Kun Hee Ye

448 total citations
15 papers, 227 citations indexed

About

Kun Hee Ye is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Kun Hee Ye has authored 15 papers receiving a total of 227 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Materials Chemistry, 13 papers in Electrical and Electronic Engineering and 2 papers in Biomedical Engineering. Recurrent topics in Kun Hee Ye's work include Semiconductor materials and devices (8 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and MXene and MAX Phase Materials (5 papers). Kun Hee Ye is often cited by papers focused on Semiconductor materials and devices (8 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and MXene and MAX Phase Materials (5 papers). Kun Hee Ye collaborates with scholars based in South Korea, Puerto Rico and Singapore. Kun Hee Ye's co-authors include Cheol Seong Hwang, Jung‐Hae Choi, Min Hyuk Park, Yunzhe Zheng, Kan‐Hao Xue, Yan Cheng, Jianfeng Gao, Yonghui Zheng, Zhaomeng Gao and Hyeon Woo Park and has published in prestigious journals such as Nature Communications, Advanced Functional Materials and Nanoscale.

In The Last Decade

Kun Hee Ye

14 papers receiving 222 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kun Hee Ye South Korea 5 198 186 29 11 7 15 227
Nujhat Tasneem United States 12 372 1.9× 226 1.2× 30 1.0× 6 0.5× 7 1.0× 32 392
Jesús Calvo Germany 4 363 1.8× 230 1.2× 23 0.8× 7 0.6× 7 1.0× 8 382
Thomas Szyjka Germany 8 364 1.8× 306 1.6× 10 0.3× 6 0.5× 9 1.3× 11 380
Cameron J. Foss United States 9 70 0.4× 355 1.9× 27 0.9× 8 0.7× 10 1.4× 17 375
T. Lenz Germany 2 85 0.4× 94 0.5× 31 1.1× 10 0.9× 25 3.6× 2 129
Joy S. Lee United States 7 492 2.5× 392 2.1× 17 0.6× 19 1.7× 19 2.7× 8 508
Ruben Alcala Germany 9 228 1.2× 167 0.9× 16 0.6× 8 0.7× 7 1.0× 17 235
Takashi Onaya Japan 12 382 1.9× 293 1.6× 15 0.5× 5 0.5× 12 1.7× 33 385
Arnab K. Majee United States 8 57 0.3× 323 1.7× 32 1.1× 13 1.2× 6 0.9× 10 339
Walter Kleemeier United States 6 224 1.1× 101 0.5× 29 1.0× 6 0.5× 9 1.3× 10 237

Countries citing papers authored by Kun Hee Ye

Since Specialization
Citations

This map shows the geographic impact of Kun Hee Ye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kun Hee Ye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kun Hee Ye more than expected).

Fields of papers citing papers by Kun Hee Ye

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kun Hee Ye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kun Hee Ye. The network helps show where Kun Hee Ye may publish in the future.

Co-authorship network of co-authors of Kun Hee Ye

This figure shows the co-authorship network connecting the top 25 collaborators of Kun Hee Ye. A scholar is included among the top collaborators of Kun Hee Ye based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kun Hee Ye. Kun Hee Ye is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Ye, Kun Hee, et al.. (2025). Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO 2 and ZrO 2. Advanced Functional Materials. 36(20).
2.
Lee, Jae Hoon, Kun Hee Ye, Kyung Do Kim, et al.. (2025). Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfNx interfacial layer. Journal of Materials Chemistry C. 13(19). 9705–9716. 2 indexed citations
3.
4.
Jeong, Tae-Young, et al.. (2024). Study of a charge transition-driven resistive switching mechanism in TiO2-based random access memory via density functional theory. Nanoscale. 16(14). 6949–6960. 3 indexed citations
5.
Shin, Jonghoon, Dong Hoon Shin, Kyung Do Kim, et al.. (2024). Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films. Journal of Materials Chemistry C. 12(38). 15423–15434. 2 indexed citations
6.
Shin, Jonghoon, Kun Hee Ye, Yoon Ho Jang, et al.. (2024). Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers. Journal of Materials Chemistry C. 12(14). 5035–5046. 8 indexed citations
7.
8.
Ye, Kun Hee, Tae Kyun Kim, Jong Hoon Shin, et al.. (2023). Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution. ACS Applied Electronic Materials. 5(8). 4187–4197. 1 indexed citations
9.
Cheng, Yan, Zhaomeng Gao, Kun Hee Ye, et al.. (2022). Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nature Communications. 13(1). 645–645. 151 indexed citations
10.
Ye, Kun Hee, et al.. (2022). Atomistic prediction on the composition- and configuration-dependent bandgap of Ga(As,Sb) using cluster expansion and ab initio thermodynamics. Materials Science and Engineering B. 280. 115713–115713. 2 indexed citations
11.
Ye, Kun Hee, et al.. (2021). Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice. physica status solidi (RRL) - Rapid Research Letters. 15(5). 2 indexed citations
12.
Ye, Kun Hee, et al.. (2021). InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework. Computer Physics Communications. 268. 108089–108089. 4 indexed citations
13.
Ye, Kun Hee, et al.. (2021). Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice. physica status solidi (RRL) - Rapid Research Letters. 15(5). 24 indexed citations
14.
Park, Jaehong, et al.. (2020). Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As. Journal of Physics D Applied Physics. 54(4). 45104–45104. 4 indexed citations
15.
Ye, Kun Hee, et al.. (2020). Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κdielectric layer. Journal of Materials Chemistry C. 9(3). 851–859. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026