J.-P. Noël

1.3k total citations
50 papers, 958 citations indexed

About

J.-P. Noël is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.-P. Noël has authored 50 papers receiving a total of 958 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in J.-P. Noël's work include Semiconductor materials and devices (23 papers), Silicon Nanostructures and Photoluminescence (23 papers) and Semiconductor Quantum Structures and Devices (18 papers). J.-P. Noël is often cited by papers focused on Semiconductor materials and devices (23 papers), Silicon Nanostructures and Photoluminescence (23 papers) and Semiconductor Quantum Structures and Devices (18 papers). J.-P. Noël collaborates with scholars based in Canada, United States and France. J.-P. Noël's co-authors include D. C. Houghton, N. L. Rowell, L. C. Lenchyshyn, Doug D. Perovic, James C. Sturm, M. L. W. Thewalt, Hari C. Manoharan, T. Manku, J.M. McGregor and D.J. Roulston and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J.-P. Noël

49 papers receiving 909 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.-P. Noël Canada 15 770 567 520 219 36 50 958
G. Glass United States 10 967 1.3× 376 0.7× 214 0.4× 281 1.3× 43 1.2× 15 1.1k
Y. H. Xie United States 14 1.1k 1.5× 870 1.5× 414 0.8× 277 1.3× 45 1.3× 32 1.4k
Hideki Tsuya Japan 17 753 1.0× 271 0.5× 333 0.6× 140 0.6× 44 1.2× 46 820
E. Wintersberger Austria 13 442 0.6× 418 0.7× 279 0.5× 298 1.4× 28 0.8× 24 694
H. Heidemeyer Germany 11 399 0.5× 449 0.8× 255 0.5× 197 0.9× 15 0.4× 13 604
G. Brill United States 18 765 1.0× 500 0.9× 244 0.5× 59 0.3× 22 0.6× 68 819
A. Steckenborn Germany 12 374 0.5× 331 0.6× 126 0.2× 182 0.8× 29 0.8× 18 545
H. Lafontaine Canada 14 405 0.5× 318 0.6× 178 0.3× 84 0.4× 34 0.9× 55 524
C. W. Leitz United States 21 2.1k 2.7× 900 1.6× 371 0.7× 558 2.5× 29 0.8× 46 2.2k
Jianrong Dong China 14 504 0.7× 333 0.6× 210 0.4× 115 0.5× 28 0.8× 60 582

Countries citing papers authored by J.-P. Noël

Since Specialization
Citations

This map shows the geographic impact of J.-P. Noël's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-P. Noël with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-P. Noël more than expected).

Fields of papers citing papers by J.-P. Noël

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-P. Noël. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-P. Noël. The network helps show where J.-P. Noël may publish in the future.

Co-authorship network of co-authors of J.-P. Noël

This figure shows the co-authorship network connecting the top 25 collaborators of J.-P. Noël. A scholar is included among the top collaborators of J.-P. Noël based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.-P. Noël. J.-P. Noël is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Noël, J.-P., et al.. (2023). A High Efficiency Wireless Power Transfer Drone Coil Structure for Interoperability and Robust Misalignment. The Journal of Korean Institute of Electromagnetic Engineering and Science. 34(5). 385–398. 1 indexed citations
2.
Noël, J.-P., Bastien Giraud, Édith Beigné, et al.. (2016). High density SRAM bitcell architecture in 3D sequential CoolCube™ 14nm technology. 27. 1–3. 7 indexed citations
3.
Voinigescu, Sorin P., C.A.T. Salama, J.-P. Noël, & T. I. Kamins. (2002). Optimized Ge channel profiles for VLSI compatible Si/SiGe p-MOSFET's. 369–372. 4 indexed citations
4.
Shacham‐Diamand, Yosi, et al.. (1996). Theory and observation of enhanced, high field hole transport in Si/sub 1-x/Ge/sub x/ quantum well p-MOSFETs. IEEE Transactions on Electron Devices. 43(11). 1965–1971. 17 indexed citations
5.
Noël, J.-P., N. L. Rowell, & J. E. Greene. (1995). Photoluminescence from Si(001) films doped with 100–1000 eV B+ ions during deposition by molecular beam epitaxy. Journal of Applied Physics. 77(9). 4623–4631. 5 indexed citations
6.
Voinigescu, Sorin P., C.A.T. Salama, J.-P. Noël, & T. I. Kamins. (1994). Si/SiGe Heterostructure p-MOSFET with Triangular Ge Channel Profiles. European Solid-State Device Research Conference. 143–146. 1 indexed citations
7.
Huang, L. J., Woon‐Ming Lau, S. Ingrey, D. Landheer, & J.-P. Noël. (1994). Metal-insulator-semiconductor capacitors on cleaved GaAs(110). Journal of Applied Physics. 76(12). 8192–8194. 8 indexed citations
8.
Noël, J.-P., et al.. (1993). Phonon-resolved and broad photoluminescence in strained Si1−xGex alloy MBE layers. Journal of Electronic Materials. 22(7). 739–743. 4 indexed citations
9.
Houghton, D. C., N. L. Rowell, J.-P. Noël, et al.. (1993). SiGe/Si Quantum Wells by MBE : A Photoluminesence Study. MRS Proceedings. 298. 3 indexed citations
10.
Steiner, T., L. C. Lenchyshyn, M. L. W. Thewalt, et al.. (1993). Visible Photoluminescence from SI1-xGEx Quantum Wells. MRS Proceedings. 298. 2 indexed citations
11.
Lenchyshyn, L. C., M. L. W. Thewalt, D. C. Houghton, et al.. (1993). Photoluminescence mechanisms in thinSi1−xGexquantum wells. Physical review. B, Condensed matter. 47(24). 16655–16658. 24 indexed citations
12.
Lenchyshyn, L. C., M. L. W. Thewalt, D. C. Houghton, et al.. (1993). Photoluminescence of Thin SI1-xGEx Quantum Wells. MRS Proceedings. 298. 3 indexed citations
13.
Simmons, J.G., et al.. (1992). Inversion-channel Si/SiGe heterojunction field-effect transistor. Electronics Letters. 28(24). 2234–2235. 2 indexed citations
14.
Lenchyshyn, L. C., M. L. W. Thewalt, James C. Sturm, et al.. (1992). High quantum efficiency photoluminescence from localized excitons in Si1−xGex. Applied Physics Letters. 60(25). 3174–3176. 57 indexed citations
15.
Perovic, D. D., G. C. Weatherly, P. J. Simpson, et al.. (1991). Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon. Physical review. B, Condensed matter. 43(17). 14257–14260. 40 indexed citations
16.
Sturm, James C., Peter Schwartz, Hari C. Manoharan, et al.. (1991). Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition. MRS Proceedings. 220. 2 indexed citations
17.
Perovic, D. D., G. C. Weatherly, J.-P. Noël, & D. C. Houghton. (1991). Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(4). 2034–2038. 16 indexed citations
18.
Simpson, P. J., Peter J. Schultz, T. E. Jackman, et al.. (1991). Evidence for void formation in MBE-grown silicon. AIP conference proceedings. 218. 125–128. 3 indexed citations
19.
Rowell, N. L., J.-P. Noël, D. C. Houghton, & D. D. Perovic. (1990). Photoluminescence from Coherently Strained Si1−xGex Alloys. MRS Proceedings. 198. 1 indexed citations
20.
Noël, J.-P., N. L. Rowell, D. C. Houghton, & Doug D. Perovic. (1990). Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys. Applied Physics Letters. 57(10). 1037–1039. 129 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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