S. Glass

464 total citations
24 papers, 377 citations indexed

About

S. Glass is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, S. Glass has authored 24 papers receiving a total of 377 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in S. Glass's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). S. Glass is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). S. Glass collaborates with scholars based in Germany, France and United Kingdom. S. Glass's co-authors include Qing‐Tai Zhao, Hermann Nienhaus, S. Mantl, Dan Buca, Nils von den Driesch, C. Schulte‐Braucks, K. Narimani, Jean‐Michel Hartmann, A. T. Tiedemann and Stephan Wirths and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Glass

23 papers receiving 366 citations

Peers

S. Glass

EEE

AMPO

CMP

A I Baranov Russia

J. Penaud Belgium

S. Barbet France

Zhongyunshen Zhu Sweden

M. M. A. J. Voncken Netherlands

S. J. Lee Singapore

S. Day United Kingdom

P. Jamison United States

Tarek A. Ameen United States

Anja Dobrich Germany

A I Baranov Russia

S. Glass

215 ×0.7

EEE

171 ×1.5

AMPO

67 ×0.8

109 ×1.3

28 ×1.5

CMP

Citations per year, relative to S. Glass S. Glass (= 1×) peers A I Baranov

Countries citing papers authored by S. Glass

Since Specialization

Citations

This map shows the geographic impact of S. Glass's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Glass with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Glass more than expected).

Fields of papers citing papers by S. Glass

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Glass. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Glass. The network helps show where S. Glass may publish in the future.

Co-authorship network of co-authors of S. Glass

This figure shows the co-authorship network connecting the top 25 collaborators of S. Glass. A scholar is included among the top collaborators of S. Glass based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Glass. S. Glass is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Greene, Ciara M., et al.. (2025). Evaluating real-world effects of one-off fake news exposure. Scientific Reports. 15(1). 34035–34035.

Glass, S., et al.. (2019). Impact of Gate–Source Overlap on the Device/Circuit Analog Performance of Line TFETs. IEEE Transactions on Electron Devices. 66(9). 4081–4086. 24 indexed citations

Glass, S., Kimihiko Kato, Jean‐Michel Hartmann, et al.. (2018). A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate. IEEE Journal of the Electron Devices Society. 6. 1070–1076. 13 indexed citations

Narimani, K., et al.. (2018). Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents. Solid-State Electronics. 143. 62–68. 8 indexed citations

Glass, S., Nils von den Driesch, K. Narimani, et al.. (2018). SiGe based line tunneling field-effect transistors. 18(1). 1 indexed citations

Mertens, Konstantin, S. Glass, S. Mantl, et al.. (2018). Realization of vertical Ge nanowires for gate-all-around transistors. 1–4. 2 indexed citations

Glass, S., Gia Vinh Luong, K. Narimani, et al.. (2017). Experimental Investigation of ${C}$ – ${V}$ Characteristics of Si Tunnel FETs. IEEE Electron Device Letters. 38(6). 818–821. 4 indexed citations

Schubert, J., M. Luysberg, W. Zander, et al.. (2017). Ferroelectricity in Lu doped HfO2 layers. Applied Physics Letters. 111(14). 30 indexed citations

Glass, S., Nils von den Driesch, Sebastiano Strangio, et al.. (2017). Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors. Applied Physics Letters. 111(26). 6 indexed citations

10.

Schulte‐Braucks, C., K. Narimani, S. Glass, et al.. (2017). Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks. ACS Applied Materials & Interfaces. 9(10). 9102–9109. 7 indexed citations

11.

Narimani, K., S. Glass, Torsten Rieger, et al.. (2017). Silicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents. 75–78. 2 indexed citations

12.

Schulte‐Braucks, C., S. Glass, Nils von den Driesch, et al.. (2017). Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts. Journal of Applied Physics. 121(20). 22 indexed citations

13.

Glass, S., C. Schulte‐Braucks, U. Breuer, et al.. (2017). Examination of a new SiGe/Si heterostructure TFET concept based on vertical tunneling. 1–3. 4 indexed citations

14.

Glass, S., C. Schulte‐Braucks, K. Narimani, et al.. (2016). Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs. IEEE Transactions on Electron Devices. 63(11). 4173–4178. 17 indexed citations

15.

Schulte‐Braucks, C., Nils von den Driesch, S. Glass, et al.. (2016). Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys. ACS Applied Materials & Interfaces. 8(20). 13133–13139. 19 indexed citations

16.

Glass, S., Felix Reis, M. R. Scholz, et al.. (2016). Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates. The Journal of Physical Chemistry C. 120(19). 10361–10367. 22 indexed citations

17.

Glass, S., Gang Li, A. Fleszar, et al.. (2015). Triangular Spin-Orbit-Coupled Lattice with Strong Coulomb Correlations: Sn Atoms on a SiC(0001) Substrate. Physical Review Letters. 114(24). 247602–247602. 34 indexed citations

18.

Glass, S., C. Schulte‐Braucks, K. Narimani, et al.. (2015). Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS. 22.3.1–22.3.4. 47 indexed citations

19.

Nienhaus, Hermann & S. Glass. (2006). Probing the distribution of hot charge carriers generated in Mg surfaces by oxidation. Surface Science. 600(18). 4285–4289. 11 indexed citations

20.

Glass, S. & Hermann Nienhaus. (2004). Continuous Monitoring of Mg Oxidation by Internal Exoemission. Physical Review Letters. 93(16). 168302–168302. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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