W. Kopp

2.9k total citations
89 papers, 2.2k citations indexed

About

W. Kopp is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W. Kopp has authored 89 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 80 papers in Electrical and Electronic Engineering, 68 papers in Atomic and Molecular Physics, and Optics and 16 papers in Condensed Matter Physics. Recurrent topics in W. Kopp's work include Semiconductor Quantum Structures and Devices (60 papers), Semiconductor materials and devices (57 papers) and Advancements in Semiconductor Devices and Circuit Design (38 papers). W. Kopp is often cited by papers focused on Semiconductor Quantum Structures and Devices (60 papers), Semiconductor materials and devices (57 papers) and Advancements in Semiconductor Devices and Circuit Design (38 papers). W. Kopp collaborates with scholars based in United States and Canada. W. Kopp's co-authors include H. Morkoç̌, R. Fischer, T. J. Drummond, John F. Klem, T. Henderson, W. T. Masselink, R. E. Thorne, Paul D. Coleman, A. Ketterson and M. Keever and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

W. Kopp

88 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Kopp United States 26 1.9k 1.7k 313 214 149 89 2.2k
J. M. Ballingall United States 23 1.6k 0.8× 1.2k 0.7× 225 0.7× 289 1.4× 119 0.8× 85 1.8k
C. M. Knoedler United States 20 999 0.5× 1.4k 0.8× 383 1.2× 155 0.7× 72 0.5× 43 1.7k
C. M. Wolfe United States 25 1.5k 0.8× 1.7k 1.0× 264 0.8× 448 2.1× 202 1.4× 64 2.1k
B. Brar United States 24 1.6k 0.9× 1.3k 0.7× 250 0.8× 431 2.0× 197 1.3× 100 1.9k
D. R. Leadley United Kingdom 25 1.5k 0.8× 1.7k 1.0× 463 1.5× 374 1.7× 310 2.1× 161 2.3k
A. Million France 22 1.2k 0.6× 997 0.6× 170 0.5× 420 2.0× 95 0.6× 66 1.4k
P. W. Yu United States 23 1.0k 0.5× 1.3k 0.8× 284 0.9× 457 2.1× 107 0.7× 109 1.6k
T. Henderson United States 26 2.2k 1.2× 2.3k 1.3× 415 1.3× 358 1.7× 210 1.4× 114 2.8k
V. M. Robbins United States 16 1.0k 0.5× 764 0.4× 324 1.0× 135 0.6× 101 0.7× 30 1.2k
P. Frijlink France 18 812 0.4× 700 0.4× 290 0.9× 185 0.9× 80 0.5× 46 1.1k

Countries citing papers authored by W. Kopp

Since Specialization
Citations

This map shows the geographic impact of W. Kopp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Kopp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Kopp more than expected).

Fields of papers citing papers by W. Kopp

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Kopp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Kopp. The network helps show where W. Kopp may publish in the future.

Co-authorship network of co-authors of W. Kopp

This figure shows the co-authorship network connecting the top 25 collaborators of W. Kopp. A scholar is included among the top collaborators of W. Kopp based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Kopp. W. Kopp is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kopp, W., et al.. (2002). 4 GHz high-power high-efficiency pseudomorphic power HEMT. 1469–1472. 7 indexed citations
2.
Rogers, T. J., et al.. (1996). Pseudomorphic high-electron-mobility transistors with low-temperature-grown GaAs buffers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2236–2239. 2 indexed citations
3.
Smith, P.M., W. Kopp, P. Ho, et al.. (1991). Ku-band high efficiency high gain pseudomorphic HEMT. Electronics Letters. 27(3). 270–271. 12 indexed citations
4.
Gering, J., et al.. (1987). A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies. Journal of Applied Physics. 61(1). 271–276. 74 indexed citations
5.
Masselink, W. T., T. Henderson, John F. Klem, W. Kopp, & H. Morkoç̌. (1986). The dependence of 77 K electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures. IEEE Transactions on Electron Devices. 33(5). 639–645. 22 indexed citations
6.
Salour, M. M., et al.. (1986). Optically pumped tunable mode-locked Si-doped GaAs laser. Applied Physics Letters. 49(3). 119–121. 2 indexed citations
7.
Das, M.B., et al.. (1985). Determination of 2-D Electron-gas carrier mobility in short gate-length MODFET's by direct elimination of parasitic resistance effects. IEEE Electron Device Letters. 6(11). 594–596. 12 indexed citations
8.
Norris, George B., D. C. Look, W. Kopp, J. F. Klem, & H. Morkoç̌. (1985). Theoretical and experimental capacitance-voltage behavior of Al0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy. Applied Physics Letters. 47(4). 423–425. 23 indexed citations
9.
Chapin, Peter, et al.. (1985). Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature. Applied Physics Letters. 46(5). 508–510. 152 indexed citations
10.
Das, M.B., W. Kopp, & H. Morkoç̌. (1984). Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S. IEEE Electron Device Letters. 5(11). 446–449. 24 indexed citations
11.
Fischer, R., T. J. Drummond, John F. Klem, et al.. (1984). On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures. IEEE Transactions on Electron Devices. 31(8). 1028–1032. 82 indexed citations
12.
Fischer, R., et al.. (1984). Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters. IEEE Transactions on Electron Devices. 31(10). 1399–1402. 20 indexed citations
13.
Arnold, D., T. Henderson, John F. Klem, et al.. (1984). High performance inverted and large current double interface modulation-doped field-effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface. Applied Physics Letters. 45(8). 902–904. 8 indexed citations
14.
Thorne, R. E., R. Fischer, W. Kopp, et al.. (1983). Analysis of camel gate FET's (CAMFET's). IEEE Transactions on Electron Devices. 30(3). 212–216. 18 indexed citations
15.
Drummond, T. J., W. Kopp, D. Arnold, et al.. (1983). Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET). Electronics Letters. 19(23). 986–988. 13 indexed citations
16.
Morkoç̌, H., et al.. (1982). Submicron gate GaAs/Al0.3Ga0.7AS MESFET's with extremely sharp interfaces (40 Å). IEEE Transactions on Electron Devices. 29(6). 1013–1018. 10 indexed citations
17.
Keever, M., W. Kopp, T. J. Drummond, H. Morkoç̌, & K. Hess. (1982). Current Transport in Modulation-Doped AlxGa1-xAs/GaAs Heterojunction Structures at Moderate Field Strengths. Japanese Journal of Applied Physics. 21(10R). 1489–1489. 25 indexed citations
18.
Drummond, T. J., et al.. (1982). Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructures. Journal of Applied Physics. 53(2). 1238–1240. 52 indexed citations
19.
Drummond, T. J., W. Kopp, H. Morkoç̌, & M. Keever. (1982). Transport in modulation-doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs). Applied Physics Letters. 41(3). 277–279. 38 indexed citations
20.
Drummond, T. J., W. Kopp, & H. Morkoç̌. (1981). Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilities. Electronics Letters. 17(13). 442–444. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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