J.-P. Noël

1.3k citations

50 papers · 958 · h-index 15

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 41
- Semiconductor materials and devices 23
- Advancements in Semiconductor Devices and Circuit Design 11
- Thin-Film Transistor Technologies 7
- Silicon and Solar Cell Technologies 7
Atomic and Molecular Physics, and Optics 28
- Semiconductor Quantum Structures and Devices 18
- Semiconductor materials and interfaces 12

Co-authors: D. C. Houghton (23 shared papers)N. L. Rowell (21 shared papers)L. C. Lenchyshyn (8 shared papers)Doug D. Perovic (4 shared papers)James C. Sturm (6 shared papers)M. L. W. Thewalt (2 shared papers)Hari C. Manoharan (2 shared papers)T. Manku (2 shared papers)
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)Journal of Electronic Materials (3 papers)Physical review. B, Condensed matter (3 papers)Materials Science and Engineering B (2 papers)
Partner nations: Canada United States France

In The Last Decade

J.-P. Noël

49 papers receiving 909 citations

Peers

Countries citing papers authored by J.-P. Noël

Since Specialization

Citations

This map shows the geographic impact of J.-P. Noël's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-P. Noël with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-P. Noël more than expected).

Fields of papers citing papers by J.-P. Noël

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-P. Noël. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-P. Noël. The network helps show where J.-P. Noël may publish in the future.

Co-authors

The 25 scholars most cited alongside J.-P. Noël, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.-P. Noël Line = papers co-authored together J.-P. Noël links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 50 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells Physical Review Letters ·James C. Sturm, Hari C. Manoharan, L. C. Lenchyshyn, M. L. W. Thewalt, N. L. Rowell, J.-P. Noël, D. C. Houghton	1991	233
2	Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys Applied Physics Letters ·J.-P. Noël, N. L. Rowell, D. C. Houghton, Doug D. Perovic	1990	129
3	Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys IEEE Transactions on Electron Devices ·T. Manku, J.M. McGregor, Arokia Nathan, D.J. Roulston, J.-P. Noël, D.C. Houghton	1993	78
4	Luminescence origins in molecular beam epitaxial Si1−xGex Applied Physics Letters ·J.-P. Noël, N. L. Rowell, D. C. Houghton, A. Wang, Doug D. Perovic	1992	62
5	High quantum efficiency photoluminescence from localized excitons in Si1−xGex Applied Physics Letters ·L. C. Lenchyshyn, M. L. W. Thewalt, James C. Sturm, Peter Schwartz, E.J. Prinz, N. L. Rowell, J.-P. Noël, D. C. Houghton	1992	57
6	New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors Solid-State Electronics ·Sorin P. Voinigescu, K. Iniewski, R. Lisak, C.A.T. Salama, J.-P. Noël, D.C. Houghton	1994	44
7	Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon Physical review. B, Condensed matter ·D. D. Perovic, G. C. Weatherly, P. J. Simpson, Peter J. Schultz, T. E. Jackman, G. C. Aers, J.-P. Noël, D. C. Houghton	1991	40
8	Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110) Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·L. J. Huang, K. Rajesh, W. M. Lau, S. Ingrey, D. Landheer, J.-P. Noël, Z. H. Lu	1995	25
9	Photoluminescence mechanisms in thinSi1−xGexquantum wells Physical review. B, Condensed matter ·L. C. Lenchyshyn, M. L. W. Thewalt, D. C. Houghton, J.-P. Noël, N. L. Rowell, J. C. Sturm, X. Xiao	1993	24
10	Theory and observation of enhanced, high field hole transport in Si/sub 1-x/Ge/sub x/ quantum well p-MOSFETs IEEE Transactions on Electron Devices ·K. Bhaumik, Yosi Shacham‐Diamand, J.-P. Noël, J. Bevk, L. C. Feldman	1996	17
11	Visible photoluminescence from biexcitons in Si1-xGex quantum wells Solid State Communications ·T. Steiner, L. C. Lenchyshyn, M. L. W. Thewalt, J.-P. Noël, N. L. Rowell, D. C. Houghton	1994	17
12	Si/SiGe digital optoelectronic switch IEEE Electron Device Letters ·S. Kovacic, J.G. Simmons, Kai Song, J.-P. Noël, D. C. Houghton	1991	17
13	Elastic relaxation of dry-etched Si/SiGe quantum dots Physical review. B, Condensed matter ·Anton A. Darhuber, Thomas Grill, J. Stangl, G. Bauer, D. J. Lockwood, J.-P. Noël, P. D. Wang, (unknown)	1998	17
14	Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. D. Perovic, G. C. Weatherly, J.-P. Noël, D. C. Houghton	1991	16
15	UT2B-FDSOI device architecture dedicated to low power design techniques J.-P. Noël, Olivier Thomas, M.-A. Jaud, C. Fenouillet-Béranger, P. Rivallin, P. Scheiblin, T. Poiroux, F. Bœuf, F. Andrieu, O. Weber, O. Faynot, Ayed Ben Amara	2010	15
16	Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex Journal of Electronic Materials ·J.M. McGregor, T. Manku, J.-P. Noël, D.J. Roulston, Arokia Nathan, D. C. Houghton	1993	13
17	Si-Based Photonic Devices by MBE MRS Proceedings ·D. C. Houghton, J.-P. Noël, N. L. Rowell	1991	12
18	3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing SPIRE - Sciences Po Institutional REpository ·Sylvain Barraud, M. Ezzadeen, D. Bosch, T. Dubreuil, N. Castellani, V. Meli, Jean‐Michel Hartmann, M. Mouhdach, B. Prévitali, Bastien Giraud, J.-P. Noël, G. Molas, Jean‐Michel Portal, E. Nowak, F. Andrieu	2020	12
19	Photoluminescence spectroscopy of localized excitons in Si1−xGex Journal of Electronic Materials ·L. C. Lenchyshyn, M. L. W. Thewalt, James C. Sturm, Peter Schwartz, N. L. Rowell, J.-P. Noël, D. C. Houghton	1993	11
20	Electroluminescence and photoluminescence from Si1−xGex alloys grown on (100) silicon by molecular beam epitaxy Materials Science and Engineering B ·D. C. Houghton, J.-P. Noël, N. L. Rowell	1991	9

About J.-P. Noël

J.-P. Noël is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Computational Mechanics, having authored 50 papers that have together received 958 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Silicon Nanostructures and Photoluminescence (23 papers), Semiconductor Quantum Structures and Devices (18 papers), Semiconductor materials and interfaces (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Nanowire Synthesis and Applications (9 papers), Thin-Film Transistor Technologies (7 papers) and Silicon and Solar Cell Technologies (7 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (567 citations), Electrical and Electronic Engineering (770 citations), Materials Chemistry (520 citations), Biomedical Engineering (219 citations) and Condensed Matter Physics (27 citations). J.-P. Noël has collaborated with scholars based in Canada, United States and France. Frequent co-authors include D. C. Houghton, N. L. Rowell, L. C. Lenchyshyn, Doug D. Perovic, James C. Sturm, M. L. W. Thewalt, Hari C. Manoharan, T. Manku, Arokia Nathan and J.M. McGregor. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, Physical review. B, Condensed matter and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J.-P. Noël

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