M. Darwish

1.4k total citations
49 papers, 1.0k citations indexed

About

M. Darwish is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Darwish has authored 49 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Darwish's work include Silicon Carbide Semiconductor Technologies (25 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Semiconductor materials and devices (24 papers). M. Darwish is often cited by papers focused on Silicon Carbide Semiconductor Technologies (25 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Semiconductor materials and devices (24 papers). M. Darwish collaborates with scholars based in United States, United Kingdom and China. M. Darwish's co-authors include K. Board, R.K. Williams, Richard Blanchard, Ralf Siemieniec, Yusuke Kawaguchi, Phil Rutter, M.R. Pinto, P. Zeitzoff, T.J. Krutsick and Don Disney and has published in prestigious journals such as Journal of Applied Physics, Nanoscale and IEEE Transactions on Electron Devices.

In The Last Decade

M. Darwish

45 papers receiving 945 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Darwish United States 14 984 87 51 51 38 49 1.0k
M. Trivedi United States 16 790 0.8× 51 0.6× 154 3.0× 29 0.6× 39 1.0× 65 839
Youngmin Kim South Korea 14 513 0.5× 47 0.5× 34 0.7× 59 1.2× 71 1.9× 52 536
Martin Pfost Germany 17 794 0.8× 51 0.6× 154 3.0× 32 0.6× 49 1.3× 111 835
É. Janssen Netherlands 12 543 0.6× 82 0.9× 38 0.7× 304 6.0× 23 0.6× 27 612
S. Pendharkar United States 18 903 0.9× 31 0.4× 149 2.9× 18 0.4× 28 0.7× 81 933
Noah Sturcken United States 10 374 0.4× 29 0.3× 28 0.5× 64 1.3× 24 0.6× 20 427
Gary M. Decad United States 9 248 0.3× 44 0.5× 20 0.4× 54 1.1× 36 0.9× 13 339
Josiane Tasselli France 9 217 0.2× 65 0.7× 39 0.8× 112 2.2× 29 0.8× 35 326
Y. Katsumata Japan 14 833 0.8× 263 3.0× 10 0.2× 94 1.8× 113 3.0× 69 880
Y. Watanabe Japan 13 557 0.6× 61 0.7× 20 0.4× 78 1.5× 25 0.7× 54 606

Countries citing papers authored by M. Darwish

Since Specialization
Citations

This map shows the geographic impact of M. Darwish's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Darwish with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Darwish more than expected).

Fields of papers citing papers by M. Darwish

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Darwish. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Darwish. The network helps show where M. Darwish may publish in the future.

Co-authorship network of co-authors of M. Darwish

This figure shows the co-authorship network connecting the top 25 collaborators of M. Darwish. A scholar is included among the top collaborators of M. Darwish based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Darwish. M. Darwish is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jin, Rui, Li Li, Jun Zeng, et al.. (2021). Process Improvement for Stabilizing the VLD Effective Dose of 4500V Trench-Gated IGBT Platform. 1–3. 1 indexed citations
2.
3.
Yu, Xiaoxiao, Minyoung Jeong, M. Darwish, et al.. (2019). Impact of metal adhesion layer diffusion on thermal interface conductance. Physical review. B.. 99(11). 5 indexed citations
4.
Williams, R.K., M. Darwish, Richard Blanchard, et al.. (2017). The Trench Power MOSFET: Part I—History, Technology, and Prospects. IEEE Transactions on Electron Devices. 64(3). 674–691. 203 indexed citations
5.
Darwish, M., et al.. (2015). Analog neuromorphic computing enabled by multi-gate programmable resistive devices. Design, Automation, and Test in Europe. 928–931. 2 indexed citations
6.
Darwish, M., et al.. (2002). On resistance-leakage current trade-off in low-voltage power PMOSFETs. 261–266. 1 indexed citations
7.
Disney, Don, et al.. (2002). A new 800 V lateral MOSFET with dual conduction paths. 399–402. 99 indexed citations
8.
Shekar, M.S., et al.. (1998). Hot electron degradation and unclamped inductive switching in submicron 60-V lateral DMOS. 383–390. 7 indexed citations
9.
Lloyd, Peter, Colin C. McAndrew, Michael McLennan, et al.. (1995). Technology CAD at AT&T. Microelectronics Journal. 26(2-3). 79–97. 9 indexed citations
10.
Darwish, M.. (1990). A new lateral MOS-controlled thyristor. IEEE Electron Device Letters. 11(6). 256–257. 11 indexed citations
11.
Darwish, M., et al.. (1988). Radiation effects on power integrated circuits. IEEE Transactions on Nuclear Science. 35(6). 1547–1551. 11 indexed citations
12.
Darwish, M.. (1987). DC and Transient Analysis of Lateral Insulated Gate Conductivity Modulated Transistors. ECS Proceedings Volumes. 1987-13(1). 295–309. 1 indexed citations
13.
14.
Board, K. & M. Darwish. (1985). LDMOS transistors with implanted and deposited surface layers. IEE Proceedings I Solid State and Electron Devices. 132(4). 177–177. 5 indexed citations
15.
Darwish, M. & K. Board. (1984). Lateral resurfed COMFET. Electronics Letters. 20(12). 519–520. 69 indexed citations
16.
Darwish, M. & K. Board. (1984). Optimization of breakdown voltage and on-resistance of VDMOS transistors. IEEE Transactions on Electron Devices. 31(12). 1769–1773. 16 indexed citations
17.
Darwish, M. & K. Board. (1984). Theory of switching in polysilicon n-p+ structures. Solid-State Electronics. 27(8-9). 775–783. 10 indexed citations
18.
Board, K. & M. Darwish. (1982). A new form of two-state switching device, using a bulk semiconductor barrier. Solid-State Electronics. 25(7). 571–575. 14 indexed citations
19.
Darwish, M. & K. Board. (1981). Theory of switching in MISIM structures. IEE Proceedings I Solid State and Electron Devices. 128(5). 165–165. 2 indexed citations
20.
Darwish, M. & K. Board. (1981). Experimental observation of switching in MISM and MISIM devices. IEE Proceedings I Solid State and Electron Devices. 128(5). 161–161. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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