V. Vyurkov

677 total citations
50 papers, 458 citations indexed

About

V. Vyurkov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, V. Vyurkov has authored 50 papers receiving a total of 458 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 11 papers in Biomedical Engineering. Recurrent topics in V. Vyurkov's work include Quantum and electron transport phenomena (24 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Semiconductor materials and devices (16 papers). V. Vyurkov is often cited by papers focused on Quantum and electron transport phenomena (24 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Semiconductor materials and devices (16 papers). V. Vyurkov collaborates with scholars based in Russia, Japan and Belarus. V. Vyurkov's co-authors include V. Ryzhii, Dmitry Svintsov, Taiichi Otsuji, Akira Satou, Leonid Fedichkin, C. Fiegna, Mauro Zanuccoli, M. Ryzhii, В. Ф. Лукичев and Sergey N. Filippov and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. Vyurkov

47 papers receiving 444 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Vyurkov Russia 12 298 244 149 146 39 50 458
Katsumasa Yoshioka Japan 11 361 1.2× 330 1.4× 144 1.0× 68 0.5× 19 0.5× 23 526
Janine Keller Switzerland 11 326 1.1× 128 0.5× 102 0.7× 48 0.3× 29 0.7× 19 405
Markus Fehrenbacher Germany 5 236 0.8× 127 0.5× 115 0.8× 136 0.9× 15 0.4× 5 342
T. M. Slipchenko Spain 9 181 0.6× 129 0.5× 158 1.1× 54 0.4× 55 1.4× 19 319
Bernat Terrés Germany 12 309 1.0× 355 1.5× 181 1.2× 449 3.1× 7 0.2× 21 656
H. Rasooli Saghai Iran 12 246 0.8× 245 1.0× 80 0.5× 71 0.5× 52 1.3× 45 404
Kashif M. Awan Canada 12 163 0.5× 263 1.1× 110 0.7× 128 0.9× 27 0.7× 35 387
M. Sotoodeh United Kingdom 7 227 0.8× 402 1.6× 73 0.5× 38 0.3× 37 0.9× 18 471
K. Winkler Germany 7 580 1.9× 270 1.1× 96 0.6× 60 0.4× 34 0.9× 14 606
Takeji Ueda Japan 10 160 0.5× 171 0.7× 85 0.6× 102 0.7× 17 0.4× 25 350

Countries citing papers authored by V. Vyurkov

Since Specialization
Citations

This map shows the geographic impact of V. Vyurkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Vyurkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Vyurkov more than expected).

Fields of papers citing papers by V. Vyurkov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Vyurkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Vyurkov. The network helps show where V. Vyurkov may publish in the future.

Co-authorship network of co-authors of V. Vyurkov

This figure shows the co-authorship network connecting the top 25 collaborators of V. Vyurkov. A scholar is included among the top collaborators of V. Vyurkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Vyurkov. V. Vyurkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Svintsov, Dmitry, et al.. (2024). Electron-hole collision limited resistance of gapped graphene. Physical review. B.. 109(8). 1 indexed citations
2.
Пономарев, Д. С., D. V. Lavrukhin, A. E. Yachmenev, et al.. (2019). Sub-terahertz FET detector with self-assembled Sn-nanothreads. Journal of Physics D Applied Physics. 53(7). 75102–75102. 7 indexed citations
3.
Vyurkov, V., et al.. (2018). Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation. Russian Microelectronics. 47(5). 290–298.
4.
Svintsov, Dmitry, et al.. (2016). Single-electron solitons in magnetic field. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10224. 102242K–102242K.
5.
Vyurkov, V., et al.. (2016). Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities. Scientific Reports. 6(1). 24654–24654. 24 indexed citations
6.
Svintsov, Dmitry, V. Vyurkov, V. Ryzhii, & Taiichi Otsuji. (2013). Voltage-controlled surface plasmon-polaritons in double graphene layer structures. Journal of Applied Physics. 113(5). 45 indexed citations
7.
Svintsov, Dmitry, et al.. (2013). Tunnel field-effect transistors with graphene channels. Semiconductors. 47(2). 279–284. 18 indexed citations
8.
Svintsov, Dmitry, V. Vyurkov, V. Ryzhii, & Taiichi Otsuji. (2011). Effect of “Mexican Hat” on Graphene Bilayer Field-Effect Transistor Characteristics. Japanese Journal of Applied Physics. 50(7R). 70112–70112. 1 indexed citations
9.
Vyurkov, V., et al.. (2011). Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels. Advanced materials research. 276. 51–57. 1 indexed citations
10.
Vyurkov, V., Sergey N. Filippov, & L. Y. Gorelik. (2010). Quantum computing based on space states without charge transfer. Physics Letters A. 374(33). 3285–3291. 3 indexed citations
11.
Vyurkov, V., et al.. (2010). Efficient implementation of the Fourier modal method (RCWA) for the optical simulation of optoelectronics devices. Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna). 1–4. 2 indexed citations
12.
Pozdnyakov, D. V., et al.. (2010). Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation. Russian Microelectronics. 39(6). 411–417. 8 indexed citations
13.
Vyurkov, V., et al.. (2009). A semianalytical model of a thin-channel field-effect transistor. Russian Microelectronics. 38(6). 393–405. 1 indexed citations
14.
Vyurkov, V., et al.. (2008). <title>All-quantum simulation of an ultra-small SOI MOSFET</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 70251K–70251K. 7 indexed citations
15.
Vyurkov, V., et al.. (2006). <title>Surface scattering in SOI field-effect transistor</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 62600O–62600O. 4 indexed citations
16.
Satou, Akira, V. Vyurkov, & I. Khmyrova. (2004). Plasma Oscillations in Terahertz Photomixing High-Electron-Mobility Transistor Structure on p+-Substrate. Japanese Journal of Applied Physics. 43(4B). L566–L566. 3 indexed citations
17.
Vyurkov, V., et al.. (2003). Absolute negative conductivity in two-dimensional electron systems associated with acoustic scattering stimulated by microwave radiation. Physical review. B, Condensed matter. 68(16). 75 indexed citations
18.
Vyurkov, V., et al.. (2000). Tunnelling through Oscillating Barrier. physica status solidi (b). 221(1). 447–452. 10 indexed citations
19.
Vyurkov, V., et al.. (2000). Spontaneous spin polarization in a quantum wire. Nanotechnology. 11(4). 336–339. 4 indexed citations
20.
Fedichkin, Leonid & V. Vyurkov. (1994). Quantum ballistic channel as an ultrahigh frequency generator. Applied Physics Letters. 64(19). 2535–2536. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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