K.-Y. Hsiang

413 citations
31 papers · 310 · h-index 10

Impact in

  • Electrical and Electronic Engineering
    • Ferroelectric and Negative Capacitance Devices
    • Semiconductor materials and devices
    • Advanced Memory and Neural Computing
    • Advancements in Semiconductor Devices and Circuit Design
  • Materials Chemistry
    • MXene and MAX Phase Materials
    • Ferroelectric and Piezoelectric Materials
    • Electronic and Structural Properties of Oxides
    • 2D Materials and Applications

Papers in

  • Electrical and Electronic Engineering 30
    • Ferroelectric and Negative Capacitance Devices 28
    • Advanced Memory and Neural Computing 17
    • Semiconductor materials and devices 16
    • Advancements in Semiconductor Devices and Circuit Design 2
  • Materials Chemistry 20
    • MXene and MAX Phase Materials 12
    • Ferroelectric and Piezoelectric Materials 7
Co-authors
M. H. Lee (31 shared papers)C.-Y. Liao (18 shared papers)Tuo‐Hung Hou (11 shared papers)C. S. Chang (4 shared papers)Cheng-Hung Lin (2 shared papers)Zaizhu Lou (10 shared papers)C. W. Liu (11 shared papers)Pin Su (9 shared papers)
Journals
IEEE Electron Device Letters (6 papers)IEEE Transactions on Electron Devices (5 papers)Journal of Computational Electronics (1 paper)Applied Physics Letters (1 paper)ACS Applied Materials & Interfaces (1 paper)
Partner nations
TaiwanSwitzerlandUnited States

In The Last Decade

K.-Y. Hsiang

30 papers receiving 302 citations

Peers

K.-Y. Hsiang
Comparison fields: 5 of 18
  • Electrical and Electronic Engineering 303
  • Materials Chemistry 139
  • Hardware and Architecture 3
  • Electronic, Optical and Magnetic Materials 8
  • Biomedical Engineering 16
Replace Goedele Potoms with:
Goedele Potoms Belgium
Giuk Kim South Korea
D. A. Lohr Germany
Ruben Alcala Germany
Sukhrob Abdulazhanov Germany
Kun Hee Ye South Korea
Karine Florent Belgium
Bernhard Stampfer Austria
Carlos Márquez Spain
Jesús Calvo Germany
K.-Y. Hsiang relative to Goedele Potoms Belgium Goedele Potoms's profile →
Citations per field
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Citations per year

Countries citing papers authored by K.-Y. Hsiang

Since Specialization
Citations

This map shows the geographic impact of K.-Y. Hsiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.-Y. Hsiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.-Y. Hsiang more than expected).

Fields of papers citing papers by K.-Y. Hsiang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.-Y. Hsiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.-Y. Hsiang. The network helps show where K.-Y. Hsiang may publish in the future.

