F.A. Lindholm

2.8k citations

124 papers · 2.2k · h-index 26

Impact in

Electrical and Electronic Engineering top 2%
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- solar cell performance optimization
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 120
- Advancements in Semiconductor Devices and Circuit Design 65
- Silicon and Solar Cell Technologies 64
- Semiconductor materials and devices 30
- solar cell performance optimization 21
- Silicon Carbide Semiconductor Technologies 19
- Thin-Film Transistor Technologies 18
Atomic and Molecular Physics, and Optics 58
- Semiconductor materials and interfaces 37
- Semiconductor Quantum Structures and Devices 14

Co-authors: J.G. Fossum (18 shared papers)A. Neugroschel (33 shared papers)M.A. Shibib (5 shared papers)Eric Burgess (3 shared papers)Chih‐Tang Sah (4 shared papers)Juin J. Liou (7 shared papers)Douglas Hamilton (12 shared papers)Κωνσταντίνος Μισιακός (7 shared papers)
Journals: IEEE Transactions on Electron Devices (42 papers)Journal of Applied Physics (15 papers)Solid-State Electronics (12 papers)Proceedings of the IEEE (8 papers)IEEE Electron Device Letters (4 papers)
Partner nations: United States Canada Netherlands

In The Last Decade

F.A. Lindholm

120 papers receiving 2.0k citations

Peers

Countries citing papers authored by F.A. Lindholm

Since Specialization

Citations

This map shows the geographic impact of F.A. Lindholm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.A. Lindholm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.A. Lindholm more than expected).

Fields of papers citing papers by F.A. Lindholm

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.A. Lindholm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.A. Lindholm. The network helps show where F.A. Lindholm may publish in the future.

Co-authors

The 25 scholars most cited alongside F.A. Lindholm, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F.A. Lindholm Line = papers co-authored together F.A. Lindholm links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 124 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Application of the superposition principle to solar-cell analysis IEEE Transactions on Electron Devices ·F.A. Lindholm, J.G. Fossum, Eric Burgess	1979	167
2	Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells IEEE Transactions on Electron Devices ·J.G. Fossum, F.A. Lindholm	1980	125
3	Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors IEEE Transactions on Electron Devices ·M.A. Shibib, F.A. Lindholm, F. Therez	1979	87
4	The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cells IEEE Transactions on Electron Devices ·J.G. Fossum, F.A. Lindholm, M.A. Shibib	1979	71
5	High current regimes in transistor collector regions IEEE Transactions on Electron Devices ·Darrin Bowler, F.A. Lindholm	1973	67
6	Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon IEEE Transactions on Electron Devices ·Jong‐Sik Park, A. Neugroschel, F.A. Lindholm	1986	61
7	Impurity concentration dependent density of states and resulting fermi level for silicon Solid-State Electronics ·D. Dale Kleppinger, F.A. Lindholm	1971	56
8	A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices IEEE Transactions on Electron Devices ·F.A. Lindholm, A. Neugroschel, Chih‐Tang Sah, M. P. Godlewski, Henry W. Brandhorst	1977	52
9	A method for determining energy gap narrowing in highly doped semiconductors IEEE Transactions on Electron Devices ·A. Neugroschel, S. C. Pao, F.A. Lindholm	1982	48
10	Heavily doped polysilicon-contact solar cells IEEE Electron Device Letters ·F.A. Lindholm, A. Neugroschel, M. Arienzo, P. A. Iles	1985	48
11	Forward-voltage capacitance and thickness of p-n junction space-charge regions IEEE Transactions on Electron Devices ·Juin J. Liou, F.A. Lindholm, J.S. Park	1987	47
12	A method for determining the emitter and base lifetimes in p-n junction diodes IEEE Transactions on Electron Devices ·A. Neugroschel, F.A. Lindholm, Chih‐Tang Sah	1977	47
13	Analytical and numerical modeling of amorphous silicon p-i-n solar cells Journal of Applied Physics ·Κ. Μισιάκος, F.A. Lindholm	1988	46
14	Generalized Einstein relation for degenerate semiconductors Proceedings of the IEEE ·F.A. Lindholm, R.W. Ayers	1968	46
15	Rigid band analysis of heavily doped semiconductor devices IEEE Transactions on Electron Devices ·Alan H. Marshak, M.A. Shibib, J.G. Fossum, F.A. Lindholm	1981	45
16	Fundamental electronic mechanisms limiting the performance of solar cells IEEE Transactions on Electron Devices ·F.A. Lindholm, Chih‐Tang Sah	1977	40
17	Diffusion length and lifetime determination in p-n junction solar cells and diodes by forward-biased capacitance measurements IEEE Transactions on Electron Devices ·A. Neugroschel, Pao-Jung Chen, Shing-Chong Pao, F.A. Lindholm	1978	39
18	Unifying view of transient responses for determining lifetime and surface recombination velocity in silicon diodes and back-surface-field solar cells, with application to experimental short-circuit-current decay IEEE Transactions on Electron Devices ·Taewon Jung, F.A. Lindholm, A. Neugroschel	1984	38
19	Generalized reciprocity theorem for semiconductor devices Journal of Applied Physics ·Κωνσταντίνος Μισιακός, F.A. Lindholm	1985	33
20	Silicon solar cell designs based on physical behavior in concentrated sunlight Solid-State Electronics ·J.G. Fossum, Eric Burgess, F.A. Lindholm	1978	33

About F.A. Lindholm

F.A. Lindholm is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Renewable Energy, Sustainability and the Environment and Biomedical Engineering, having authored 124 papers that have together received 2.2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (65 papers), Silicon and Solar Cell Technologies (64 papers), Semiconductor materials and interfaces (37 papers), Semiconductor materials and devices (30 papers), solar cell performance optimization (21 papers), Silicon Carbide Semiconductor Technologies (19 papers), Thin-Film Transistor Technologies (18 papers) and Semiconductor Quantum Structures and Devices (14 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Atomic and Molecular Physics, and Optics (973 citations), Nuclear Energy and Engineering (8 citations), Renewable Energy, Sustainability and the Environment (197 citations) and Materials Chemistry (364 citations). F.A. Lindholm has collaborated with scholars based in United States, Canada and Netherlands. Frequent co-authors include J.G. Fossum, A. Neugroschel, M.A. Shibib, Eric Burgess, Chih‐Tang Sah, Juin J. Liou, Douglas Hamilton, Κωνσταντίνος Μισιακός, C.D. Parikh and C. T. Sah. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Applied Physics, Solid-State Electronics, Proceedings of the IEEE and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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F.A. Lindholm

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