Md. Hasan Raza Ansari

419 citations

33 papers · 312 indexed · h-index 11

Electrical and Electronic Engineering
- Semiconductor materials and devices 22
- Ferroelectric and Negative Capacitance Devices 18
- Advancements in Semiconductor Devices and Circuit Design 17
- Advanced Memory and Neural Computing 16
- Photonic and Optical Devices 2
- Low-power high-performance VLSI design 2
Cellular and Molecular Neuroscience
- Neuroscience and Neural Engineering 4
Materials Chemistry
Polymers and Plastics
Artificial Intelligence
- Neural Networks and Reservoir Computing 2

Co-authors: Seongjae Cho Keun Heo Hocheon Yoo Abhinav Kranti Jyi-Tsong Lin Nazek El‐Atab Kannan Udaya Mohanan Jawar Singh
Cited by: Electrical and Electronic Engineering Cellular and Molecular Neuroscience Materials Chemistry
Journals: IEEE Transactions on Electron Devices (10 papers)Japanese Journal of Applied Physics (2 papers)IEEE Access (2 papers)
Partner nations: Saudi Arabia South Korea India

In The Last Decade

Md. Hasan Raza Ansari

25 papers receiving 298 citations

Peers

Countries citing papers authored by Md. Hasan Raza Ansari

Since Specialization

Citations

This map shows the geographic impact of Md. Hasan Raza Ansari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Md. Hasan Raza Ansari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Md. Hasan Raza Ansari more than expected).

