H. Takashima

490 citations

16 papers · 339 indexed · h-index 10

Co-authors: Meishoku Masahara Yongxun Liu H. Yamauchi K. Ishii E. Suzuki T. Sekigawa Toshiyuki Tsutsumi Kenichi Ishii
Topics: Semiconductor materials and devices (16 papers)Advancements in Semiconductor Devices and Circuit Design (14 papers)Integrated Circuits and Semiconductor Failure Analysis (7 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Condensed Matter Physics
Journals: IEEE Transactions on Electron Devices Japanese Journal of Applied Physics IEEE Electron Device Letters
Partner nations: Japan

In The Last Decade

H. Takashima

16 papers receiving 322 citations

Peers

Countries citing papers authored by H. Takashima

Since Specialization

Citations

This map shows the geographic impact of H. Takashima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Takashima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Takashima more than expected).

Fields of papers citing papers by H. Takashima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Takashima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Takashima. The network helps show where H. Takashima may publish in the future.

Co-authorship network of co-authors of H. Takashima

This figure shows the co-authorship network connecting the top 25 collaborators of H. Takashima. A scholar is included among the top collaborators of H. Takashima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Takashima. H. Takashima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

#	Work	Indexed citations
1	Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate 2006 ·Japanese Journal of Applied Physics ·Kazuhiko Endo,Meishoku Masahara,Yongxun Liu,Takashi Matsukawa,Kenichi Ishii,(unknown),H. Takashima,Hiromi Yamauchi,Eiichi Suzuki	8
2	New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching 2006 ·Japanese Journal of Applied Physics ·Kazuhiko Endo,Shuichi Noda,Takuya Ozaki,Seiji Samukawa,Meishoku Masahara,Yongxun Liu,Kenichi Ishii,H. Takashima,(unknown),Takashi Matsukawa,Hiromi Yamauchi,Yuki Ishikawa,Eiichi Suzuki	5
3	Damage-free neutral beam etching technology for high mobility FinFETs 2006 ·Kazuhiko Endo,Shuichi Noda,Meishoku Masahara,Tomohiro Kubota,Takashi Ozaki,Seiji Samukawa,Yongxun Liu,K. Ishii,Yasuaki Ishikawa,(unknown),Takashi Matsukawa,H. Takashima,H. Yamauchi,E. Suzuki	15
4	Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology 2006 ·IEEE Transactions on Electron Devices ·Kazuhiko Endo,Shuichi Noda,Meishoku Masahara,Tomohiro Kubota,Takashi Ozaki,Seiji Samukawa,Yongxun Liu,K. Ishii,Yasuaki Ishikawa,(unknown),Takashi Matsukawa,H. Takashima,H. Yamauchi,E. Suzuki	36
5	Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching 2006 ·Japanese Journal of Applied Physics ·Kazuhiko Endo,Shuichi Noda,Meishoku Masahara,Tomohiro Kubota,Takuya Ozaki,Seiji Samukawa,Yongxun Liu,Kenichi Ishii,Yuki Ishikawa,(unknown),Takashi Matsukawa,H. Takashima,Hiromi Yamauchi,Eiichi Suzuki	9
6	Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions 2005 ·Microelectronic Engineering ·Takashi Matsukawa,Yongxun Liu,Meishoku Masahara,K. Ishii,Kazuhiko Endo,H. Yamauchi,(unknown),H. Takashima,Toshiki Higashino,E. Suzuki,S. Kanemaru	12
7	Investigation of Accumulation-mode Vertical Double-gate MOSFET 2005 ·Meishoku Masahara,Kazuhiko Endo,(unknown),Takashi Matsukawa,S. O’uchi,(unknown),H. Takashima,(unknown),E. Suzuki	1
8	Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching 2005 ·Microelectronic Engineering ·Yongxun Liu,(unknown),Meishoku Masahara,Kazuhiko Endo,K. Ishii,Takashi Matsukawa,H. Takashima,H. Yamauchi,E. Suzuki	5
9	Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate 2005 ·Kazuhiko Endo,Meishoku Masahara,Yongxun Liu,Takashi Matsukawa,Kenichi Ishii,(unknown),H. Takashima,Hiromi Yamauchi,Eiichi Suzuki	3
10	Flexible threshold voltage FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel 2004 ·Yongxun Liu,Meishoku Masahara,K. Ishii,Toshiyuki Tsutsumi,T. Sekigawa,H. Takashima,H. Yamauchi,E. Suzuki	61
11	4-terminal FinFETs with high threshold voltage controllahility 2004 ·(unknown),Meishoku Masahara,K. Ishii,T. Sekigawa,H. Takashima,H. Yamauchi,Toshiyuki Tsutsumi,Kunihiro Sakamoto,E. Suzuki	17
12	Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors 2004 ·Japanese Journal of Applied Physics ·Yongxun Liu,Kenichi Ishii,Meishoku Masahara,Toshiyuki Tsutsumi,H. Takashima,Hiromi Yamauchi,Eiichi Suzuki	35
13	A Highly Threshold Voltage-Controllable 4T FinFET with an 8.5-nm-Thick Si-Fin Channel 2004 ·IEEE Electron Device Letters ·Yongxun Liu,Meishoku Masahara,K. Ishii,T. Sekigawa,H. Takashima,H. Yamauchi,E. Suzuki	87
14	An Experimental Study of The Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate MOSFETs 2003 ·Yongxun Liu,Kenichi Ishii,Meishoku Masahara,Toshiyuki Tsutsumi,H. Takashima,(unknown)	2
15	Systematic electrical characteristics of ideal rectangular cross section si-fin channel double-gate MOSFETs fabricated by a wet process 2003 ·IEEE Transactions on Nanotechnology ·Yongxun Liu,K. Ishii,Toshiyuki Tsutsumi,Meishoku Masahara,T. Sekigawa,Kunihiro Sakamoto,H. Takashima,H. Yamauchi,E. Suzuki	23
16	Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography 2003 ·Japanese Journal of Applied Physics ·Yongxun Liu,Kenichi Ishii,Toshiyuki Tsutsumi,Meishoku Masahara,H. Takashima,Eiichi Suzuki	20

About H. Takashima

H. Takashima is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 16 papers that have together received 339 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (329 citations), Biomedical Engineering (57 citations) and Condensed Matter Physics (9 citations). H. Takashima has collaborated with scholars based in Japan. Frequent co-authors include Meishoku Masahara, Yongxun Liu, H. Yamauchi, K. Ishii, E. Suzuki, T. Sekigawa, Toshiyuki Tsutsumi, Kenichi Ishii, Eiichi Suzuki and Kazuhiko Endo. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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