W. Kopp

2.9k citations

89 papers · 2.2k indexed · h-index 26

Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 60
- Semiconductor materials and interfaces 11
- Quantum and electron transport phenomena 8
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 57
- Advancements in Semiconductor Devices and Circuit Design 38
- Radio Frequency Integrated Circuit Design 20
- Semiconductor Lasers and Optical Devices 6
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 16
Surfaces, Coatings and Films top 10%
Materials Chemistry

Co-authors: H. Morkoç̌R. Fischer T. J. Drummond John F. Klem T. Henderson W. T. Masselink R. E. Thorne Paul D. Coleman
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Applied Physics Letters (18 papers)IEEE Transactions on Electron Devices (16 papers)IEEE Electron Device Letters (15 papers)
Partner nations: United States Canada

In The Last Decade

W. Kopp

88 papers receiving 2.0k citations

Peers

Countries citing papers authored by W. Kopp

Since Specialization

Citations

This map shows the geographic impact of W. Kopp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Kopp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Kopp more than expected).

Fields of papers citing papers by W. Kopp

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Kopp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Kopp. The network helps show where W. Kopp may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W. Kopp, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Kopp Line = papers co-authored together W. Kopp links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	4 GHz high-power high-efficiency pseudomorphic power HEMT Mónica Gil Ochoa,W. Kopp,Ming-Yih Kao,K.H.G. Duh,P.M. Smith,P.C. Chao,Annika Buregård Eklund	2002	7
2	Pseudomorphic high-electron-mobility transistors with low-temperature-grown GaAs buffers Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·T. J. Rogers,K. B. Nichols,W. Kopp,F. W. Smith,A. Bolamba	1996	2
3	Ku-band high efficiency high gain pseudomorphic HEMT Electronics Letters ·P.M. Smith,W. Kopp,P. Ho,P.C. Chao,R.P. Smith,Karen J. Nordheden,J. M. Ballingall	1991	12
4	A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies Journal of Applied Physics ·J. Gering,Heinrich Dritter,Mérine Pretot,Paul D. Coleman,W. Kopp,H. Morkoç̌	1987	74
5	The dependence of 77 K electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures IEEE Transactions on Electron Devices ·W. T. Masselink,T. Henderson,John F. Klem,W. Kopp,H. Morkoç̌	1986	22
6	Optically pumped tunable mode-locked Si-doped GaAs laser Applied Physics Letters ·Tianqi Lin,Basil Martin,M. M. Salour,W. Kopp,H. Morkoç	1986	2
7	Determination of 2-D Electron-gas carrier mobility in short gate-length MODFET's by direct elimination of parasitic resistance effects IEEE Electron Device Letters ·K. Evangelou,M.B. Das,W. Kopp,H. Morkoç̌	1985	12
8	Theoretical and experimental capacitance-voltage behavior of Al0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy Applied Physics Letters ·George B. Norris,D. C. Look,W. Kopp,J. F. Klem,H. Morkoç̌	1985	23
9	Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature Applied Physics Letters ·MA Yun-rui,Peter Chapin,Paul D. Coleman,W. Kopp,R. Fischer,H. Morkoç̌	1985	152
10	Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S IEEE Electron Device Letters ·M.B. Das,W. Kopp,H. Morkoç̌	1984	24
11	On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures IEEE Transactions on Electron Devices ·R. Fischer,T. J. Drummond,John F. Klem,W. Kopp,T. Henderson,桂小纯,H. Morkoç̌	1984	82
12	Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters IEEE Transactions on Electron Devices ·ジェ-ムズ・A. ケリ-,R. Fischer,W. Kopp,T. Henderson,H. Morkoç̌	1984	20
13	High performance inverted and large current double interface modulation-doped field-effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface Applied Physics Letters ·D. Arnold,T. Henderson,John F. Klem,R. Fischer,W. Kopp,A. Ketterson,W. T. Masselink,H. Morkoç̌	1984	8
14	Analysis of camel gate FET's (CAMFET's) IEEE Transactions on Electron Devices ·R. E. Thorne,Sae-rom Han,R. Fischer,W. Kopp,W.G. Lyons,Paul Miller,H. Morkoç̌	1983	18
15	Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET) Electronics Letters ·T. J. Drummond,W. Kopp,D. Arnold,R. Fischer,Sulieman Al Humayed,L. P. Erickson,P. W. Palmberg	1983	13
16	Submicron gate GaAs/Al_0.3Ga_0.7AS MESFET's with extremely sharp interfaces (40 Å) IEEE Transactions on Electron Devices ·H. Morkoç̌,W. Kopp,T. J. Drummond,Sae-rom Han,R. E. Thorne,R. Fischer	1982	10
17	Current Transport in Modulation-Doped Al_xGa_1-xAs/GaAs Heterojunction Structures at Moderate Field Strengths Japanese Journal of Applied Physics ·M. Keever,W. Kopp,T. J. Drummond,H. Morkoç̌,K. Hess	1982	25
18	Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructures Journal of Applied Physics ·T. J. Drummond,W. Kopp,R. Fischer,H. Morkoç̌,R. E. Thorne,Natalie Lung	1982	52
19	Transport in modulation-doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs) Applied Physics Letters ·T. J. Drummond,W. Kopp,H. Morkoç̌,M. Keever	1982	38
20	Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilities Electronics Letters ·T. J. Drummond,W. Kopp,H. Morkoç̌	1981	12

About W. Kopp

W. Kopp is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 89 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (60 papers), Semiconductor materials and devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers), Radio Frequency Integrated Circuit Design (20 papers), GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and interfaces (11 papers), Quantum and electron transport phenomena (8 papers) and Semiconductor Lasers and Optical Devices (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.7k citations), Electrical and Electronic Engineering (1.9k citations) and Condensed Matter Physics (313 citations). W. Kopp has collaborated with scholars based in United States and Canada. Frequent co-authors include H. Morkoç̌, R. Fischer, T. J. Drummond, John F. Klem, T. Henderson, W. T. Masselink, R. E. Thorne, Paul D. Coleman, A. Ketterson and M. Keever. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Electronics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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