Fields of papers citing papers by Md. Hasan Raza Ansari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Md. Hasan Raza Ansari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Md. Hasan Raza Ansari. The network helps show where Md. Hasan Raza Ansari may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Md. Hasan Raza Ansari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Md. Hasan Raza Ansari Line = papers co-authored together Md. Hasan Raza Ansari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Fully photonic controlled flexible synapse for bionic machine vision and reconfigurable logic applications Materials Science and Engineering R Reports ·Manoj K. Rajbhar,Dayanand Kumar,EC Pat-Mbano,Dhananjay D. Kumbhar,Amit Singh,Miszairi Sitiris,Md. Hasan Raza Ansari,J. Schwede,J Lewinska,Hoonkyung Lee,Nazek El‐Atab	2025	0
2	Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics Solid-State Electronics ·प्रशान्त कुमार सिंह,Naveen Kumar,Ankit Dixit,Md. Hasan Raza Ansari,Navjeet Bagga,Torsten Haferlach,P. N. Kondekar,César Pascual García,Vihar Georgiev	2025	0
3	Ultra Thin Finger-Like Source Region-Based TFET: Temperature Sensor IEEE Sensors Letters ·K.W. Schlax,Ashish Raman,Dharmendra Singh Yadav,Naveen Kumar,Ankit Dixit,Md. Hasan Raza Ansari	2024	5
4	Energy-Efficient Vertically Stacked NSFET-Based CTM for Logic in-Memory Computing Md. Hasan Raza Ansari,Naveen Kumar,Vihar Georgiev,Nazek El‐Atab	2024	1
5	In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies IEEE Transactions on Electron Devices ·Uttam Kumar Das,Md. Hasan Raza Ansari,Muhammad M. Hussain,Nazek El‐Atab	2024	0
6	Implementation of Boolean Logic Functions Through Double Gate FD-SOI MOSFET IEEE Access ·Md. Hasan Raza Ansari,Nazek El‐Atab	2024	0
7	Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer Scientific Reports ·А. И. Шабулдо,Md. Hasan Raza Ansari,Kayaramkodath Chandran Ranjeesh,Safa Gaber,Dayanand Kumar,Areej Merhi,Bilal R. Kaafarani,Mohamed Ben Hassine,Nazek El‐Atab,Dinesh Shetty,Ammar Nayfeh	2023	5
8	Engineered Vertically Stacked NSFET Charge-Trapping Synapse for Neuromorphic Applications ACS Applied Electronic Materials ·Md. Hasan Raza Ansari,Xiang Ma,Nazek El‐Atab	2023	3
9	Comparative Analysis of Vertically Stacked Nanosheet FET based SONOS Memory King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology) ·Md. Hasan Raza Ansari,Nazek El‐Atab	2022	1
10	Performance Improvement of 1T DRAM by Raised Source and Drain Engineering IEEE Transactions on Electron Devices ·Md. Hasan Raza Ansari,Seongjae Cho	2021	26
11	Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application IEEE Journal of the Electron Devices Society ·Md. Hasan Raza Ansari,Seongjae Cho,Jong‐Ho Lee,Byung‐Gook Park	2021	10
12	Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators Japanese Journal of Applied Physics ·塚本勝彦,Jenifer Tabita Ciuciu-Kiss,Md. Hasan Raza Ansari,Garam Kim,Seongjae Cho,Il Hwan Cho	2021	2
13	A More Hardware-Oriented Spiking Neural Network Based on Leading Memory Technology and Its Application With Reinforcement Learning IEEE Transactions on Electron Devices ·Min‐Hwi Kim,Sungmin Hwang,Marissa Leonand,Tae‐Hyeon Kim,Dong Keun Lee,Md. Hasan Raza Ansari,Seongjae Cho,Byung‐Gook Park	2021	14
14	Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications Nanomaterials ·Hocheon Yoo,Keun Heo,Md. Hasan Raza Ansari,Seongjae Cho	2021	77
15	Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System IEEE Access ·TSUYOSHI SOTOZONO,Jun Tae Jang,Shinyoung Park,Md. Hasan Raza Ansari,Jong‐Ho Bae,Sung‐Jin Choi,Dong Myong Kim,Changwook Kim,Seongjae Cho,Dae Hwan Kim	2021	20
16	Core-Shell Dual-Gate Nanowire Charge-Trap Memory for Synaptic Operations for Neuromorphic Applications Nanomaterials ·Md. Hasan Raza Ansari,Kannan Udaya Mohanan,Seongjae Cho	2021	17
17	Double-Gate Junctionless 1T DRAM With Physical Barriers for Retention Improvement IEEE Transactions on Electron Devices ·Md. Hasan Raza Ansari,Xiang Ma,S V Hozhitoev,Seongjae Cho	2020	29
18	More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring Applied Physics A ·Md. Hasan Raza Ansari,Seongjae Cho,Byung‐Gook Park	2020	2
19	Improving charge retention in capacitorless DRAM through material and device innovation Japanese Journal of Applied Physics ·Md. Hasan Raza Ansari,Xiang Ma,Jyi-Tsong Lin,Abhinav Kranti	2019	2
20	High Retention With <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math> </inline-formula>-Oxide-<inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math> </inline-formula> Junctionless Architecture for 1T DRAM IEEE Transactions on Electron Devices ·Md. Hasan Raza Ansari,Xiang Ma,Jyi-Tsong Lin,Abhinav Kranti	2018	11

About Md. Hasan Raza Ansari

Md. Hasan Raza Ansari is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Bioengineering, having authored 33 papers that have together received 312 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Ferroelectric and Negative Capacitance Devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Advanced Memory and Neural Computing (16 papers), Neuroscience and Neural Engineering (4 papers), Photonic and Optical Devices (2 papers), Neural Networks and Reservoir Computing (2 papers) and Low-power high-performance VLSI design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (267 citations), Cellular and Molecular Neuroscience (42 citations) and Materials Chemistry (65 citations). Md. Hasan Raza Ansari has collaborated with scholars based in Saudi Arabia, South Korea and India. Frequent co-authors include Seongjae Cho, Keun Heo, Hocheon Yoo, Abhinav Kranti, Jyi-Tsong Lin, Nazek El‐Atab, Kannan Udaya Mohanan, Jawar Singh, Byung‐Gook Park and Jong‐Ho Lee. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, IEEE Access, Nanomaterials and Materials Science and Engineering R Reports.

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