery. 48(2). 986–995. 3 indexed citations
2.
Xiong, Wei, Jian Zhang, Hui Wang, et al.. (2022). Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology. Solid-State Electronics. 194. 108316–108316. 1 indexed citations
3.
Chen, Yu, Mingxu Fang, Li Wang, et al.. (2022). Low On-Resistance LDMOS with Stepped Field Plates from 12V to 40V in 300-MM 90-NM BCD Technology. 1–4. 4 indexed citations
4.
Pan, Jia, Yi Lu, Hao Li, et al.. (2019). Low Switch Loss and High Current Density Superjunction IGBT Based upon Deep Trench Technology. 1–3. 3 indexed citations
5.
Liu, Donghua, Jun Hu, Wenting Duan, et al.. (2019). Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS. Microelectronics Journal. 88. 29–36. 11 indexed citations
6.
He, Jun, et al.. (2019). RFFE Integration Design for 5G in 0.13um RFSOI Technology. 1–3. 6 indexed citations
7.
Wang, Huihui, Ming Qiao, Jie Wu, et al.. (2018). A 0.35μm 600V ultra-thin epitaxial BCD technology for high voltage gate driver IC. 311–314. 5 indexed citations
8.
Xu, Yiran, Jun Xiao, Jian Hu, et al.. (2017). Area-efficient charge pump with local boost technique for embedded flash memory. IEICE Electronics Express. 14(21). 20170944–20170944. 3 indexed citations
9.
Xu, Yiran, et al.. (2016). Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory. IEEE Transactions on Circuits & Systems II Express Briefs. 63(11). 1064–1068. 6 indexed citations
10.
Xiong, Wei, Jun Hu, Donghua Liu, et al.. (2016). Investigation and process optimization of SONOS cell’s drain disturb in 2-transistor structure flash arrays. Solid-State Electronics. 129. 44–51. 2 indexed citations
11.
Zheng, Yunlong, et al.. (2016). A duplex current‐reused CMOS LNA with complementary derivative superposition technique. International Journal of Circuit Theory and Applications. 45(1). 110–119. 11 indexed citations
12.
Zheng, Yunlong, et al.. (2016). A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application. Microelectronics Journal. 55. 64–69. 16 indexed citations
13.
Zhu, Hongwei, et al.. (2014). A 10-bit 2.5-MS/s SAR ADC with 60.46 dB SNDR in 0.13-μm CMOS technology. Analog Integrated Circuits and Signal Processing. 80(2). 255–261. 9 indexed citations
14.
Fang, Liang, et al.. (2014). A Highly Reliable 2-Bits/Cell Split-Gate Flash Memory Cell With a New Program-Disturbs Immune Array Configuration. IEEE Transactions on Electron Devices. 61(7). 2350–2356. 6 indexed citations
15.
Zheng, Yunlong, et al.. (2014). A 2.5-GHz 8.9-dBm IIP3 current-reused LNA in 0.18-μm CMOS technology. 1–3. 9 indexed citations
17.
Li, Rui, et al.. (2007). Threshold Voltage Shift Due to Mechanical Stress-Enhanced Plasma Process-Induced Damage in 0.13-$\mu\hbox{m}$ pMOSFET. IEEE Electron Device Letters. 28(5). 360–362. 6 indexed citations
18.
Yang, Xu, J. Dí­az-Reyes, Jack P. Lombardi, et al.. (2006). The First 0.1μm 6” GaAs PHEMT MMIC Process. 1 indexed citations
19.
Kong, Weiran, et al.. (1995). White light emitting SrS:Pr electroluminescent devices fabricated via atomic layer epitaxy. Applied Physics Letters. 66(4). 419–421. 4 indexed citations
20.
Kong, Weiran, Salman Ahmed, J. B. Ferguson, & Raj Solanki. (1995). Violet light emitting SrS/SrCl:Eu thin-film electroluminescent devices. Applied Physics Letters. 67(1). 7–9. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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