M.A. Shibib

556 citations

25 papers · 460 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Electrostatic Discharge in Electronics
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 25
- Advancements in Semiconductor Devices and Circuit Design 13
- Silicon Carbide Semiconductor Technologies 13
- Semiconductor materials and devices 12
- Silicon and Solar Cell Technologies 9
- Electrostatic Discharge in Electronics 4
- Radio Frequency Integrated Circuit Design 3
- Electromagnetic Compatibility and Noise Suppression 3
Atomic and Molecular Physics, and Optics 7
- Semiconductor materials and interfaces 7

Co-authors: J.G. Fossum F.A. Lindholm M. Darwish Alan H. Marshak R.J. McDonald James C. M. Hwang W.R. Curtice J.L. Titus
Journals: IEEE Transactions on Electron Devices (13 papers)Journal of Applied Physics (1 paper)IEEE Transactions on Nuclear Science (1 paper)IEEE Transactions on Device and Materials Reliability (1 paper)Solar Cells (1 paper)
Partner nations: United States France Canada

In The Last Decade

M.A. Shibib

23 papers receiving 432 citations

Peers

Countries citing papers authored by M.A. Shibib

Since Specialization

Citations

This map shows the geographic impact of M.A. Shibib's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.A. Shibib with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.A. Shibib more than expected).

Fields of papers citing papers by M.A. Shibib

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.A. Shibib. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.A. Shibib. The network helps show where M.A. Shibib may publish in the future.

Co-authors

The 23 scholars most cited alongside M.A. Shibib, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.A. Shibib Line = papers co-authored together M.A. Shibib links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Adaptive LDMOSFET Drain and Dummy-Gate Biases for Highly Modulated Signals IEEE Transactions on Electron Devices ·О.О. Фастовець, Carlos Frederico de Brito d'Andréa, W.R. Curtice, James C. M. Hwang, M.A. Shibib	2008	1
2	Effects of Dummy Gate on Breakdown and Degradation of LDMOSFETs IEEE Transactions on Device and Materials Reliability ·О.О. Фастовець, Carlos Frederico de Brito d'Andréa, James C. M. Hwang, M.A. Shibib, W.R. Curtice	2008	11
3	Modeling and Characterization of Effects of Dummy-Gate Bias on LDMOSFETs IEEE Transactions on Electron Devices ·О.О. Фастовець, Carlos Frederico de Brito d'Andréa, James C. M. Hwang, M.A. Shibib, W.R. Curtice	2007	13
4	An improved large-signal model for harmonic-balance simulation of Si LD-MOSFETs European Microwave Conference ·О.О. Фастовець, Carlos Frederico de Brito d'Andréa, A. Madjar, James C. M. Hwang, M. Frei, M.A. Shibib	2004	3
5	Experimental investigation of high voltage and high current gain of a lateral bipolar transistor based on a lateral DMOS structure M.A. Shibib	2002	0
6	Combination field plate/field ring termination structures for integrated power devices S.L. Kosier, A. Wei, M.A. Shibib, J. Hanika, Ronald D. Schrimpf, K.F. Galloway, Keith Curran	2002	4
7	Single event gate rupture of power DMOS transistors M. Darwish, M.A. Shibib, M.R. Pinto, J.L. Titus	2002	13
8	Degradation of breakdown voltage of DMOS due to arsenic implant damage M.A. Shibib, Peng Li-Yi, Emilie Le Rhun, C. M. Hsieh	2002	1
9	Characterization of a fully resonant, 1-MHz, 25-Watt, DC/DC converter fabricated in a rad-hard BiCMOS/high-voltage process IEEE Transactions on Nuclear Science ·J.L. Titus, M. Gehlhausen, J. Hanika, Tae-Hwa Jeong, M.A. Shibib, 毛军胜, David J. Roberts	1995	3
10	Lateral MOS-gated power devices-a unified view IEEE Transactions on Electron Devices ·M. Darwish, M.A. Shibib	1991	20
11	An analog/digital BCDMOS technology with dielectric isolation-devices and processes IEEE Transactions on Electron Devices ·C.-Y. Lu, N. S. Tsai, Christopher N. Dunn, N. Montes, M.A. Shibib, G Mutizira, Василькив Ирина Николаевна	1988	19
12	Observation and analysis of negative resistance in the forward I-V characteristics of dielectrically isolated high-voltage gated diode switches IEEE Transactions on Electron Devices ·M.A. Shibib, Anđela Birkić	1986	7
13	A physical model for the conductance of gated p-i-n switches IEEE Transactions on Electron Devices ·R.J. McDonald, J.G. Fossum, M.A. Shibib	1985	6
14	Monolithic high voltage gated diode crosspoint array IC Manita Lakhera, タケフミイチムラ, 実樹晴竹内, 中川種昭, Eduardo Martins Sequeira, E.J., M.A. Shibib, R. K. Smith, Kari Lyderson	1982	6
15	Limitations on the open-circuit voltage imposed by P+ and N+ regions in silicon solar cells Journal of Applied Physics ·M.A. Shibib, J.G. Fossum	1981	10
16	Inclusion of degeneracy in the analysis of heavily doped regions in silicon solar cells and other semiconductor devices Solar Cells ·M.A. Shibib	1981	5
17	An analytic model for minority-carrier transport in heavily doped regions of silicon devices IEEE Transactions on Electron Devices ·J.G. Fossum, M.A. Shibib	1981	53
18	Rigid band analysis of heavily doped semiconductor devices IEEE Transactions on Electron Devices ·Alan H. Marshak, M.A. Shibib, J.G. Fossum, F.A. Lindholm	1981	45
19	On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped silicon IEEE Transactions on Electron Devices ·M.A. Shibib, F.A. Lindholm	1980	15
20	A minority-carrier transport model for polysilicon contacts to silicon bipolar devices, including solar cells J.G. Fossum, M.A. Shibib	1980	27

About M.A. Shibib

M.A. Shibib is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Infectious Diseases and Organic Chemistry, having authored 25 papers that have together received 460 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (13 papers), Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (12 papers), Silicon and Solar Cell Technologies (9 papers), Semiconductor materials and interfaces (7 papers), Electrostatic Discharge in Electronics (4 papers), Radio Frequency Integrated Circuit Design (3 papers) and Electromagnetic Compatibility and Noise Suppression (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (444 citations), Atomic and Molecular Physics, and Optics (168 citations), Nuclear Energy and Engineering (1 citation), Materials Chemistry (73 citations) and Applied Mathematics (7 citations). M.A. Shibib has collaborated with scholars based in United States, France and Canada. Frequent co-authors include J.G. Fossum, F.A. Lindholm, M. Darwish, Alan H. Marshak, R.J. McDonald, James C. M. Hwang, W.R. Curtice, J.L. Titus, M.R. Pinto and C.-Y. Lu. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Applied Physics, IEEE Transactions on Nuclear Science, IEEE Transactions on Device and Materials Reliability and Solar Cells.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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