J. Charles Pravin

577 total citations
48 papers, 409 citations indexed

About

J. Charles Pravin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Charles Pravin has authored 48 papers receiving a total of 409 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Charles Pravin's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and GaN-based semiconductor devices and materials (16 papers). J. Charles Pravin is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and GaN-based semiconductor devices and materials (16 papers). J. Charles Pravin collaborates with scholars based in India and Cuba. J. Charles Pravin's co-authors include P. Prajoon, D. Nirmal, J. Ajayan, A. Ramesh Babu, T. Ravichandran, P. Mohankumar, P. Senthil Kumar, Michael Benjamin, S. Rajesh and G. Srikesh and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Electronic Materials and Microelectronics Reliability.

In The Last Decade

J. Charles Pravin

40 papers receiving 381 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Charles Pravin India 12 355 106 82 81 68 48 409
Shengdong Hu China 14 712 2.0× 95 0.9× 37 0.5× 62 0.8× 67 1.0× 86 747
Paul M. Jordan Germany 10 397 1.1× 35 0.3× 115 1.4× 93 1.1× 82 1.2× 21 421
Soumyaranjan Routray India 14 442 1.2× 100 0.9× 211 2.6× 128 1.6× 111 1.6× 63 518
P. Murugapandiyan India 12 284 0.8× 254 2.4× 84 1.0× 67 0.8× 33 0.5× 40 379
Frédéric Morancho France 11 351 1.0× 107 1.0× 35 0.4× 33 0.4× 19 0.3× 45 379
Wei-Hung Kuo Taiwan 10 253 0.7× 239 2.3× 162 2.0× 72 0.9× 56 0.8× 36 386
X.W. Wang United States 9 260 0.7× 141 1.3× 75 0.9× 52 0.6× 22 0.3× 17 319
S. A. Ringel United States 12 292 0.8× 103 1.0× 92 1.1× 247 3.0× 61 0.9× 25 366
S. Barbet France 12 299 0.8× 43 0.4× 48 0.6× 200 2.5× 55 0.8× 37 390
Quang Ho Luc Taiwan 14 514 1.4× 234 2.2× 144 1.8× 132 1.6× 54 0.8× 52 593

Countries citing papers authored by J. Charles Pravin

Since Specialization
Citations

This map shows the geographic impact of J. Charles Pravin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Charles Pravin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Charles Pravin more than expected).

Fields of papers citing papers by J. Charles Pravin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Charles Pravin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Charles Pravin. The network helps show where J. Charles Pravin may publish in the future.

Co-authorship network of co-authors of J. Charles Pravin

This figure shows the co-authorship network connecting the top 25 collaborators of J. Charles Pravin. A scholar is included among the top collaborators of J. Charles Pravin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Charles Pravin. J. Charles Pravin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mohan, Bishav, J. Charles Pravin, Murugan Keerthi, & P. Prajoon. (2024). Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications. 317–321.
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Keerthi, Murugan, J. Charles Pravin, & B. Mohan. (2024). Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier. 313–316.
5.
Benjamin, Michael, et al.. (2023). A review on applications of molybdenum disulfide material: Recent developments. Micro and Nanostructures. 186. 207742–207742. 14 indexed citations
6.
Pravin, J. Charles, et al.. (2022). Performance Evaluation of LiNbO3-based Negative Capacitance Field Effect Transistors (NCFETs). 96–101. 1 indexed citations
7.
Pravin, J. Charles, et al.. (2022). Investigation of Quantum Mechanical Effects in Back Gated Molybdenum Disulfide Transistor. Silicon. 14(18). 12185–12190.
8.
Pravin, J. Charles, et al.. (2021). Potential and drain current simulation of a symmetric double gated Molybdenum Disulfide (MoS2) transistor. 3C Tecnología_Glosas de innovación aplicadas a la pyme. 385–395. 1 indexed citations
9.
Pravin, J. Charles, et al.. (2021). Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT. Superlattices and Microstructures. 156. 106954–106954. 11 indexed citations
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Pravin, J. Charles, et al.. (2021). Comparison and Simulation study of Cylindrical GAA NWMBCFET for sub 35nm. 3C Tecnología_Glosas de innovación aplicadas a la pyme. 199–209. 1 indexed citations
12.
Pravin, J. Charles, et al.. (2021). Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor. Journal of Nano- and Electronic Physics. 13(1). 1005–1. 2 indexed citations
13.
Pravin, J. Charles, et al.. (2021). Analysis of Multi Bridge Channel Undoped Trigate MOSFET by Different High-k Dielectrics for Sub 10 nm. Silicon. 14(10). 5535–5543. 4 indexed citations
14.
Pravin, J. Charles, et al.. (2020). CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics. 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA). 471–478. 3 indexed citations
15.
Ajayan, J., T. Ravichandran, P. Mohankumar, et al.. (2018). Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications. IETE Journal of Research. 67(3). 366–376. 3 indexed citations
16.
Ajayan, J., D. Nirmal, P. Prajoon, & J. Charles Pravin. (2017). Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications. AEU - International Journal of Electronics and Communications. 79. 151–157. 63 indexed citations
17.
Pravin, J. Charles, et al.. (2017). Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor. Superlattices and Microstructures. 104. 470–476. 23 indexed citations
18.
Ajayan, J., T. Ravichandran, P. Prajoon, J. Charles Pravin, & D. Nirmal. (2017). Investigation of breakdown performance in $$L_{g}$$ L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications. Journal of Computational Electronics. 17(1). 265–272. 19 indexed citations
19.
Pravin, J. Charles, et al.. (2016). A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance. IEEE Transactions on Electron Devices. 63(9). 3782–3789. 27 indexed citations
20.
Nirmal, D., et al.. (2016). Green InGaN/GaN LEDs with p-GaN interlayer for efficiency droop improvement. 216–219. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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