Co-authors

The 25 scholars most cited alongside K.-Y. Hsiang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.-Y. Hsiang Line = papers co-authored together K.-Y. Hsiang links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 31 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory
IEEE Electron Device Letters ·C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh, S.-H. Chiang, S.-H. Chang, Jun Liu, C.-F. Lou, Cheng-Hung Lin, T.-C. Chen, C. S. Chang, M. H. Lee
202165
2
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
IEEE Transactions on Electron Devices ·K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, Y.-Y. Lin, C.-Y. Chueh, Chih‐Wei Chang, Yi‐Ju Tseng, Y.-J. Yang, S. T. Chang, Ming-Han Liao, Tuo‐Hung Hou, Cheng‐Hsien Wu, Chih-Chao Ho, J.P. Chiu, C. S. Chang, M. H. Lee
202049
3
Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory
IEEE Electron Device Letters ·K.-Y. Hsiang, C.-Y. Liao, Jun Liu, J.-F. Wang, S.-H. Chiang, S.-H. Chang, Fan-Chun Hsieh, H. Liang, Chun‐Yu Lin, Zaizhu Lou, Tuo‐Hung Hou, C. W. Liu, M. H. Lee
202125
4
Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory
IEEE Electron Device Letters ·Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang, Chia-Feng Wu, Hao-Tung Chung, Wei-Shuo Li, C.-Y. Liao, Pin-Guang Chen, Kuan‐Neng Chen, M. H. Lee, Huang‐Chung Cheng
202120
5
Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·C.-Y. Liao, K.-Y. Hsiang, Zaizhu Lou, Hsien‐Cheng Tseng, Cheng-Hung Lin, Z.-X. Li, Fan-Chun Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Yang-Yan Tseng, S. T. Chang, T.-C. Chen, M. H. Lee
202218
6
Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM
2022 International Electron Devices Meeting (IEDM) ·C.-Y. Liao, Zhonghao Lou, Chin‐An Lin, A. Senapati, Rajdip Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, Jia-Yang Lee, Ping‐Hung Chen, F.-S. Chang, Hsin-Chun Tseng, C.-C. Wang, Jeng‐Han Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu, S. Maikap, M. H. Lee
202215
7
NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
2021 IEEE International Electron Devices Meeting (IEDM) ·Yu‐Chen Chen, K.-Y. Hsiang, Ying–Tsan Tang, M. H. Lee, Pin Su
202114
8
Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance
2022 International Electron Devices Meeting (IEDM) ·K.-Y. Hsiang, Yu‐Chun Chen, F.-S. Chang, Chun‐Yu Lin, C.-Y. Liao, Zaizhu Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, Hsien‐Cheng Tseng, Ping‐Hung Chen, Jeng‐Han Tsai, Ming-Han Liao, Tuo‐Hung Hou, Cheng‐Hong Liu, Pin-Man Huang, Pin Su, M. H. Lee
202210
9
Correlation between Access Polarization and High Endurance (˜ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2
K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Zaizhu Lou, Chun‐Yu Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, Hsien‐Cheng Tseng, C.-C. Wang, W.-C. Ray, Tuo‐Hung Hou, T.-C. Chen, C. S. Chang, M. H. Lee
202210
10
Ferroelectric Undoped HfO x Capacitor With Symmetric Synaptic for Neural Network Accelerator
IEEE Transactions on Electron Devices ·Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang, Chia-Feng Wu, (unknown), Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, C.-Y. Liao, Pin-Guang Chen, Kuan‐Neng Chen, M. H. Lee, Huang‐Chung Cheng
20219
11
Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down
Applied Physics Letters ·C.-Y. Liao, Chen-Ying Lin, Zhi-Xian Lee, K.-Y. Hsiang, Zhao-Feng Lou, Vita Pi‐Ho Hu, M. H. Lee
20228
12
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes
Nanomaterials ·K.-Y. Hsiang, C.-Y. Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, S.-H. Chiang, C. W. Liu, Tuo‐Hung Hou, M. H. Lee
20217
13
Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM
IEEE Transactions on Electron Devices ·K.-Y. Hsiang, J.-Y. Lee, Zaizhu Lou, F.-S. Chang, Yu‐Chun Chen, Z.-X. Li, Ming-Han Liao, C. W. Liu, Tuo‐Hung Hou, Pin Su, M. H. Lee
20237
14
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations
K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Zaizhu Lou, Z.-X. Li, Zhixian Li, Jianhao Chen, C. W. Liu, Tuo‐Hung Hou, M. H. Lee
20236
15
Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture
IEEE Electron Device Letters ·K.-Y. Hsiang, C.-Y. Liao, Jun Liu, Chun‐Yu Lin, J.-Y. Lee, Zaizhu Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, Hsien‐Cheng Tseng, C.-C. Wang, Ming-Han Liao, Tuo‐Hung Hou, M. H. Lee
20226
16
Super-Lamination HZO/ZrO₂/HZO of Ferroelectric Memcapacitors With Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-Destructive Readout
IEEE Electron Device Letters ·Zhenxiu Lou, B.-R. Chen, K.-Y. Hsiang, Yii-Tay Chang, Cheng‐Hsien Liu, Hsien‐Cheng Tseng, Han-Tsung Liao, Pin Su, M. H. Lee
20245
17
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs
J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, Ping‐Hung Chen, Z.-F. Luo, Z.-X. Li, Jeng‐Han Tsai, C. W. Liu, M. H. Lee
20235
18
Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO 2 Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory
ECS Journal of Solid State Science and Technology ·C.-Y. Liao, K.-Y. Hsiang, S.-H. Chang, S.-H. Chiang, Fan-Chun Hsieh, J.-H. Liu, H. Liang, Z.-F. Luo, Chun‐Yu Lin, Lu-Hsun Chen, Vita Pi‐Ho Hu, M. H. Lee
20214
19
Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications
K.-Y. Hsiang, J.-Y. Lee, Zaizhu Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, Tuo‐Hung Hou, Pin Su, M. H. Lee
20234
20
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Hsien-Tsung Chiang, Jia Wang, K. -H. Lin, Chih‐Hung Nien, Jun Wu, K.-Y. Hsiang, Chih‐Piao Chuu, Yiwen Chen, Xiaziyu Zhang, C. W. Liu, Tahui Wang, C. -C. Wang, M. H. Lee, M. F. Chang, C. S. Chang, Tao Chen
20223

About K.-Y. Hsiang

K.-Y. Hsiang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Surgery and Atomic and Molecular Physics, and Optics, having authored 31 papers that have together received 310 indexed citations. Recurring topics across this work include Ferroelectric and Negative Capacitance Devices (28 papers), Advanced Memory and Neural Computing (17 papers), Semiconductor materials and devices (16 papers), MXene and MAX Phase Materials (12 papers), Ferroelectric and Piezoelectric Materials (7 papers), Acoustic Wave Resonator Technologies (2 papers), Advancements in Semiconductor Devices and Circuit Design (2 papers) and Advanced Sensor and Energy Harvesting Materials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (303 citations), Materials Chemistry (139 citations), Hardware and Architecture (3 citations), Electronic, Optical and Magnetic Materials (8 citations) and Biomedical Engineering (16 citations). K.-Y. Hsiang has collaborated with scholars based in Taiwan, Switzerland and United States. Frequent co-authors include M. H. Lee, C.-Y. Liao, Tuo‐Hung Hou, C. S. Chang, Cheng-Hung Lin, Zaizhu Lou, C. W. Liu, Pin Su, S. T. Chang and Ming-Han Liao. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Computational Electronics, Applied Physics Letters and ACS Applied Materials & Interfaces.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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